公开(公告)号：JP2000021732A

公开(公告)日：2000-01-21

申请号：JP18762498

申请日：1998-07-02

Applicant: TOSHIBA CORP

Inventor： SATO KAZUYA ,  TANAKA SATOSHI ,  FUJISAWA TADAHITO ,  INOUE SOICHI

IPC: G03F7/20 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To test an aligner promptly in a simple way, without disassembling the aligner. SOLUTION: In this testing method, an aligner consists of a light source, a lighting optical system 1 for conducting the light from the light source to a photo mask, and a projection optical system 3 for transferring a reduced image onto a wafer 5. The testing method is user for testing the configuration of light source of the aligner, a configuration of a pupil 4 in the projection optical system 3, and a degree of concentricity between the light source configuration and the pupil 4. The light from the light source is irradiated the reticle 2 with lattice pattern, in which light transmitting and shielding parts are repeated in a finite cycle. Then, an outer edge of the pupil 4 in the projection optical system 3 is irradiated with light with first or higher orders of diffraction, and at the same time, a pattern image of the reticle 2 in a defocused state is exposed on the wafer 5.

公开(公告)号：JPH09306805A

公开(公告)日：1997-11-28

申请号：JP11791596

申请日：1996-05-13

Applicant: TOSHIBA CORP

Inventor： TOKAWA IWAO ,  HARA SHIGEHIRO ,  OGAWA YOJI ,  INOUE SOICHI

IPC: H01L21/027

Abstract: PROBLEM TO BE SOLVED: To form a symmetrical pattern in the accuracy higher than the conventional accuracy by a method wherein the symmetrical pattern is symmetrically divided based on exposure pattern data, and a variable forming beam, which corresponds to the pattern of each divided part, is formed. SOLUTION: Resist is applied to the light-shielding film formed on a quartz substrate, they are baked and set on a variable forming electron beam (VSB) aligner. Then, the stripe-like region, determined by the maximum deflection width of the beam, is successively exposed by continuously moving the stage where blanks are mounted, and the desired region is exposed. Pertaining to the pattern which is spread over a cell array region among exposure pattern data, the pattern is symmetrically divided, a variably shaped beam, corresponding to the pattern of divided parts 1 to 6, is formed and an exposing operation is conducted using said variably-shaped beam. An exposing operation is conducted by providing symmetrical shot division.

公开(公告)号：JPH09293667A

公开(公告)日：1997-11-11

申请号：JP10743996

申请日：1996-04-26

Applicant: TOSHIBA CORP

Inventor： INOUE SOICHI ,  TOKAWA IWAO ,  OGAWA YOJI ,  HARA SHIGEHIRO ,  YAMAMOTO KAZUKO

IPC: H01L21/027 ,  G03F7/20

Abstract: PROBLEM TO BE SOLVED: To utilize positional information on a region, which requires high dimensional accuracy, to achieve the high drawing accuracy of the region as a result. SOLUTION: This pattern forming method is a method wherein a beam obtainable by molding an electron beam into an arbitrary form is positioned, exposure of shots, which irradiate the beam for a prescribed time, is repeated and these shots are linked together, whereby an exposure region of a desired patterned form is formed on a photosensitive material film on a substrate. In this case, the linking-together of a plurality of the shots 13 constituting the exposure region is conducted at a position to correspond to an element isolation region of a semiconductor device and these shots are linked together to form gate patterns 16.

公开(公告)号：JPH09244223A

公开(公告)日：1997-09-19

申请号：JP5796296

申请日：1996-03-14

Applicant: TOSHIBA CORP

Inventor： INOUE SOICHI ,  TANAKA SATOSHI

IPC: G03F1/36 ,  G03F1/68 ,  G03F7/20 ,  H01J37/317 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To make it possible to display the number and density of contour lines in the same way in spite of a difference in its relative intensity value if the exposure intensity distribution is the same and to quantitatively recognize the change in the shapes of the resist patterns with a fluctuation in the exposure at a certain ratio. SOLUTION: This edition device has a position input edition section 5 of mask patterns for LSIs, an exposure intensity distribution calculating section 52 for researching the intensity distribution of the light to be cast through the mask patterns to the resist surface on a sample and a graphic display section 53 which simultaneously displays the mask patterns and the exposure intensity distribution. A contour line display calculating section 57 is installed between the exposure intensity distribution calculating section 52 and the graphic display section 53. The exposure intensity distribution is displayed by the contour lines given by Ie/(1+an/100) [a is a specified ratio (%) and n is an integer] with respect to arbitrary set intensity Ie.

公开(公告)号：JPH0980735A

公开(公告)日：1997-03-28

申请号：JP23875195

申请日：1995-09-18

Applicant: TOSHIBA CORP

Inventor： ITO SHINICHI ,  KAWANO KENJI ,  INOUE SOICHI ,  TANAKA SATOSHI

IPC: G03F1/28 ,  G03F1/30 ,  G03F1/68 ,  G03F1/80 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To overcome the difference in the image intensity arising between a Lebenson phase shift region and non-Lebenson phase shift region by adjusting the recessed amt. of the non-Lebenson phase shift region. SOLUTION: This mask for exposure has the phase shift openings forming by making a recessed part in a part of a light-transmissible substrate 1 among the opening patterns of a light shieldable film 2 formed on this substrate 1. The phase shift openings are the openings of the min. opening size L having the periodicity constituted by alternately arranging the first opening pattern groups and second opening pattern groups where the optical path length differences to the exposing light transmitted through the non-recessed regions of the substrate 1 attain λ/2 and λ in one direction. The image intensity for working both patterns at the desired sizes is made match with each other by making the recessed part on the substrate 1 when the image intensity of the non-phase shift parts is higher than that of the phase shift parts and by imparting the optical path differences of λ and λ/2 to the light transmitted through the non-recessed parts of the substrate 1 if the image intensity of the phase shift parts in higher than that of the non-phase shift parts.

公开(公告)号：JPH08255737A

公开(公告)日：1996-10-01

申请号：JP5704495

申请日：1995-03-16

Applicant: TOSHIBA CORP

Inventor： SANHONGI SHOJI ,  INOUE SOICHI

IPC: G03F7/26 ,  H01L21/027

Abstract: PURPOSE: To make resolution and focus depth of an end pattern of an isolated pattern and a cycle pattern approximately the same as those of an inner pattern of a cycle pattern by applying a second resist after performing exposure of a cycle pattern for a first resist and performing exposure and development of an isolated pattern which is larger than that of a cycle pattern. CONSTITUTION: A first resist 12 is applied on an exposure board 11. It is exposed by excimer laser beam 14 by using a phase shift mask 13 provided with a cycle pattern. A second resist 15 is applied on the first resist 12 and a member corresponding to an unnecessary pattern 12c of at least a pattern exposed by the mask 13 is exposed by an (i) line 17 by using a second mask 16 which is a light screening part. When development is carried out, unexposed parts 12b and 15b prevent the unnecessary part 12c from dissolving in developer and exposure parts 15a and 12a excepting the unnecessary pattern 12c are removed. A hole or a groove 18 having approximately the same resolution and focus depth as a cycle pattern can be formed in this way.

公开(公告)号：JPH06267822A

公开(公告)日：1994-09-22

申请号：JP5670593

申请日：1993-03-17

Applicant: TOSHIBA CORP

Inventor： TANAKA SATOSHI ,  INOUE SOICHI ,  FUJISAWA TADAHITO

IPC: G03F1/00 ,  G03F1/68 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30 ,  G03F1/08

Abstract: PURPOSE:To obtain a fine contact hole pattern group, by forming patterns periodically in two directions on the mask surface, forming phase difference in the lights passing neighboring patterns, and making the emission surface light intensity of a light source large in the region distant from the optical axis. CONSTITUTION:The reticle 5 has 5 an optical shielding part 9 which does not transmit exposure light, and an aperture part 10 which transmits the exposure light, on a transparent substrate. A phase shifter part 11 formed by digging the substrate in the aperture part is arranged. The phase shifter part 11 is so formed that the phase difference of light passing the part 11 becomes nearly 180 deg. with respect to the aperture part 10. A light source filter 8 consists of an optical shielding part 12 and a light transmitting part 13, and the optical shielding part 12 has a form of four times symmetry regarding an optical axis 22. When the reticle 5 is irradiated with the light from a point light source 14, light flux interference is caused on a wafer 7 by four diffraction light beams, and light intensity distribution is similar to the distribution obtained by two times exposure of the phase shift mask. Hence it is unnecessary that the exposure is again performed by changing masks, and high resolution exposure is possible.

公开(公告)号：JPH06163355A

公开(公告)日：1994-06-10

申请号：JP31892492

申请日：1992-11-27

Applicant: TOSHIBA CORP

Inventor： INOUE SOICHI ,  MORI ICHIRO ,  ONISHI KIYONOBU

IPC: G03F7/20 ,  G03F7/38 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To provide a fine pattern formation method which improves resolution and enables easy and high resolution pattern transfer without causing complication of mask manufacturing process and shifter arrangement algorithm when forming a desired resist pattern by using a Levinson type phase shift mask. CONSTITUTION:In a fine pattern formation method wherein a pattern formed in a mask 10 is transferred to a wafer 16 through a projection optical system 15, the mask 10 is such that a mask part corresponding to a desist pattern is an opening part 13, the other mask part is a light screening part 12, and phase shifters 14 for sifting the phase of illumination light by 180 deg. are arranged in every other opening parts 13. After transmitted image of the mask 10 is exposed to a positive resist 17 applied to the wafer 16, heating treatment is performed in vapor of basic substance. After exposure is performed for the resist 17, development is carried out.

公开(公告)号：JPH0445552A

公开(公告)日：1992-02-14

申请号：JP11772790

申请日：1990-05-09

Applicant: TOSHIBA CORP

Inventor： INOUE SOICHI

IPC: G01B11/00 ,  H01L21/66

Abstract: PURPOSE:To analyze an element which forms a fine region having a high in- plane resolving power by providing an X ray image detection means which has either a positional resolving power or an energy resolving power or both. CONSTITUTION:Thermoelectrons emitted from an electron gun 101 are focussed by a focussing lens 102 where the electrons are deflected by a polariscope 103 and reduced by an objective lens, and radiated uniformly to a sample 105 mounted on an X-Y stage 109. The characteristic X rays distribution of the sample 105 generated this electron radiation region is magnified and focused on a two dimensional X ray detector 107 by an optical X ray magnifying and focusing device 106. The application of the device 106 can eliminate the effect of resolution deterioration induced by the spread incident electrons in the sample 105, which makes it possible to obtain a surface analytical device that has an in-plane resolving power.

公开(公告)号：JPH02239556A

公开(公告)日：1990-09-21

申请号：JP5995189

申请日：1989-03-13

Applicant: TOSHIBA CORP

Inventor： INOUE SOICHI

IPC: H05G1/52 ,  H01J35/08

Abstract: PURPOSE:To form a fine characteristic X-ray generating source by calculating the characteristic X-ray generating region on the basis of accelerating voltage for an electron beam to be used, the excitation energy for target substance, atomic weight, density, and atomic number. CONSTITUTION:A target is formed from a substrate 203 consisting of a silicon base board, in which carbon as target substance 202 is embedded in a trench T of 0.2mum deep and 0.2mum in dia. If in this constitution the accelerating voltage for an accelerative electron beam for excitation is selected to an intermediate value 1.5KeV between the excitation energy 1740eV of silicon and the excitation energy 277eV of carbon, the substrate 203 will not be excited, while the target material 202 solely excited, and the characteristic X-ray 205 of wavelength 44.7Angstrom is emitted from only the columnar region T of 0.2mum deep and 0.2mum in dia. Thus the size of the X-ray generating source is decided by the size of target substance, which enables acquisition of a very fine X-ray beam.