Abstract:
Determination of a date range for cached date-driven values is provided to process defects for filtering/caching the recurring date-driven data and determine the date range of the cashed date-driven values. A date range is defined and three cached instances are searched from date-driven data for each recurrence(220). Only the recurrences included in the date range are selected by three cached instances. The selected recurrences are added to a subset of the date-driven values(250). The remaining recurrences are excluded from the subset of the date-driven values(290). The date range is restricted by the first and last time point.
Abstract:
An information processing apparatus and an information processing method are provided to offer a user interface capable of operating a plurality of applications in common, thereby improving the possibility of access by the visually handicapped. An information processing apparatus(10) comprises the followings: a document converting unit(22) which converts an instinct document, which is written by each of a plurality of applications and is shown to a data structure of each application program, into a common document(200) shown to a common data structure; an output unit(28) which outputs the common document to a user; an input unit(28) which inputs the operation of the user for the common document; an interface adaptor unit(30); a changing unit(22); and a change reflecting unit(32).
Abstract:
A method for aligning a semiconductor device structure is provided to align efficiently even a first mark set by forming first and second align mark sets in the same mask level. A first align mark set(106a) is formed in the lower level of a semiconductor device structure, and a second align mark set(106b) is formed near the first align mark set. An opaque layer is formed on the lower level of the semiconductor device structure including first and second align mark sets. A part of the opaque layer corresponding to the position of the first align mark set is opened so that the first align mark set is optically monitored and the second align mark set is left as the second align mark is initially covered with the opaque layer. The opaque layer is lithographically patterned by using the optically monitored first align mark set. The first and the second align mark sets can include both align marks(102) and overlay boxes(104).
Abstract:
A system, a method, and a medium for processing a spreadsheet to store the spreadsheet to a database are provided to process/store the spreadsheet to the database by automatically processing records of the spreadsheet and applying a conventional validation/business process logic. A request for processing the spreadsheet including a plurality of records to store the spreadsheet to the database is received(502). A configuration file related to the spreadsheet is generated by receiving more than one name of a business object related to the record of the spreadsheet, metadata for more than one column of the spreadsheet, and the name of a back-end business component related to the spreadsheet. The generated configuration file is accessed(508). A new business object is generated for each record of the spreadsheet, and is populated based on the records and the configuration file(514). Each new business object is transferred to a back-end business application(516).
Abstract:
입력/출력 처리 시스템에서 제어 유닛과 채널 서브시스템간의 통신을 처리하기 위한 컴퓨터 프로그램 제품, 장치, 및 방법이 개시되었다. 컴퓨터 프로그램 제품은 처리회로로 판독할 수 있고 처리회로로 실행하기 위한 명령어를 저장하는 유형의 저장 매체를 포함한다. 상기 방법은 입력/출력 동작을 개시시키기 위해 채널 서브시스템으로부터 제어 유닛에 명령어를 전송하는 것; 동작의 완료에 대한 소정 기간을 설정하는 것; 및 소정 기간내에 동작이 완료되지 않았다는 것에 응답하여, 제어 유닛이 명령어에 대한 교환을 개설하였는 지에 대한 여부를 결정하기 위해 메시지를 전송하는 것을 포함한다.
Abstract:
PURPOSE: A side coating method for a non-uniform spin momentum transfer magnetic tunnel junction current flow is provided to improve current flow through spacer materials on sidewalls by the electric conductivity between a stud and spacer materials. CONSTITUTION: A seed layer(104) is formed on an underlying patterned wiring layer(102). An anti- ferroelectric material layer(106) is formed on the seed layer. A reference layer(108) is formed on the anti- ferroelectric material layer. A magnetic tunnel junction barrier(110) is formed on the reference layer. A free layer(112) is formed on the magnetic tunnel junction barrier.
Abstract:
PURPOSE: An interlayer interconnection for a multilayer semiconductor stack is provided to easily perform a communication between functional units using a universal and standardized interlayer bus. CONSTITUTION: Contact pads(22) are arranged on the surface of a semiconductor die(12). A gray pad(24) is interposed in an interlayer interface region(18). The gray pad is combined with a conductor for an interlayer bus. A black pad(26) is combined with a positive voltage or a ground. A white pad is electrically separated from an active circuit.