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    A METHOD OF FORMING A FLOW RESTRICTION IN A FLUID COMMUNICATION SYSTEM
    83.
    发明申请
    A METHOD OF FORMING A FLOW RESTRICTION IN A FLUID COMMUNICATION SYSTEM 审中-公开
    在流体通信系统中形成流量限制的方法

    公开(公告)号：WO2010040354A1

    公开(公告)日：2010-04-15

    申请号：PCT/DK2009/000217

    申请日：2009-10-07

    Applicant: DIRAMO A/S ,  POULSEN, Kristian, Raaby ,  RASMUSSEN, Peter, Andreas

    Inventor： POULSEN, Kristian, Raaby ,  RASMUSSEN, Peter, Andreas

    IPC: F16K99/00 ,  B01L3/00 ,  B81B1/00

    CPC classification number: F16K99/0001 ,  B01L2400/0633 ,  B81B2201/054 ,  B81C1/00119 ,  F16K99/0021 ,  Y10T29/494

    Abstract: A method of forming a flow restriction in a fluid communication system is disclosed. The method comprises the steps of providing a flow restricting section having a cross sectional area and a length, measuring the flow resistivity of the flow restricting section, and modifying the cross sectional area and/or the length of the flow restricting section until a desired flow resistivity of the flow restricting section is obtained. The method provides the possibility of forming a flow restriction in an easy and cost effective manner, and to subsequently adjust the flow resistivity of the flow restriction, thereby obtaining an accurate flow resistivity.

    Abstract translation: 公开了一种在流体通信系统中形成流量限制的方法。 该方法包括以下步骤：提供具有横截面面积和长度的流量限制部分，测量流动限制部分的流动阻力，以及修改流动限制部分的横截面面积和/或长度，直到所需流动 获得流量限制部分的电阻率。 该方法提供了以容易且成本有效的方式形成流动限制的可能性，并且随后调节流动限制的流动阻力，从而获得精确的流动阻力。

    MEMS DEVICE HAVING A LAYER MOVABLE AT ASYMMETRIC RATES
    84.
    发明申请
    MEMS DEVICE HAVING A LAYER MOVABLE AT ASYMMETRIC RATES 审中-公开
    具有以不对称速率移动的层的MEMS器件

    公开(公告)号：WO2007100478A3

    公开(公告)日：2008-01-17

    申请号：PCT/US2007003647

    申请日：2007-02-12

    Applicant: QUALCOMM INC ,  MIGNARD MARC ,  KOGUT LIOR

    Inventor： MIGNARD MARC ,  KOGUT LIOR

    IPC: G02B26/00 ,  B81B3/00 ,  G09G3/34

    CPC classification number: G02B26/001 ,  B81B3/0078 ,  B81B2201/047 ,  B81B2201/054 ,  B81B2203/053 ,  G09G3/3466 ,  G09G2300/06

    Abstract: A microelectromechanical (MEMS) device includes a substrate and a movable layer mechanically coupled to the substrate. The movable layer moves from a first position to a second position at a first rate and from the second position to the first position at a second rate faster than the first rate. The MEMS device further includes an adjustable cavity defined between the substrate and the movable layer and containing a fluid. The MEMS device further includes a fluid conductive element through which the fluid flows at a first flowrate from inside the cavity to outside the cavity upon movement of the movable layer from the second position to the first position and through which the fluid flows at a second flowrate slower than the first flowrate from outside the cavity to inside the cavity upon movement of the movable layer from the first position to the second position.

    Abstract translation: 微机电（MEMS）装置包括基板和机械耦合到基板的可移动层。 可移动层以第一速率从第一位置移动到第二位置，并且以比第一速率快的第二速率从第二位置移动到第一位置。 MEMS器件还包括限定在衬底和可移动层之间并包含流体的可调节空腔。 MEMS装置还包括流体导电元件，当可移动层从第二位置移动到第一位置时，流体从腔体内部以第一流量流动到腔体外部，并且流体以第二流量流动 当从可移动层从第一位置移动到第二位置时，其比从空腔外部到腔体内部的第一流速慢。

    MEMS DEVICE HAVING A LAYER MOVABLE AT ASYMMETRIC RATES
    85.
    发明申请
    MEMS DEVICE HAVING A LAYER MOVABLE AT ASYMMETRIC RATES 审中-公开
    具有以不对称速率移动的层的MEMS器件

    公开(公告)号：WO2007100478A2

    公开(公告)日：2007-09-07

    申请号：PCT/US2007/003647

    申请日：2007-02-12

    Applicant: QUALCOMM INCORPORATED ,  MIGNARD, Marc ,  KOGUT, Lior

    Inventor： MIGNARD, Marc ,  KOGUT, Lior

    IPC: G02B26/00 ,  B81B3/00

    CPC classification number: G02B26/001 ,  B81B3/0078 ,  B81B2201/047 ,  B81B2201/054 ,  B81B2203/053 ,  G09G3/3466 ,  G09G2300/06

    Abstract: A microelectromechanical (MEMS) device includes a substrate and a movable layer mechanically coupled to the substrate. The movable layer moves from a first position to a second position at a first rate and from the second position to the first position at a second rate faster than the first rate. The MEMS device further includes an adjustable cavity defined between the substrate and the movable layer and containing a fluid. The MEMS device further includes a fluid conductive element through which the fluid flows at a first flowrate from inside the cavity to outside the cavity upon movement of the movable layer from the second position to the first position and through which the fluid flows at a second flowrate slower than the first flowrate from outside the cavity to inside the cavity upon movement of the movable layer from the first position to the second position.

    Abstract translation: 微机电（MEMS）装置包括基板和机械耦合到基板的可移动层。 可移动层以第一速率从第一位置移动到第二位置，并且以比第一速率快的第二速率从第二位置移动到第一位置。 MEMS器件还包括限定在衬底和可移动层之间并包含流体的可调节空腔。 MEMS装置还包括流体导电元件，当可移动层从第二位置移动到第一位置时，流体从腔体内部以第一流量流动到腔体外部，并且流体以第二流量流动 当从可移动层从第一位置移动到第二位置时，其比从空腔外部到腔体内部的第一流速慢。

    METHOD FOR PRODUCING AND TESTING A CORROSION-RESISTANT CHANNEL IN A SILICON DEVICE
    90.
    发明申请
    METHOD FOR PRODUCING AND TESTING A CORROSION-RESISTANT CHANNEL IN A SILICON DEVICE 审中-公开
    在硅器件中生产和测试耐腐蚀通道的方法

    公开(公告)号：WO2004047148A2

    公开(公告)日：2004-06-03

    申请号：PCT/US0336669

    申请日：2003-11-17

    Applicant: REDWOOD MICROSYSTEMS INC

    Inventor： HARRIS JAMES M ,  PATEL SAPNA

    IPC: B81B7/00 ,  B81C99/00 ,  F16K99/00 ,  H01L21/02 ,  H01L21/66 ,  H01L23/544 ,  H01L

    CPC classification number: H01L22/20 ,  B81B7/0012 ,  B81B2201/054 ,  B81B2201/058 ,  B81C99/0045 ,  B81C2203/038 ,  F16K99/0001 ,  F16K99/0015 ,  F16K99/0034 ,  F16K99/0036 ,  F16K99/0059 ,  F16K2099/0074 ,  H01L21/02071 ,  H01L22/24 ,  H01L22/34

    Abstract: A method for producing a corrosion-resistant channel in a wetted path of a silicon device enables such device to be used with corrosive compounds, such as fluorine. A wetted path of a MEMS device is coated with either (1) an organic compound resistant to attack by atomic fluorine or (2) a material capable of being passivated by atomic fluorine. The device is then exposed to a gas that decomposes into active fluorine compounds when activated by a plasma discharge. One example of such a gas is CF4, an inert gas that is easier and safer to work with than volatile gases like CIF3. The gas will passivate the material (if applicable) and corrode any exposed silicon. The device is tested in such a manner that any unacceptable corrosion of the wetted path will cause the device to fail. If the device operates properly, the wetted path is deemed to be resistant to corrosion by fluorine or other corrosive compounds, as applicable.

    Abstract translation: 在硅装置的润湿路径中制造耐腐蚀通道的方法使得这种装置能够与诸如氟的腐蚀性化合物一起使用。 MEMS器件的润湿路径涂覆有（1）抗原子氟侵蚀的有机化合物或（2）能够被原子氟钝化的材料。 然后将该装置暴露于当通过等离子体放电激活时分解成活性氟化合物的气体。 这种气体的一个例子是CF4，惰性气体比诸如CIF3的挥发性气体更容易和更安全地工作。 气体将钝化材料（如果适用）并腐蚀任何暴露的硅。 该装置以这样的方式被测试，使得湿润路径的任何不可接受的腐蚀将导致装置失效。 如果设备正常工作，则湿润路径被认为是耐氟或其他腐蚀性化合物的腐蚀，如适用的。

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