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公开(公告)号：CN1855466A
公开(公告)日：2006-11-01
申请号：CN200510120001.0
申请日：1997-07-10
Applicant: 富士通株式会社
IPC: H01L23/485
CPC classification number: H01L24/97 , H01L2224/16225 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/73204 , H01L2224/92125 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00
Abstract: 本发明提供了一种半导体装置，其特征是具备：在表面上形成有突出电极的半导体器件；在半导体器件的表面上形成的剩下上述突出电极的顶端部分来密封上述突出电极的树脂层；以及上述半导体器件的定位突起，上述突起形成在上述半导体器件的上述表面上，并具有从上述树脂层暴露的顶端部分。
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公开(公告)号：CN1271712C
公开(公告)日：2006-08-23
申请号：CN03103883.2
申请日：2003-02-14
Applicant: 富士通株式会社
CPC classification number: H01L24/48 , H01L23/3128 , H01L23/4334 , H01L23/49822 , H01L23/50 , H01L24/45 , H01L24/49 , H01L24/73 , H01L2224/0401 , H01L2224/05554 , H01L2224/05624 , H01L2224/06135 , H01L2224/16 , H01L2224/16225 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/4813 , H01L2224/48227 , H01L2224/4824 , H01L2224/48247 , H01L2224/48465 , H01L2224/48599 , H01L2224/48699 , H01L2224/49109 , H01L2224/4911 , H01L2224/4943 , H01L2224/73207 , H01L2224/73215 , H01L2224/73265 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/0105 , H01L2924/01057 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/10162 , H01L2924/1433 , H01L2924/15151 , H01L2924/15153 , H01L2924/15311 , H01L2924/1532 , H01L2924/181 , H01L2924/18165 , H01L2924/19041 , H01L2924/19042 , H01L2924/30107 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
Abstract: 一种半导体元件具有一个电路形成表面，其中电极端在该表面的外围部分排列。该半导体元件被模制树脂封装在对应于半导体元件的电极的位置具有开孔的基片上。该半导体元件被安装到所述基片上，处于电路形成表面面对该基片和电极端位于该开孔处的状态，并且与半导体元件的电路形成表面相反的背面从模制树脂暴露出来。由金属片所形成的散热部件被提供在与安装有半导体元件的表面相反的基片表面上。该散热部件的表面从模制树脂暴露出来。
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公开(公告)号：CN1728371A
公开(公告)日：2006-02-01
申请号：CN200510088554.2
申请日：2003-02-14
Applicant: 富士通株式会社
IPC: H01L23/48
CPC classification number: H01L24/48 , H01L23/3128 , H01L23/4334 , H01L23/49822 , H01L23/50 , H01L24/45 , H01L24/49 , H01L24/73 , H01L2224/0401 , H01L2224/05554 , H01L2224/05624 , H01L2224/06135 , H01L2224/16 , H01L2224/16225 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/4813 , H01L2224/48227 , H01L2224/4824 , H01L2224/48247 , H01L2224/48465 , H01L2224/48599 , H01L2224/48699 , H01L2224/49109 , H01L2224/4911 , H01L2224/4943 , H01L2224/73207 , H01L2224/73215 , H01L2224/73265 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/0105 , H01L2924/01057 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/10162 , H01L2924/1433 , H01L2924/15151 , H01L2924/15153 , H01L2924/15311 , H01L2924/1532 , H01L2924/181 , H01L2924/18165 , H01L2924/19041 , H01L2924/19042 , H01L2924/30107 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
Abstract: 一种半导体器件，其中包括：半导体元件，其具有设置在电路形成表面的外围部分上的第一电极、设置在该电路形成表面上形成第一电极的区域内侧的第二电极、以及连接在所述第一电极和所述第二电极之间的金属线；以及电连接到所述第一电极的外部连接端。
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公开(公告)号：CN1420555A
公开(公告)日：2003-05-28
申请号：CN02126233.0
申请日：1997-07-10
Applicant: 富士通株式会社
CPC classification number: H01L21/568 , B29C43/18 , B29C2043/3444 , B29C2043/3628 , H01L21/56 , H01L21/561 , H01L21/563 , H01L21/566 , H01L21/6835 , H01L23/24 , H01L23/3107 , H01L23/3114 , H01L23/3121 , H01L23/3128 , H01L23/49572 , H01L23/4985 , H01L24/27 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/97 , H01L25/0657 , H01L25/105 , H01L29/0657 , H01L2221/68345 , H01L2221/68377 , H01L2224/02371 , H01L2224/0401 , H01L2224/0556 , H01L2224/16225 , H01L2224/16235 , H01L2224/16237 , H01L2224/274 , H01L2224/29111 , H01L2224/32225 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/50 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/83101 , H01L2224/83102 , H01L2224/83191 , H01L2224/85001 , H01L2224/92125 , H01L2224/97 , H01L2225/06517 , H01L2225/0652 , H01L2225/06527 , H01L2225/06541 , H01L2225/06551 , H01L2225/06572 , H01L2225/06579 , H01L2225/06582 , H01L2225/06586 , H01L2225/06589 , H01L2225/1005 , H01L2225/1064 , H01L2225/107 , H01L2225/1082 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0133 , H01L2924/12042 , H01L2924/15153 , H01L2924/15165 , H01L2924/15173 , H01L2924/15174 , H01L2924/15192 , H01L2924/15311 , H01L2924/15312 , H01L2924/1532 , H01L2924/15331 , H01L2924/16195 , H01L2924/181 , H01L2924/18161 , H01L2924/3011 , H01L2924/3025 , H01L2924/3511 , H01L2224/85 , H01L2924/00 , H01L2924/01028 , H01L2924/3512 , H01L2224/81 , H01L2924/00012 , H01L2224/05552 , H01L2224/45015 , H01L2924/207
Abstract: 具备下述工序：树脂密封工序，用于把已形成的配设有突出电极12的多个半导体器件11的衬底16装设到模具20的空腔28内，接着向突出电极12的配设位置供给树脂35密封突出电极12，形成树脂层13；突出电极露出工序，用于使已被树脂层13覆盖的突出电极12的至少顶端部分从树脂层13中露出来；分离工序，用于使衬底16与树脂层13一起切断分离成各个半导体器件。
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公开(公告)号：CN100452376C
公开(公告)日：2009-01-14
申请号：CN200510120001.0
申请日：1997-07-10
Applicant: 富士通株式会社
IPC: H01L23/485
CPC classification number: H01L24/97 , H01L2224/16225 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/73204 , H01L2224/92125 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00
Abstract: 本发明提供了一种半导体装置，其特征是具备：在表面上形成有突出电极的半导体器件；在半导体器件的表面上形成的剩下上述突出电极的顶端部分来密封上述突出电极的树脂层；以及上述半导体器件的定位突起，上述突起形成在上述半导体器件的上述表面上，并具有从上述树脂层暴露的顶端部分。
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Patent Agency Ranking
公开(公告)号：CN1110846C
公开(公告)日：2003-06-04
申请号：CN97191078.2
申请日：1997-07-10
Applicant: 富士通株式会社
CPC classification number: H01L21/568 , B29C43/18 , B29C2043/3444 , B29C2043/3628 , H01L21/56 , H01L21/561 , H01L21/563 , H01L21/566 , H01L21/6835 , H01L23/24 , H01L23/3107 , H01L23/3114 , H01L23/3121 , H01L23/3128 , H01L23/49572 , H01L23/4985 , H01L24/27 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/97 , H01L25/0657 , H01L25/105 , H01L29/0657 , H01L2221/68345 , H01L2221/68377 , H01L2224/02371 , H01L2224/0401 , H01L2224/0556 , H01L2224/16225 , H01L2224/16235 , H01L2224/16237 , H01L2224/274 , H01L2224/29111 , H01L2224/32225 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/50 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/83101 , H01L2224/83102 , H01L2224/83191 , H01L2224/85001 , H01L2224/92125 , H01L2224/97 , H01L2225/06517 , H01L2225/0652 , H01L2225/06527 , H01L2225/06541 , H01L2225/06551 , H01L2225/06572 , H01L2225/06579 , H01L2225/06582 , H01L2225/06586 , H01L2225/06589 , H01L2225/1005 , H01L2225/1064 , H01L2225/107 , H01L2225/1082 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0133 , H01L2924/12042 , H01L2924/15153 , H01L2924/15165 , H01L2924/15173 , H01L2924/15174 , H01L2924/15192 , H01L2924/15311 , H01L2924/15312 , H01L2924/1532 , H01L2924/15331 , H01L2924/16195 , H01L2924/181 , H01L2924/18161 , H01L2924/3011 , H01L2924/3025 , H01L2924/3511 , H01L2224/85 , H01L2924/00 , H01L2924/01028 , H01L2924/3512 , H01L2224/81 , H01L2924/00012 , H01L2224/05552 , H01L2224/45015 , H01L2924/207
Abstract: 一种半导体装置的制造方法，具备下述工序：树脂密封工序，用于把已形成的配设有突出电极12的多个半导体器件11的衬底16装设到模具20的空腔28内，接着向突出电极12的配设位置供给树脂35密封突出电极12，形成树脂层13；突出电极露出工序，用于使已被树脂层13覆盖的突出电极12的至少顶端部分从树脂层13中露出来；分离工序，用于使衬底16与树脂层13一起切断分离成各个半导体器件。
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公开(公告)号：CN100428449C
公开(公告)日：2008-10-22
申请号：CN02126233.0
申请日：1997-07-10
Applicant: 富士通株式会社
CPC classification number: H01L21/568 , B29C43/18 , B29C2043/3444 , B29C2043/3628 , H01L21/56 , H01L21/561 , H01L21/563 , H01L21/566 , H01L21/6835 , H01L23/24 , H01L23/3107 , H01L23/3114 , H01L23/3121 , H01L23/3128 , H01L23/49572 , H01L23/4985 , H01L24/27 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/97 , H01L25/0657 , H01L25/105 , H01L29/0657 , H01L2221/68345 , H01L2221/68377 , H01L2224/02371 , H01L2224/0401 , H01L2224/0556 , H01L2224/16225 , H01L2224/16235 , H01L2224/16237 , H01L2224/274 , H01L2224/29111 , H01L2224/32225 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/50 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/83101 , H01L2224/83102 , H01L2224/83191 , H01L2224/85001 , H01L2224/92125 , H01L2224/97 , H01L2225/06517 , H01L2225/0652 , H01L2225/06527 , H01L2225/06541 , H01L2225/06551 , H01L2225/06572 , H01L2225/06579 , H01L2225/06582 , H01L2225/06586 , H01L2225/06589 , H01L2225/1005 , H01L2225/1064 , H01L2225/107 , H01L2225/1082 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0133 , H01L2924/12042 , H01L2924/15153 , H01L2924/15165 , H01L2924/15173 , H01L2924/15174 , H01L2924/15192 , H01L2924/15311 , H01L2924/15312 , H01L2924/1532 , H01L2924/15331 , H01L2924/16195 , H01L2924/181 , H01L2924/18161 , H01L2924/3011 , H01L2924/3025 , H01L2924/3511 , H01L2224/85 , H01L2924/00 , H01L2924/01028 , H01L2924/3512 , H01L2224/81 , H01L2924/00012 , H01L2224/05552 , H01L2224/45015 , H01L2924/207
Abstract: 提供了一种半导体装置，其特征在于包括：在半导体器件上形成的多个电极焊盘；在上述半导体器件上与上述电极焊盘分开形成的多个突出电极；在电极焊盘和突出电极之间选择性形成的互连图形，用来互连上述电极焊盘和上述突出电极；以及在上述半导体器件的表面上形成的树脂层，所述树脂层至少覆盖上述电极焊盘和上述互连图形，并密封住上述突出电极的除了顶端部分以外的其它部分，其中，上述树脂层和上述半导体器件各自的侧面形成有用划片机切割所形成的切面。
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公开(公告)号：CN1993979A
公开(公告)日：2007-07-04
申请号：CN200480043659.X
申请日：2004-07-28
Applicant: 富士通株式会社
CPC classification number: H04N5/2251 , H01L27/14618 , H01L2924/0002 , H04N5/2257 , H01L2924/00
Abstract: 摄像装置包括安装有摄像元件的壳体和与设在壳体上的外部连接端子接合的柔性基板，柔性基板沿着壳体(41)的各个面弯曲以便包围壳体(41)。由于弯曲柔性基板，施加在柔性基板上的负载由柔性基板的弯曲部分承受，从而负载难以传递到柔性基板与外部连接端子的接合部。并且，通过使用粘接剂等来固定壳体和柔性基板的一部分，应力不会向柔性基板与外部连接端子剥离的方向传递。另外，壳体由具备电磁波屏蔽材料的柔性基板覆盖。
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公开(公告)号：CN1420538A
公开(公告)日：2003-05-28
申请号：CN02126232.2
申请日：1997-07-10
Applicant: 富士通株式会社
CPC classification number: H01L21/568 , B29C43/18 , B29C2043/3444 , B29C2043/3628 , H01L21/56 , H01L21/561 , H01L21/563 , H01L21/566 , H01L21/6835 , H01L23/24 , H01L23/3107 , H01L23/3114 , H01L23/3121 , H01L23/3128 , H01L23/49572 , H01L23/4985 , H01L24/27 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/97 , H01L25/0657 , H01L25/105 , H01L29/0657 , H01L2221/68345 , H01L2221/68377 , H01L2224/02371 , H01L2224/0401 , H01L2224/0556 , H01L2224/16225 , H01L2224/16235 , H01L2224/16237 , H01L2224/274 , H01L2224/29111 , H01L2224/32225 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/50 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/83101 , H01L2224/83102 , H01L2224/83191 , H01L2224/85001 , H01L2224/92125 , H01L2224/97 , H01L2225/06517 , H01L2225/0652 , H01L2225/06527 , H01L2225/06541 , H01L2225/06551 , H01L2225/06572 , H01L2225/06579 , H01L2225/06582 , H01L2225/06586 , H01L2225/06589 , H01L2225/1005 , H01L2225/1064 , H01L2225/107 , H01L2225/1082 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0133 , H01L2924/12042 , H01L2924/15153 , H01L2924/15165 , H01L2924/15173 , H01L2924/15174 , H01L2924/15192 , H01L2924/15311 , H01L2924/15312 , H01L2924/1532 , H01L2924/15331 , H01L2924/16195 , H01L2924/181 , H01L2924/18161 , H01L2924/3011 , H01L2924/3025 , H01L2924/3511 , H01L2224/85 , H01L2924/00 , H01L2924/01028 , H01L2924/3512 , H01L2224/81 , H01L2924/00012 , H01L2224/05552 , H01L2224/45015 , H01L2924/207
Abstract: 具备下述工序：树脂密封工序，用于把已形成的配设有突出电极12的多个半导体器件11的衬底16装设到模具20的空腔28内，接着向突出电极12的配设位置供给树脂35密封突出电极12，形成树脂层13；突出电极露出工序，用于使已被树脂层13覆盖的突出电极12的至少顶端部分从树脂层13中露出来；分离工序，用于使衬底16与树脂层13一起切断分离成各个半导体器件。
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公开(公告)号：CN1783470A
公开(公告)日：2006-06-07
申请号：CN200510118900.7
申请日：1997-07-10
Applicant: 富士通株式会社
IPC: H01L23/485
CPC classification number: H01L24/97 , H01L2224/16225 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/73204 , H01L2224/92125 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00
Abstract: 本发明提供了一种半导体装置，其特征是具备：在表面上形成有突出电极的半导体器件；以及形成在半导体器件的表面上、密封住除了突出电极的顶端部分的上述突出电极的树脂层；上述突出电极具有核心部分和在上述突出的核心部分表面上形成的导电膜。
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