公开(公告)号：KR1020150031326A

公开(公告)日：2015-03-23

申请号：KR1020157002963

申请日：2013-06-19

Applicant: 퀄컴 엠이엠에스 테크놀로지스, 인크.

Inventor： 기리,샌딥케이.

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0005 ,  B81B3/001 ,  B81B2201/042 ,  B81C2201/0107 ,  B81C1/00015

Abstract: 본 개시물은, 개선된 전기 특성들 및 디바이스 수명 기간(life span)을 갖는, 전기기계 시스템 디바이스들에 대한 시스템들, 방법들 및 장치를 제공한다. 일 양상에서, 컨포멀한 점착방지 층은 거친 표면 위, 전기기계 시스템 장치의 공동 내에 형성된다. 컨포멀한 점착방지 층은 유전체 층을 포함할 수 있다. 컨포멀한 점착방지 층은 유전체 층 위에 형성된 자가 조립 단분자층(SAM)을 포함할 수 있다. 컨포멀한 점착방지 층은, 이 컨포멀한 점착방지 층이 증착되는 표면의 거칠기를 복제할 수 있다.

公开(公告)号：KR100471744B1

公开(公告)日：2005-03-16

申请号：KR1020020018215

申请日：2002-04-03

Applicant: 재단법인서울대학교산학협력재단

Inventor： 민경덕 ,  주영창 ,  송성진 ,  김세준 ,  민홍석 ,  박건중

IPC: H01L21/3065

CPC classification number: B81C1/00087 ,  B81C2201/0107 ,  B81C2201/0112 ,  B81C2201/0132 ,  H01L21/3081 ,  H01L21/32134

Abstract: 공정을 단순화시키며, 기판의 냉각을 효율적으로 수행시키고, 플라즈마 이온 플럭스의 흐름을 일정하게 유지할 수 있는 기판 관통 식각방법이 개시된다. 본 발명의 일 형태에 따른 기판 관통 식각방법은, 기판의 제1 면 상에 버퍼층과 금속층을 형성하고, 상기 제1 면과 반대되는 상기 기판의 제2 면 상에 식각마스크 패턴을 형성한 후 이를 식각마스크로 하여 상기 기판을 관통 식각한다. 바람직하게는 버퍼층은 이산화실리콘층이며, 금속층은 알루미늄층을 사용한다.

公开(公告)号：KR1020080106932A

公开(公告)日：2008-12-09

申请号：KR1020087022861

申请日：2007-02-07

Applicant: 퀄컴 엠이엠에스 테크놀로지스, 인크.

Inventor： 쵸우,첸-진 ,  우,천-첸 ,  브린클리,패트릭,에프.

IPC: B81C1/00 ,  B81C99/00 ,  G02B26/00 ,  H04Q11/00

CPC classification number: B81C99/004 ,  B81B2201/047 ,  B81C1/00714 ,  B81C2201/0107 ,  G02B26/001

Abstract: A method of fabricating a MEMS device includes conditioning of an insulating layer by applying a voltage across the insulating layer via a conductive sacrificial layer for a period of time, prior to removal of the conductive sacrificial layer. This conditioning process may be used to saturate or stabilize charge accumulated within the insulating layer. The resistance across the insulating layer may also be measured to detect possible defects in the insulating layer. ® KIPO & WIPO 2009

Abstract translation: 制造MEMS器件的方法包括通过在去除导电牺牲层之前通过导电牺牲层在绝缘层上施加电压一段时间来调节绝缘层。 该调理过程可用于饱和或稳定在绝缘层内积聚的电荷。 还可以测量绝缘层两端的电阻，以检测绝缘层中的可能缺陷。 ®KIPO＆WIPO 2009

公开(公告)号：KR1020020041363A

公开(公告)日：2002-06-01

申请号：KR1020020018215

申请日：2002-04-03

Applicant: 재단법인서울대학교산학협력재단

Inventor： 민경덕 ,  주영창 ,  송성진 ,  김세준 ,  민홍석 ,  박건중

IPC: H01L21/3065

CPC classification number: B81C1/00087 ,  B81C2201/0107 ,  B81C2201/0112 ,  B81C2201/0132 ,  H01L21/3081 ,  H01L21/32134

Abstract: PURPOSE: A method of through-etching substrate is provided to efficiently perform a cooling processing of a substrate and to improve a profile around a penetrated hole by using a metal material. CONSTITUTION: A buffer(62) made of a silicon dioxide is formed on a surface of a silicon substrate(50) having a hole. Then, a metal film(64) made of an aluminum is formed on the buffer(62). After depositing another buffer(72) and another metal film(74) on the rear surface of the silicon substrate(50), an etch mask pattern(66) is formed on the metal film(74). After etching the metal film(74) and the buffer(72) using the etch mask pattern(66) as an etch mask, the silicon substrate(50) is penetrated by etching using the metal film(74) and the buffer(72) as another etch mask. Due to the metal films(64,74), plasma ion flux is smoothly circulated, so that a good profile is completed.

Abstract translation: 目的：提供一种通过蚀刻基板的方法，以有效地执行基板的冷却处理，并且通过使用金属材料来改善穿透孔周围的轮廓。 构成：在具有孔的硅衬底（50）的表面上形成由二氧化硅制成的缓冲器（62）。 然后，在缓冲器（62）上形成由铝制成的金属膜（64）。 在硅衬底（50）的后表面上沉积另一缓冲器（72）和另一金属膜（74）之后，在金属膜（74）上形成蚀刻掩模图案（66）。 在使用蚀刻掩模图案（66）蚀刻金属膜（74）和缓冲器（72）作为蚀刻掩模之后，通过使用金属膜（74）和缓冲器（72）的蚀刻来穿透硅衬底（50） 作为另一种蚀刻掩模。 由于金属膜（64,74），等离子体离子通量平稳地循环，从而完成了良好的轮廓。

公开(公告)号：US09932222B2

公开(公告)日：2018-04-03

申请号：US15162994

申请日：2016-05-24

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Michael T. Brigham ,  Christopher V. Jahnes ,  Cameron E. Luce ,  Jeffrey C. Maling ,  William J. Murphy ,  Anthony K. Stamper ,  Eric J. White

IPC: B81C1/00 ,  G06F17/50 ,  B81B3/00

CPC classification number: B81C1/0015 ,  B81B3/0021 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2207/09 ,  B81C1/00047 ,  B81C1/00269 ,  B81C1/00365 ,  B81C1/00531 ,  B81C1/00936 ,  B81C2201/0104 ,  B81C2201/0107 ,  B81C2201/0121 ,  B81C2201/0125 ,  B81C2201/0132 ,  B81C2201/0176 ,  B81C2201/0181 ,  B81C2203/0109 ,  B81C2203/0145 ,  B81C2203/0714 ,  G06F17/5009

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

公开(公告)号：US09090975B2

公开(公告)日：2015-07-28

申请号：US13164305

申请日：2011-06-20

Applicant: Heiko Specht ,  Andreas Reisinger ,  Ulrich Hausch ,  Frank Krueger ,  Jens Troetzschel

Inventor： Heiko Specht ,  Andreas Reisinger ,  Ulrich Hausch ,  Frank Krueger ,  Jens Troetzschel

IPC: C23C28/02 ,  B81C1/00

CPC classification number: C23C28/023 ,  B81C1/00619 ,  B81C2201/0107 ,  B81C2201/0181

Abstract: One aspect is a method for the production of a three-dimensional structure of successive layers producing a multitude of successive layers wherein, with the exception of a first layer, each of the successive layers is arranged on a preceding layer. Each of the successive layers includes at least two materials wherein one material is a sacrificial material and one material is a structure material. Each of the successive layers defines a successive cross-section through the three-dimensional structure. Producing each of the layers includes depositing the sacrificial material by means of an electrochemical process and depositing the structure material by means of physical gas phase deposition. After a multitude of successive layers has been produced, the three-dimensional structure is uncovered by removing at least a part of the sacrificial material. The sacrificial material is at least one of a group consisting of nickel, silver, palladium, and gold.

Abstract translation: 一个方面是制造连续层的产生多个连续层的三维结构的方法，其中除了第一层之外，每个连续层被布置在前一层上。 每个连续层包括至少两种材料，其中一种材料是牺牲材料，一种材料是结构材料。 每个连续的层限定通过三维结构的连续横截面。 生产每个层包括通过电化学方法沉积牺牲材料并通过物理气相沉积沉积结构材料。 在已经生产了多个连续层之后，通过去除至少一部分牺牲材料来覆盖三维结构。 牺牲材料是由镍，银，钯和金组成的组中的至少一种。

公开(公告)号：US20140308771A1

公开(公告)日：2014-10-16

申请号：US13861620

申请日：2013-04-12

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Michael T. Brigham ,  Christopher V. Jahnes ,  Cameron E. Luce ,  Jeffrey C. Maling ,  William J. Murphy ,  Anthony K. Stamper ,  Eric J. White

IPC: B81C1/00 ,  G06F17/50

CPC classification number: B81C1/0015 ,  B81B3/0021 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2207/09 ,  B81C1/00047 ,  B81C1/00269 ,  B81C1/00365 ,  B81C1/00531 ,  B81C1/00936 ,  B81C2201/0104 ,  B81C2201/0107 ,  B81C2201/0121 ,  B81C2201/0125 ,  B81C2201/0132 ,  B81C2201/0176 ,  B81C2201/0181 ,  B81C2203/0109 ,  B81C2203/0145 ,  B81C2203/0714 ,  G06F17/5009

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

Abstract translation: 公开了微机电系统（MEMS）结构，制造方法和设计结构。 该方法包括通过在MEMS光束上方和下方排出钨材料和硅材料来形成微电子机械系统（MEMS）光束结构，以在MEMS光束上方形成上腔体，并在MEMS光束下方形成下腔体结构。

公开(公告)号：US20140054261A1

公开(公告)日：2014-02-27

申请号：US14040698

申请日：2013-09-29

Applicant: Viswanadam Gautham

Inventor： Viswanadam Gautham

IPC: B81C1/00

CPC classification number: B81C1/00341 ,  B81B2201/051 ,  B81B2203/0315 ,  B81B2203/0338 ,  B81C1/00476 ,  B81C2201/0107 ,  B81C2203/036 ,  H01L21/00

Abstract: A method of fabricating a micro-device having micro-features on glass is presented. The method includes the steps of preparing a first glass substrate, fabricating a metallic pattern on the first glass substrate, preparing a second glass substrate and providing one or more apertures on the second glass substrate, heating the first glass substrate and the second glass substrate with a controlled temperature raise, bonding the first glass substrate and the second glass substrate by applying pressure to form a bonded substrate, wherein the metallic pattern is embedded within the bonded substrate, cooling the bonded substrate with a controlled temperature drop and thereafter maintaining the bonded substrate at a temperature suitable for etching, etching the metallic pattern within the bonded substrate, wherein an etchant has access to the metallic pattern via the apertures, forming a void within the bonded substrate, wherein the void comprises micro-features.

Abstract translation: 提出了一种在玻璃上制造具有微特征的微器件的方法。 该方法包括以下步骤：制备第一玻璃基板，在第一玻璃基板上制造金属图案，制备第二玻璃基板并在第二玻璃基板上提供一个或多个孔，加热第一玻璃基板和第二玻璃基板， 控制温度升高，通过施加压力来接合第一玻璃基板和第二玻璃基板以形成接合基板，其中金属图案嵌入在接合基板内，以受控的温度下降冷却接合基板，然后保持接合基板 在适于蚀刻的温度下蚀刻所述键合衬底内的所述金属图案，其中所述蚀刻剂经由所述孔进入所述金属图案，在所述键合衬底内形成空隙，其中所述空隙包括微特征。

公开(公告)号：US20130335383A1

公开(公告)日：2013-12-19

申请号：US13527467

申请日：2012-06-19

Applicant: Teruo Sasagawa

Inventor： Teruo Sasagawa

IPC: C23F1/02 ,  G06F3/038 ,  G06T1/00 ,  G02B26/00 ,  H05K13/00

CPC classification number: G02B26/001 ,  B81C1/00476 ,  B81C2201/0107 ,  B81C2201/0132 ,  C23F4/00

Abstract: This disclosure provides systems, methods and apparatus which involve selectively removing a sacrificial portion of molybdenum (Mo) relative to other structural materials in a self-limiting manner. The Mo is only partially removed, leaving behind a remaining portion of molybdenum. The self-limiting etch can form an internal cavity by removing only a portion of a Mo layer between electromechanical systems electrodes. The remaining Mo can serve as a support structure between the electrodes.

Abstract translation: 本公开提供了涉及以自限制的方式相对于其他结构材料选择性地去除钼（Mo）的牺牲部分的系统，方法和装置。 Mo仅部分除去，留下剩余部分的钼。 自限蚀刻可以通过在机电系统电极之间仅去除Mo层的一部分来形成内部空腔。 剩余的Mo可用作电极之间的支撑结构。

公开(公告)号：US20130057557A1

公开(公告)日：2013-03-07

申请号：US13227246

申请日：2011-09-07

Applicant: Ravindra Vaman Shenoy ,  Philip Jason Stephanou ,  Ana Rangelova Londergan ,  Evgeni Petrovich Gousev

Inventor： Ravindra Vaman Shenoy ,  Philip Jason Stephanou ,  Ana Rangelova Londergan ,  Evgeni Petrovich Gousev

IPC: G06T1/00 ,  G06F1/16 ,  H01F27/30 ,  B32B15/00 ,  B32B3/00 ,  F28D15/04 ,  C23F1/02 ,  H01G4/30 ,  H01F5/00

CPC classification number: B81C1/0038 ,  B81B2203/0392 ,  B81C2201/0107 ,  B81C2201/0188 ,  B81C2201/038 ,  C23C18/1653 ,  C25D5/10 ,  C25D5/18 ,  C25D5/48 ,  C25D7/00 ,  Y02T50/6765 ,  Y10T428/12493 ,  Y10T428/24612

Abstract: This disclosure provides implementations of high surface area stacked layered metallic structures, devices, apparatus, systems, and related methods. A plurality of stacked layers on a substrate may be manufactured from a plating bath including a first metal and a second metal. A modulated plating current can deposit alternate first metal layers and alloy layers, the alloy layers including the first metal and the second metal. Gaps between the alloy layers can be formed by selectively etching some portions of the first metal layers to define a stacked layered structure. Stacked layered structures may be useful in applications to form capacitors, inductors, catalytic reactors, heat transfer tubes, non-linear springs, filters, batteries, and heavy metal purifiers.

Abstract translation: 本公开提供了高表面积堆叠层状金属结构，装置，装置，系统和相关方法的实施方式。 可以由包括第一金属和第二金属的电镀浴制造衬底上的多个层叠层。 调制的电镀电流可以沉积交替的第一金属层和合金层，合金层包括第一金属和第二金属。 可以通过选择性地蚀刻第一金属层的一些部分以限定堆叠的层状结构来形成合金层之间的间隙。 堆叠的分层结构可用于形成电容器，电感器，催化反应器，传热管，非线性弹簧，过滤器，电池和重金属净化器。