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公开(公告)号：KR1020130130169A
公开(公告)日：2013-12-02
申请号：KR1020120020631
申请日：2012-02-28
Applicant: 성균관대학교산학협력단
Abstract: The present invention relates to nitride-based phosphor which is synthesized at low temperature in a relative sense by making chloride-based phosphor react with Si3N4 or Si2ON2, or oxynitride-based phosphor or oxynitride-based phosphor powder synthesized through a carbothermal reduction and nitridation (CRN) method, and a manufacturing method thereof.
Abstract translation: 本发明涉及通过使氯化物系荧光体与Si3N4或Si2ON2反应的低温合成的氮化物系荧光体或通过碳热还原和氮化合成的氧氮化物系荧光粉或氧氮化物系荧光体粉末 CRN）方法及其制造方法。
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公开(公告)号：KR101234316B1
公开(公告)日：2013-02-18
申请号：KR1020100063597
申请日：2010-07-01
Applicant: 성균관대학교산학협력단
Abstract: 본원은, 브라운관, 발광다이오드 (LED), 플라즈마 디스플레이 패널 (PDP), 냉음극형광램프(CCFL), 전계방출디스플레이(FED)와 같은 디스플레이용 및 램프용 발광기구에 사용 할 수 있는 초미세입자의 알칼리토 금속을 포함하는 AlO계 형광체 분말의 제조방법 관한 것으로서, 상기 제조 방법은 알칼리토 금속 염 및 알루미늄 염을 포함하는 수용액을 고분자 물질에 함침시켜 전구체를 수득하고 상기 전구체를 2단계로 소성함으로써 나노 크기 내지 서브 마이크로 크기의 AlO계(알루미네이트계) 산화물 형광체 분말을 수득하는 것을 포함한다.
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公开(公告)号：KR1020120130938A
公开(公告)日：2012-12-04
申请号：KR1020110049016
申请日：2011-05-24
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: H01L33/36
CPC classification number: H01L33/40 , H01L33/38 , H01L33/483
Abstract: PURPOSE: A light emitting device including a graphene pattern layer and a manufacturing method thereof are provided to improve the external quantum efficiency and to prevent total internal reflection of the light emitting device by using graphene as an electrode. CONSTITUTION: A first semiconductor layer(30) is formed on a substrate. An active layer is formed on the first semiconductor layer. A second semiconductor layer(50) is arranged on the active layer. A graphene pattern layer(60) is arranged on the second semiconductor layer. A polymer pattern layer is formed on the graphene pattern layer.
Abstract translation: 目的：提供一种包括石墨烯图案层的发光器件及其制造方法，以提高外部量子效率并通过使用石墨烯作为电极来防止发光器件的全内反射。 构成：在基板上形成第一半导体层（30）。 在第一半导体层上形成有源层。 第二半导体层（50）布置在有源层上。 石墨烯图案层（60）布置在第二半导体层上。 在石墨烯图案层上形成聚合物图案层。
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公开(公告)号：KR1020120098546A
公开(公告)日：2012-09-05
申请号：KR1020120020630
申请日：2012-02-28
Applicant: 성균관대학교산학협력단
Abstract: PURPOSE: A manufacturing method of chlorine-based phosphor or oxide-based phosphor is provided to increase light-emitting intensity of phosphor, in which rare earth metal is added, through strong oxidation or reduction using chloride, and to able to manufacture a more stable phosphor. CONSTITUTION: A manufacturing method of chlorine-based phosphor or oxide-based phosphor comprises a step of treating chloride-containing silicate phosphor to alkaline material. The alkaline material comprises a compound containing -OH, -NH2, or NH3. The alkaline compound comprising -OH comprises LiOH, NaOH, KOH, RbOH, CsOH, NH4OH, H2O2, or combinations thereof. A treatment to the alkaline material is conducted at (-100) - 1500 °C. The chloride-based phosphor additionally comprises rare earth metal.
Abstract translation: 目的：提供氯系荧光体或氧化物系荧光体的制造方法，通过使用氯化物的强氧化或还原来提高添加稀土金属的荧光体的发光强度，能够制造更稳定 磷。 构成：氯系荧光体或氧化物系荧光体的制造方法包括将含氯化物的硅酸盐荧光体处理成碱性物质的工序。 碱性材料包含含有-OH，-NH 2或NH 3的化合物。 包含-OH的碱性化合物包括LiOH，NaOH，KOH，RbOH，CsOH，NH 4 OH，H 2 O 2或其组合。 在（-100）-100℃下对碱性物质进行处理。 基于氯化物的荧光体还包括稀土金属。
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公开(公告)号：KR1020120098545A
公开(公告)日：2012-09-05
申请号：KR1020120020629
申请日：2012-02-28
Applicant: 성균관대학교산학협력단
Abstract: PURPOSE: A manufacturing method of silicate chloride-based phosphor is provided to provide a spherical silicate chloride-based phosphor having uniform particle size, excellent luminance efficiency, excellent productivity, and excellent profitability. CONSTITUTION: A manufacturing method of silicate chloride-based phosphor comprises: a step of obtaining metal salt-SiO2 sol mixed solution by mixing metal salt mixed solution, which comprises metal sat for synthesizing silicate chloride-based phosphor with rare earth metal, together with sol to liquid phase; a step of impregnating the metal salt-SiO2 sol mixed solution into a polymer material, drying the polymer material, and conducting low-temperature calcinations, preoxidation firing, and post reduction firing to obtain silicate chloride-based phosphor. [Reference numerals] (AA) Metal solution, aqueous silicon compound(WSS); (BB) Impregnation(cellulose); (CC) Mixing, stirring and drying under ultra sonic waves; (DD) First sintering(150-400°C, air); (EE) Second sintering(500-1000°C, air); (FF) 700-1400°C, sintering under reduction; (GG) Phosphor
Abstract translation: 目的：提供一种硅酸氯化物系荧光体的制造方法，提供粒径均匀，发光效率好，生产率优异，利润率优异的球形硅酸氯化物系荧光体。 构成：一种硅酸氯化物系荧光体的制造方法，其特征在于，通过混合金属盐混合溶液得到金属盐-SiO 2溶胶混合溶液的步骤，所述金属盐混合溶液包括用于合成硅酸氯化物基荧光体与稀土金属的金属sat，以及溶胶 到液相; 将金属盐-SiO 2溶胶混合溶液浸渍到聚合物材料中，干燥聚合物材料，进行低温煅烧，预氧化烧结和后还原烧成，得到硅酸氯化物系荧光体。 （标号）（AA）金属溶液，硅酸水溶液（WSS）; （BB）浸渍（纤维素）; （CC）在超声波下混合搅拌干燥; （DD）第一烧结（150-400℃，空气）; （EE）第二烧结（500-1000℃，空气）; （FF）700-1400℃，还原烧结; （GG）荧光体
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Patent Agency Ranking
公开(公告)号：KR1020120096221A
公开(公告)日：2012-08-30
申请号：KR1020110015495
申请日：2011-02-22
Applicant: 성균관대학교산학협력단
CPC classification number: C09K11/59 , C09K11/0883 , H01J17/49 , Y02B20/181
Abstract: PURPOSE: A manufacturing method of phosphor powder is provided to provide oxynitride-based or nitride-based phosphor powder emitting blue to yellow excitation light in a range of blue ray to ultra violet ray, and having excellent luminous efficiency and temperature performance even in high temperatures. CONSTITUTION: A manufacturing method of phosphor powder comprises a step of obtaining precursor by impregnating aqueous solution comprising divalent metal salt for forming Si-based oxynitride group through hydrothermal synthesis at 80-200 °C; and a step of primary sintering the precursor at 300-800 °C under oxygen-containing atmosphere; a step of secondary sintering under ammonia- or nitrogen-containing atmosphere at 900-1400 °C.
Abstract translation: 目的：提供荧光体粉末的制造方法，以提供在蓝光至紫外线范围内发射蓝色至黄色激发光的氮氧化物基或氮化物系荧光体粉末，即使在高温下也具有优异的发光效率和温度性能 。 构成：荧光体粉末的制造方法包括通过在80〜200℃下通过水热合成浸渍含有二价金属盐的水溶液以形成Si系氮氧化物基团而获得前体的工序; 以及在含氧气氛下在300-800℃下初始烧结前体的步骤; 在900-1400℃的氨水或含氮气氛下二次烧结的步骤。
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公开(公告)号：KR1020110091427A
公开(公告)日：2011-08-11
申请号：KR1020100121904
申请日：2010-12-02
Applicant: 성균관대학교산학협력단
IPC: H01L31/04 , H01L31/06 , H01L31/0216
CPC classification number: Y02E10/50 , H01L31/04 , H01L31/0216 , H01L31/06
Abstract: PURPOSE: A manufacturing method of a silicon nitride antireflection layer and a silicon solar cell using the same are provided to make simultaneously the silicon nitride antireflection layer with a texturing effect and a p-n junction from a single process, thereby simplifying manufacturing processes. CONSTITUTION: A dopant including silicon oxide layer(200) is formed using a sol-gel method by applying an aqueous application solution on a semiconductor substrate. The aqueous application solution includes a silicon oxide(SiO2) precursor and a dopant precursor. An emitter layer(300) by a p-n junction formation is formed with diffusion of a dopant by heat treating of the dopant including silicon oxide layer in a nitriding atmosphere and simultaneously a silicon nitride layer(400) is formed by a nitride in a silicon oxide layer on the semiconductor substrate. The silicon nitride layer acts as an antireflection layer and also provides a surface texturing effect at the same time.
Abstract translation: 目的：提供一种氮化硅抗反射层的制造方法和使用该氮化硅抗反射层的硅太阳能电池，以同时具有来自单一工艺的纹理效应和p-n结的氮化硅抗反射层，从而简化了制造工艺。 构成：通过在半导体衬底上涂布水性涂布液，使用溶胶 - 凝胶法形成包含氧化硅层（200）的掺杂剂。 该水溶液包括氧化硅（SiO 2）前体和掺杂剂前体。 通过pn结形成的发射极层（300）通过在氮化气氛中热处理掺杂剂包括氧化硅层的掺杂剂而形成，同时通过氧化硅中的氮化物形成氮化硅层（400） 层。 氮化硅层用作抗反射层，并且同时提供表面纹理效应。
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公开(公告)号：KR1020100089338A
公开(公告)日：2010-08-12
申请号：KR1020090008540
申请日：2009-02-03
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: H01L33/10
Abstract: PURPOSE: A light emitting device comprising a micro-rod and manufacturing method of the same are provided to increase emission area of the emitting device and to improve luminous efficiency by controlling a lattice constant difference and a deformity of thermal expansion coefficient difference. CONSTITUTION: A reflecting layer(11) is formed on a conductive substrate(10). A micro-rod is projected from a hole inside of the reflecting layer. The micro-load comprises a reflection conductive layer(13a), an n-GaN layer(13b), an active layer(13c), and a p-GaN layer(13d). A filling layer(14) is formed in the reflecting layer top and the micro-load side. A transparent electrode(15) is formed on the micro-load and the filling layer.
Abstract translation: 目的：提供包括微型棒及其制造方法的发光器件，以增加发光器件的发射面积，并通过控制晶格常数差和热膨胀系数差的变形来提高发光效率。 构成：在导电性基板（10）上形成有反射层（11）。 从反射层内的孔突出微杆。 微负载包括反射导电层（13a），n-GaN层（13b），有源层（13c）和p-GaN层（13d）。 在反射层顶部和微负载侧形成填充层（14）。 在微负载和填充层上形成透明电极（15）。
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