公开(公告)号：JP2586826B2

公开(公告)日：1997-03-05

申请号：JP16277494

申请日：1994-06-21

Applicant: SONY CORP

Inventor： IKEDA MASAO

IPC: H01L21/205 ,  H01S5/00 ,  H01S3/18

公开(公告)号：JP2508625B2

公开(公告)日：1996-06-19

申请号：JP19171885

申请日：1985-08-30

Applicant: SONY CORP

Inventor： ISHIKAWA HIDETO ,  ISHIBASHI AKIRA ,  MORI YOSHIFUMI ,  IKEDA MASAO

IPC: H01S5/00 ,  H01S3/18

公开(公告)号：JPH08139416A

公开(公告)日：1996-05-31

申请号：JP27873894

申请日：1994-11-14

Applicant: SONY CORP

Inventor： TAMAMURA KOJI ,  TSUKAMOTO HIRONORI ,  NAGAI MASAHARU ,  IKEDA MASAO

IPC: C30B25/16 ,  H01L21/66 ,  H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  H01S5/00 ,  H01S3/18 ,  H01L33/00

Abstract: PURPOSE: To provide a method for obtaining the crytical film thickness of an active layer or the like of an optical semiconductor device composed of a II-VI compound semiconductor layer, and form the optical semiconductor device under the optimum condition. CONSTITUTION: The relation between the film thickness of a compound semiconductor layer and the PL intensity is obtained by observing photoluminescence(PL) of the compound semiconductor layer which PL corresponds with the film thickness. The film thickness wherein the PL intensity forms a peak IP is obtained as the critical film thickness hPL. A relational equation for approximating the critical film thickness by setting the composition ratio of cadmium(Cd) in the compound semiconductor layer as a function is obtained. By using the relational equation, the critical film thickness of the compound semiconductor layer having a desired Cd composition ratio is obtained. The film thickness of the active layer is designed to be less than or equal to the critical film thickness obtained in the above manner. The active layer is formed to have the film thickness designed when a II-VI compound semiconductor layer containing an active layer is deposited on a substrate, and an optical semiconductor device is formed.

公开(公告)号：JPH07147459A

公开(公告)日：1995-06-06

申请号：JP16277494

申请日：1994-06-21

Applicant: SONY CORP

Inventor： IKEDA MASAO

IPC: H01L21/205 ,  H01S5/00 ,  H01S3/18

Abstract: PURPOSE:To make an AlGaInP semiconductor laser having excellent crystallizability by the epitaxial growth of superior quality. CONSTITUTION:In the title AlGaInP semiconductor laser at least having the first clad layer 23, a flatly formed active layer 24 and the second clad layer 25, irregularity is provided at least on the above-mentioned first clad layer 23, active layer 24 and the second clad layer 25, and an AlGaAs or GaAs semiconductor layer 37, having at least either of an optical confinement function and a current constricting function, is formed on both sides of the irregular part.

公开(公告)号：JPH07106251A

公开(公告)日：1995-04-21

申请号：JP27499793

申请日：1993-10-06

Applicant: SONY CORP

Inventor： IKEDA MASAO

IPC: C30B23/08 ,  H01L21/203

Abstract: PURPOSE:To provide molecular beam source cells, which are respectively always capable of measuring the intensity of a molecular beam, which is generated in each molecular beam source cell during the formation of a thin film, in every molecular beam source cell, and a molecular-beam epitaxial growth device. CONSTITUTION:An intensity-of-molecular-beam measuring device 22 is attached to each molecular beam source cell 20. molecular-beam epitaxial growth device is provided with the cells 20, which are respectively mounted with each device 22. It is desirable that the growth device is further provided with a control mechanism for controlling the intensities of molecular beams, which are emitted from the cells 20, on the basis of the intensities of the molecular beams measured by the devices 22. Each device 22 can be constituted of an ion gauge type measurer or a resistance wire.

公开(公告)号：JPH077218A

公开(公告)日：1995-01-10

申请号：JP14391093

申请日：1993-06-15

Applicant: SONY CORP

Inventor： IKEDA MASAO ,  OHATA TOYOJI

IPC: H01S5/00 ,  H01S5/327 ,  H01S3/18

Abstract: PURPOSE:To make it possible to achieve continuous room-temperature operation and long-life operation by decreasing the operating voltage of a semiconductor laser comprising II-VI group compound, and obtaining the semiconductor laser in green color or blue color having a low operating voltage. CONSTITUTION:A buffer layer 2 made of p-type ZnSe or p-type ZnSSe is provided on a substrate 1 of p-type GaAs through a buffer layer 11 comprising at least one layer of AlGaInP-based material. A laser structure made of II-VI group compound is constituted thereon.

公开(公告)号：JPH0632334B2

公开(公告)日：1994-04-27

申请号：JP19731884

申请日：1984-09-20

Applicant: SONY CORP

Inventor： IKEDA MASAO ,  MORI YOSHIFUMI

IPC: H01L21/203 ,  H01S5/00 ,  H01S3/18

公开(公告)号：JPS6226885A

公开(公告)日：1987-02-04

申请号：JP16632585

申请日：1985-07-26

Applicant: SONY CORP

Inventor： IKEDA MASAO

IPC: H01S5/00 ,  H01S5/024 ,  H01S5/32 ,  H01S5/323

Abstract: PURPOSE:To make a continuous oscillation at room temperature possible on account of effective heat dissipation, by forming a thin AlGaInP layer of low thermal conductivity in a clad layer between an active layer and a heat sink side, and making the AlGaAs layer of high thermal conductivity mainly perform a confinement function of light. CONSTITUTION:A clad layer 2, an active layer 3, and a layer 4a, a part of a second clad layer 4, are grown on a substrate 1 by an epitaxy. An AlGaAs layer 4b is grown on a layer 4a by epitaxy, on which a cap layer 5 is grown as well by epitaxy. A AlGaInP layer 4b of a second clad layer 4 is made thin as far as the confinement of carrier is possible, and the band gap wider than that of the active layer 3 is adopted. On the other hand, an AlGaAs layer 4a of high thermal conductivity has the thickness capable of confining the light, and its reflectivity is made smaller than that of the active layer 3. Thus the heat from the active layer is so effectively dissipated that the continuous oscillation at room temperature is realized.

公开(公告)号：JP2011187579A

公开(公告)日：2011-09-22

申请号：JP2010049749

申请日：2010-03-05

Applicant: Sony Corp ,  Tohoku Univ ,  ソニー株式会社 ,  国立大学法人東北大学

Inventor： OKI TOMOYUKI ,  KURAMOTO MASARU ,  IKEDA MASAO ,  MIYAJIMA TAKAO ,  WATANABE HIDEKI ,  YOKOYAMA HIROYUKI

IPC: H01S5/065

Abstract: PROBLEM TO BE SOLVED: To provide a driving method of a mode-locked semiconductor laser element, having a structure for reducing the influence due to piezo polarization and spontaneous polarization. SOLUTION: The mode-locked semiconductor laser element includes a laminated structure, obtained by sequentially laminating a first compound semiconductor layer 30 formed of a GaN-based compound semiconductor, a third compound semiconductor layer 40 having a light emitting region 41 and a second compound semiconductor 50; a second electrode 62; and a first electrode 61. The laminated structure is formed on a compound semiconductor substrate 21 having polarity; the third compound semiconductor layer includes a quantum well structure having a well layer and a barrier layer; the thickness of the well layer is 1 to 10 nm and impurity doping concentration of the barrier layer is 2×10 18 through 1×10 20 cm -3 ; and in the driving method of the mode-locked semiconductor laser element, current is made to flow to the first electrode 61 from the second electrode 62 via the laminated structure, and thus an optical pulse can be generated in the light emitting region 41. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 解决的问题：提供一种具有减少由于压电极化和自发极化引起的影响的结构的锁模半导体激光元件的驱动方法。 解锁方案：锁模半导体激光元件包括层叠结构，其通过依次层叠由GaN基化合物半导体形成的第一化合物半导体层30，具有发光区域41的第三化合物半导体层40和 第二化合物半导体50; 第二电极62; 和第一电极61.层叠结构形成在具有极性的化合物半导体基板21上; 第三化合物半导体层包括具有阱层和阻挡层的量子阱结构; 阱层的厚度为1〜10nm，阻挡层的杂质掺杂浓度为2×10 18 20×SP> / SP>; 并且在锁模半导体激光元件的驱动方法中，电流通过层叠结构从第二电极62流向第一电极61，因此可以在发光区域41中产生光脉冲。 P>版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010153430A

公开(公告)日：2010-07-08

申请号：JP2008327173

申请日：2008-12-24

Applicant: Sony Corp ,  Tohoku Univ ,  ソニー株式会社 ,  国立大学法人東北大学

Inventor： OTA MAKOTO ,  YOKOYAMA HIROYUKI ,  KURAMOTO MASARU ,  IKEDA MASAO

IPC: H01S5/22 ,  G11B7/125 ,  G11B7/22 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser which can perform sufficiently powerful self-pulsation operation without making the shape of a far-field image worse and stably obtain low-noise laser light, and is easily manufactured. SOLUTION: The self-pulsation semiconductor laser having a ridge stripe 11 in a clad layer has high-resistance regions 14 formed by ion implantation etc., at parts nearby both side surfaces of a center part of a ridge stripe 11 in a resonator-length direction. The high-resistance regions 14 operate as current restriction regions and the ridge stripe 11 at the parts where the high-resistance regions 14 are formed includes a part between the high-resistance regions 14 as a current injection region. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种可以执行足够强大的自脉动操作而不使远场图像的形状更差并且稳定地获得低噪声激光的半导体激光器，并且容易制造。 解决方案：在包层中具有脊条11的自脉动半导体激光器具有通过离子注入等形成的高电阻区域14，在脊条11的中心部分的两侧表面附近的部分 谐振器长度方向。 高电阻区域14作为电流限制区域工作，并且形成高电阻区域14的部分处的脊条11包括作为电流注入区域的高电阻区域14之间的部分。 版权所有（C）2010，JPO＆INPIT