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    Trilayered beam MEMS device and related methods
    81.
    发明公开
    Trilayered beam MEMS device and related methods 有权
    MEMS-Schalter mit dreischichtigem Biegebalken unddiesbezüglicheVerfahren

    公开(公告)号：EP1717195A1

    公开(公告)日：2006-11-02

    申请号：EP06118802.5

    申请日：2002-11-08

    Applicant: WiSpry, Inc.

    Inventor： Cunningham, Shawn, J. ,  Tatic-Lucic, Svetlana

    IPC: B81B3/00

    CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

    Abstract: Trilayered Beam MEMS Device and Related Methods. According to one embodiment, a method for fabricating a trilayered beam is provided. The method can include depositing a sacrificial layer on a substrate and depositing a first conductive layer on the sacrificial layer. The method can also include forming a first conductive microstructure by removing a portion of the first conductive layer. Furthermore, the method can include depositing a structural layer on the first conductive microstructure, the sacrificial layer, and the substrate and forming a via through the structural layer to the first conductive microstructure. Still furthermore, the method can include the following: depositing a second conductive layer on the structural layer and in the via; forming a second conductive microstructure by removing a portion of the second conductive layer, wherein the second conductive microstructure electrically communicates with the first conductive microstructure through the via; and removing a sufficient amount of the sacrificial layer so as to separate the first conductive microstructure from the substrate, wherein the structural layer is supported by the substrate at a first end and is freely suspended above the substrate at an opposing second end.

    Abstract translation: 三层梁MEMS器件及相关方法。 根据一个实施例，提供一种制造三层梁的方法。 该方法可以包括在衬底上沉积牺牲层并在牺牲层上沉积第一导电层。 该方法还可以包括通过去除第一导电层的一部分来形成第一导电微结构。 此外，该方法可以包括在第一导电微结构，牺牲层和衬底上沉积结构层，并且通过结构层将通孔形成到第一导电微结构。 此外，该方法可以包括以下：在结构层和通孔中沉积第二导电层; 通过去除所述第二导电层的一部分来形成第二导电微结构，其中所述第二导电微结构通过所述通孔与所述第一导电微结构电连通; 并且去除足够量的牺牲层以便将第一导电微结构与衬底分开，其中结构层在第一端由衬底支撑并且在相对的第二端处自由地悬挂在衬底上方。

    Trilayered Beam MEMS device and related methods
    82.
    发明公开
    Trilayered Beam MEMS device and related methods 有权
    三层梁MEMS器件及相关方法

    公开(公告)号：EP1717194A1

    公开(公告)日：2006-11-02

    申请号：EP06118800.9

    申请日：2002-11-08

    Applicant: WiSpry, Inc.

    Inventor： Cunningham, Shawn, J. ,  Tatic-Lucic, Svetlana

    IPC: B81B3/00

    CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

    Abstract: Trilayered Beam MEMS Device and Related Methods. According to one embodiment, a method for fabricating a trilayered beam is provided. The method can include depositing a sacrificial layer on a substrate and depositing a first conductive layer on the sacrificial layer. The method can also include forming a first conductive microstructure by removing a portion of the first conductive layer. Furthermore, the method can include depositing a structural layer on the first conductive microstructure, the sacrificial layer, and the substrate and forming a via through the structural layer to the first conductive microstructure. Still furthermore, the method can include the following: depositing a second conductive layer on the structural layer and in the via; forming a second conductive microstructure by removing a portion of the second conductive layer, wherein the second conductive microstructure electrically communicates with the first conductive microstructure through the via; and removing a sufficient amount of the sacrificial layer so as to separate the first conductive microstructure from the substrate, wherein the structural layer is supported by the substrate at a first end and is freely suspended above the substrate at an opposing second end.

    Abstract translation: 三层束MEMS器件及相关方法。 根据一个实施例，提供了一种用于制造三层光束的方法。 该方法可以包括在衬底上沉积牺牲层并且在牺牲层上沉积第一导电层。 该方法还可以包括通过去除第一导电层的一部分来形成第一导电微结构。 此外，该方法可以包括在第一导电微结构，牺牲层和衬底上沉积结构层，并且形成穿过结构层到达第一导电微结构的通孔。 此外，该方法可以包括以下步骤：在结构层上和通孔中沉积第二导电层; 通过去除所述第二导电层的一部分来形成第二导电微结构，其中所述第二导电微结构通过所述通孔与所述第一导电微结构电连通; 以及去除足够量的牺牲层以便将第一导电微结构与衬底分离，其中结构层在第一端处由衬底支撑并且在相对的第二端处自由地悬挂在衬底上方。

    Multi-metal layer MEMS structure and process for making the same
    85.
    发明公开
    Multi-metal layer MEMS structure and process for making the same 有权
    Multimetallschicht MEMS-Struktur und deren Herstellungsverfahren

    公开(公告)号：EP1443017A2

    公开(公告)日：2004-08-04

    申请号：EP04380016.8

    申请日：2004-01-22

    Applicant: Akustica Inc.

    Inventor： Gabriel, Kaigham J. ,  Zhu, Xu

    IPC: B81B3/00

    CPC classification number: B81C1/00158 ,  B81B2201/018 ,  B81B2201/0257 ,  B81C2201/0109 ,  H01G5/16

    Abstract: The present invention is directed to a structure comprised of alternating layers of metal and sacrificial material built up using standard CMOS processing techniques, a process for building such a structure, a process for fabricating devices from such a structure, and the devices fabricated from such a structure. In one embodiment, a first metal layer is carried by a substrate. A first sacrificial layer is carried by the first metal layer. A second metal layer is carried by the sacrificial layer. The second metal layer has a portion forming a micro-machined metal mesh. When the portion of the first sacrificial layer in the area of the micro-machined metal mesh is removed, the micro-machined metal mesh is released and suspended above the first metal layer a height determined by the thickness of the first sacrificial layer. The structure may be varied by providing a base layer of sacrificial material between the surface of the substrate and the first metal layer. In that manner, a portion of the first metal layer may form a micro-machined mesh which is released when a portion of the base sacrificial layer in the area of the micro-machined mesh is removed. Additionally, a second layer of sacrificial material and a third metal layer may be provided. A micro-machined mesh may be formed in a portion of the third metal layer. The structure of the present invention may be used to construct variable capacitors, switches and, when certain of the meshes are sealed, microspeakers and microphones.

    Abstract translation: 本发明涉及由使用标准CMOS处理技术构建的金属和牺牲材料的交替层的结构，用于构建这种结构的工艺，用于从这种结构制造器件的工艺以及由这样的器件制造的器件 结构体。 在一个实施例中，第一金属层由衬底承载。 第一牺牲层由第一金属层承载。 第二金属层由牺牲层承载。 第二金属层具有形成微加工金属网的部分。 当去除微加工金属网的区域中的第一牺牲层的部分时，微加工金属网被释放并悬浮在第一金属层上方的高度由第一牺牲层的厚度确定。 可以通过在基板的表面和第一金属层之间提供牺牲材料的基层来改变结构。 以这种方式，第一金属层的一部分可以形成微机加工的网，当微细加工的网的区域中的部分基底牺牲层被去除时，其被释放。 另外，可以提供第二层牺牲材料和第三金属层。 微加工网可以形成在第三金属层的一部分中。 本发明的结构可用于构造可变电容器，开关，并且当某些网格被密封时，微型扬声器和麦克风。

    VERFAHREN ZUM HERSTELLEN EINES MIKROMECHANISCHEN RELAIS
    86.
    发明公开
    VERFAHREN ZUM HERSTELLEN EINES MIKROMECHANISCHEN RELAIS 失效
    一种用于生产微机械式继电器

    公开(公告)号：EP0938738A1

    公开(公告)日：1999-09-01

    申请号：EP97950134.0

    申请日：1997-11-06

    Applicant: FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.

    Inventor： SCHIELE, Ignaz ,  KOZLOWSKI, Frank

    IPC: B81B3 ,  B81C1 ,  H01H59

    CPC classification number: B81C1/00936 ,  B81B2201/018 ,  H01H59/0009 ,  H01H2059/0018 ,  H01H2059/0072

    Abstract: The invention relates to a method for manufacturing a micromechanical relay comprising the preparation of a substrate (10) having a fixed conductive electrode (18) in the substrate (10) or on the same. A sacrificial layer (26) and a conductive layer (32) are applied, the conductive layer (32) being structured as a movable counter electrode (39) in relation to the fixed electrode (18) in order to fix a lug structure. A contact segment (40) is applied, wherein the conductive layer (32) extends between an anchoring area (54) and a contact area (40) and is isolated with respect to the contact area. Subsequently, the sacrificial layer (26) is removed by etching to produce a movable segment and a segment fixed to the substrate (10) in the anchoring area (54) in the lug structure, which is fixed in such a way, that the etching access openings in the same are structured in such a way that the surface expansion of the etching access openings (66) to etch the sacrificial layer (26) increases from the area of the lug structure (54) fixed to the substrate (10) to the movable area of the lug structure.

    ELECTROMECHANICAL RELAY DEVICE
    87.
    发明申请
    ELECTROMECHANICAL RELAY DEVICE 审中-公开
    机电式继电器

    公开(公告)号：WO2017153773A1

    公开(公告)日：2017-09-14

    申请号：PCT/GB2017/050655

    申请日：2017-03-10

    Applicant: THE UNIVERSITY OF BRISTOL

    Inventor： RANA, Sunil ,  PAMUNUWA, Dinesh ,  BOODHOO, Liam Anand ,  CHONG, Harold Meng Hoon

    IPC: H01H59/00 ,  H01H1/00

    CPC classification number: H01H59/0009 ,  B81B3/0005 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/019 ,  H01H2001/0052 ,  H01H2001/0057 ,  H01H2001/0078 ,  H01H2201/026 ,  H01H2209/002 ,  H01H2209/016 ,  H01H2227/002

    Abstract: A electromechanical relay device (100) comprising a source electrode (102), a beam (104) mounted on the source electrode at a first end and electrically coupled to the source electrode; a first drain electrode (112) located adjacent a second end of the beam, wherein a first contact (110) on the beam is arranged to be separated from a second contact (112) on the first drain electrode when the relay device is in a first condition; a first gate electrode (106arranged to cause the beam to deflect,to electrically couple the first contact and the second contact such that the device is in a second condition; and wherein the first and second contacts are each coated with a layer of nanocrystalline graphite.

    Abstract translation: 一种机电中继装置（100），包括源电极（102），在第一端部处安装在源电极上并且电耦合到源电极的梁（104） 位于所述光束的第二端附近的第一漏电极（112），其中所述光束上的第一触点（110）被布置成当所述中继器件处于所述第一漏电极上时与所述第一漏电极上的第二触点（112）分离 第一条件; 第一栅极电极（106，其被安排成使所述束偏转，以电耦合所述第一触点和所述第二触点，使得所述装置处于第二状态;并且其中所述第一和第二触点各自涂覆有纳米晶体石墨层。

    ELIMINATION OF SILICON RESIDUES FROM MEMS CAVITY FLOOR
    88.
    发明申请
    ELIMINATION OF SILICON RESIDUES FROM MEMS CAVITY FLOOR 审中-公开
    从MEMS CAVITY地板消除硅残余物

    公开(公告)号：WO2013020039A3

    公开(公告)日：2013-03-21

    申请号：PCT/US2012049497

    申请日：2012-08-03

    Applicant: CAVENDISH KINETICS INC ,  TROY BRIAN I ,  RENAULT MICKAEL ,  MAGUIRE THOMAS L ,  LACEY JOSEPH DAMIAN GORDON ,  BOBEY JAMES F

    Inventor： TROY BRIAN I ,  RENAULT MICKAEL ,  MAGUIRE THOMAS L ,  LACEY JOSEPH DAMIAN GORDON ,  BOBEY JAMES F

    IPC: B81C1/00 ,  H01H1/00

    CPC classification number: B81C1/00484 ,  B81B3/0008 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81C2201/0108 ,  H01H1/0036 ,  H01H2001/0089

    Abstract: The present invention generally relates to a MEMS device in which silicon residues from the adhesion promoter material are reduced or even eliminated from the cavity floor. The adhesion promoter is typically used to adhere sacrificial material to material above the substrate. The adhesion promoter is then removed along with the sacrificial material. However, the adhesion promoter leaves silicon based residues within the cavity upon removal. The inventors have discovered that the adhesion promoter can be removed from the cavity area prior to depositing the sacrificial material. The adhesion promoter which remains over the remainder of the substrate is sufficient to ad¬ here the sacrificial material to the substrate without fear of the sacrificial material delaminating. Because no adhesion promoter is used in the cavity area of the device, no silicon residues will be present within the cavity after the switching element of the MEMS device is freed.

    Abstract translation: 本发明一般涉及一种MEMS器件，其中来自粘合促进剂材料的硅残余物从空腔底板减少甚至消除。 粘合促进剂通常用于将牺牲材料粘附到衬底上方的材料上。 然后将粘附促进剂与牺牲材料一起除去。 然而，粘合促进剂在除去后将空穴中的硅基残留物留下。 发明人已经发现，在沉积牺牲材料之前，可以从空腔区域去除粘合促进剂。 保留在基材剩余部分的粘合促进剂足以将牺牲材料附加到基材上，而不用担心牺牲材料分层。 因为在器件的空腔区域中没有使用粘合促进剂，所以在MEMS器件的开关元件被释放之后，腔内将不存在硅残余物。

    NONVOLATILE NANO-ELECTROMECHANICAL SYSTEM DEVICE
    90.
    发明申请
    NONVOLATILE NANO-ELECTROMECHANICAL SYSTEM DEVICE 审中-公开
    非挥发性纳米机电系统装置

    公开(公告)号：WO2011057844A1

    公开(公告)日：2011-05-19

    申请号：PCT/EP2010/063888

    申请日：2010-09-21

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  IBM UNITED KINGDOM LIMITED ,  COHEN, Guy ,  FRANK, David, James

    Inventor： COHEN, Guy ,  FRANK, David, James

    IPC: B81B3/00

    CPC classification number: B81B3/0072 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2207/053 ,  B81C2201/0167

    Abstract: A nonvolatile nano-electromechanical system device is provided and includes a cantilever structure, including a beam having an initial shape, which is supported at one end thereof by a supporting base and a beam deflector, including a phase change material (PCM), disposed on a portion of the beam in a non-slip condition with a material of the beam, the PCM taking one of an amorphous phase or a crystalline phase and deflecting the beam from the initial shape when taking the crystalline phase.

    Abstract translation: 提供了非易失性纳米机电系统装置，其包括悬臂结构，其包括具有初始形状的梁，所述梁的一端由支撑基座支撑，并且梁偏转器包括相变材料（PCM），所述相变材料 光束的一部分处于防滑状态，具有光束的材料，PCM采取非晶相或结晶相中的一种，并且在获取结晶相时将光束从初始形状偏转。

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