公开(公告)号：KR1020080056655A

公开(公告)日：2008-06-23

申请号：KR1020070132019

申请日：2007-12-17

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 가와노히사시 ,  기따노쥰이찌 ,  고스기히또시 ,  혼따께고오이찌 ,  에노모또마사시

IPC: H01L21/027 ,  H01L21/02 ,  H01L21/304 ,  G06F19/00

CPC classification number: G03F7/162 ,  G03F7/168 ,  G03F7/3021 ,  G03F7/11 ,  G03F7/70341

Abstract: A coating-developing apparatus, a method for forming a pattern, and a computer readable storage medium are provided to prevent a residual liquid-drop or a trace of the residual liquid-drop by evaporating a liquid attached to a substrate. A process unit has plural process units for performing a series of processes for a resist application and development. An interface unit is installed between the process unit and an immersion exposure apparatus. A dry process unit(DRY1) is installed on the interface unit and dries a substrate after an immersion exposure process. The dry process unit includes a process container(40), a substrate mounting member(41), a temperature controlled gas supply device(42), and an exhaust device(43). The process container accommodates the substrate. The substrate mounting member mounts the substrate in the process container. The temperature controlled gas supply device supplies temperature controlled gas into the process container. The exhaust device exhausts the process container. When the substrate is mounted on the substrate mounting member in the process container, the substrate is dried by exhausting gas through the exhaust device and by supplying gas through the temperature controlled gas supply device.

Abstract translation: 提供涂布显影装置，形成图案的方法和计算机可读存储介质，以通过蒸发附着在基板上的液体来防止残留的液滴或痕迹的残留液滴。 处理单元具有用于执行用于抗蚀剂应用和开发的一系列处理的多个处理单元。 接口单元安装在处理单元和浸没曝光设备之间。 干式处理单元（DRY1）安装在接口单元上，并在浸渍曝光过程后干燥基板。 干燥处理单元包括处理容器（40），基板安装构件（41），温度控制气体供给装置（42）和排气装置（43）。 处理容器容纳衬底。 基板安装部件将基板安装在处理容器中。 温度控制气体供应装置将温度控制的气体供应到处理容器中。 排气装置排出处理容器。 当基板安装在处理容器中的基板安装构件上时，通过排气装置排出气体并通过供应气体通过温度控制气体供应装置来干燥基板。

公开(公告)号：KR101541933B1

公开(公告)日：2015-08-04

申请号：KR1020100104990

申请日：2010-10-27

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 야마다요시아끼 ,  다나까게이이찌 ,  고스기히또시

IPC: H01L21/027

CPC classification number: G03F7/38

Abstract: 본발명의과제는기판상의 EUV용레지스트막에레지스트패턴을형성할때에기판처리의처리량을향상시키는것이다. PEB 장치(83)는제1 열판(140)과제2 열판(170)을갖고있다. 웨이퍼(W) 상의 EUV용레지스트막의노광처리후이며현상처리전에있어서, PEB 장치(83)에서는, 우선제1 열판(140)에의해제1 가열온도로웨이퍼(W)를가열한다. 이제1 열판(140)에의한가열시간은 10초이상또한 30초이하이다. 그후, 제2 열판(170)에의해제1 가열온도보다낮은제2 가열온도로웨이퍼(W)를가열한다. 이때, 제1 가열온도와제2 가열온도의온도차는 20℃이상또한 60℃이하이다.

Abstract translation: PEB单元具有第一加热板和第二加热板。 在晶片上并且在显影处理之前用于EUV的抗蚀剂膜的曝光处理之后，PEB单元在第一加热温度下通过第一加热板加热晶片。 通过第一加热板的加热时间不小于10秒且不超过30秒。 此后，PEB单元在低于第一加热温度的第二加热温度下通过第二加热板加热晶片。 第一加热温度和第二加热温度之间的温差不小于20℃且不大于60℃。

公开(公告)号：KR101339567B1

公开(公告)日：2013-12-10

申请号：KR1020070132019

申请日：2007-12-17

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 가와노히사시 ,  기따노쥰이찌 ,  고스기히또시 ,  혼따께고오이찌 ,  에노모또마사시

IPC: H01L21/027 ,  H01L21/02 ,  H01L21/304 ,  G06F19/00

CPC classification number: G03F7/162 ,  G03F7/168 ,  G03F7/3021

Abstract: 본 발명의 과제는 잔류 액적 또는 잔류 액적의 흔적의 발생을 방지하는 것이 가능한 도포ㆍ현상 장치를 제공하는 것이다.
도포ㆍ현상 장치(2)는, 레지스트 도포 및 현상을 위한 일련의 처리를 행하는 처리부와, 처리부와 액침 노광 장치와의 사이에 설치된 인터페이스부와, 인터페이스부에 설치되고 액침 노광 처리 직후의 웨이퍼(W)를 건조시키는 제1 건조 유닛(DRY1)을 구비하고, 제1 건조 유닛(DRY1)은, 웨이퍼(W)를 수용하는 챔버(40)와, 챔버(40) 내에서 웨이퍼(W)를 적재하는 적재부(41)와, 챔버(40) 내에 온조 에어를 공급하는 온조 에어 공급 기구(42)와, 챔버(40)를 배기하는 배기 기구(43)를 구비하고, 챔버(40) 내의 적재부(41)에 웨이퍼(W)를 적재한 상태에서, 배기 기구(43)에 의해 챔버(40) 내를 배기하면서, 온조 에어 공급 기구(42)에 의해 온조 에어를 공급하여 웨이퍼(W)를 건조시킨다.
도포ㆍ현상 장치, 건조 유닛, 챔버, 웨이퍼, 배기 기구

公开(公告)号：KR1020110066081A

公开(公告)日：2011-06-16

申请号：KR1020100107961

申请日：2010-11-02

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 다나까게이이찌 ,  야마다요시아끼 ,  고스기히또시

IPC: G03F7/26 ,  H01L21/027

CPC classification number: G03F7/3021 ,  G03F7/265 ,  G03F1/22 ,  G03F1/60 ,  G03F7/32 ,  G03F7/70033 ,  H01L21/0275

Abstract: PURPOSE: A developing treatment method for a substrate, and a computer memory device for performing thereof are provided to properly produce a resist pattern on a resist film for EUV on the substrate. CONSTITUTION: A developing treatment method for a substrate comprises a step of supplying a developer to the substrate for developing a resist film for EUV. The temperature of the developer is 5~23deg C. The developing treatment is performed for 10~30second. The concentration of the developer is less than 2.38mass%.

Abstract translation: 目的：提供一种用于基板的显影处理方法和用于执行其的计算机存储装置，以在基板上的EUV抗蚀剂膜上适当地制造抗蚀剂图案。 构成：用于衬底的显影处理方法包括将显影剂供应到用于显影用于EUV的抗蚀剂膜的衬底的步骤。 显影剂的温度为5〜23℃。显影处理进行10〜30秒。 显影剂的浓度小于2.38质量％。

公开(公告)号：KR1020110066079A

公开(公告)日：2011-06-16

申请号：KR1020100104990

申请日：2010-10-27

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 야마다요시아끼 ,  다나까게이이찌 ,  고스기히또시

IPC: H01L21/027

CPC classification number: G03F7/38 ,  H01L21/0275 ,  G03F1/60 ,  G03F7/70033

Abstract: PURPOSE: A method of process a substrate, a computer memory medium, and a substrate processing system are provided to heat a wafer by a second temperature lower than a first temperature. CONSTITUTION: A first heating portion(120) comprises a cover and a thermal plate receiving part(131) forming a first reaction chamber. The thermal plate receiving part includes a holding support member(141) of a ring shape and a support ring. A heater(143) which is heated by power is built in the first thermal plate A second heating unit(120) comprises a cover and a thermal plate receiving part(161) forming a second reaction chamber.

Abstract translation: 目的：提供一种处理衬底，计算机存储介质和衬底处理系统的方法，以将晶片加热到低于第一温度的第二温度。 构成：第一加热部分（120）包括盖和形成第一反应室的热板接收部分（131）。 热板接收部分包括环形的保持支撑构件（141）和支撑环。 通过动力加热的加热器（143）被构建在第一热板A中。第二加热单元（120）包括盖和形成第二反应室的热板容纳部（161）。

公开(公告)号：KR1020080013774A

公开(公告)日：2008-02-13

申请号：KR1020070078890

申请日：2007-08-07

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 야마모또다로오 ,  고스기히또시 ,  야마다요시아끼 ,  사이가야스히또

IPC: H01L21/027

CPC classification number: G03F7/38 ,  G03F7/2041 ,  G03F7/70341 ,  H01L21/0274

Abstract: A method and an apparatus for fabricating a pattern are provided to uniformly and stably form a resist pattern using a hydrophilicity instrument by supplying chemicals to a surface of a substrate on which a resist layer and a protective layer are formed before developing an exposed pattern. A coating process unit(13) forms a resist layer on a surface of the substrate, or forms a resist layer and a protective layer on the surface of the substrate in turn. An immersion exposing unit(14) immerses and exposes the substrate on which the resist layer and/or the protective layer to form a certain exposed pattern on the resist layer. A developing process unit(12) develops the exposed pattern by a developing solution to form a certain resist pattern. After the immersion exposing unit performs the exposing process, a hydrophilicity instrument performs a hydrophilicity process on the substrate enough to wet a surface of the resist layer or the protective layer with the developing solution before the developing process unit performs the developing process.

Abstract translation: 提供一种用于制造图案的方法和装置，以在显影曝光图案之前，使用亲水性仪器，通过向其上形成有抗蚀剂层和保护层的基板的表面供给化学品来均匀且稳定地形成抗蚀剂图案。 涂布处理单元（13）在基板的表面上形成抗蚀剂层，或者在基板的表面上依次形成抗蚀剂层和保护层。 浸没曝光单元（14）将抗蚀剂层和/或保护层的基板浸入并曝光，以在抗蚀剂层上形成一定的曝光图案。 显影处理单元（12）通过显影溶液显影曝光图案以形成一定的抗蚀剂图案。 在浸渍曝光单元执行曝光处理之后，亲水性仪器在显影处理单元执行显影处理之前，对基底进行亲水处理，足以使显影溶液的表面润湿抗蚀剂层或保护层。