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公开(公告)号：KR102237508B1
公开(公告)日：2021-04-06
申请号：KR1020140073526
申请日：2014-06-17
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/302 , H01L21/08 , H01L21/02
Abstract: 소수화처리된기판의표면을제전하는것이가능한액 처리방법등을제공한다. 액처리가행해진회전하는기판(W)의표면에소수화액을공급하여, 상기기판의표면을소수화하고, 이소수화된기판(W)의표면에, 알칼리성의린스액을공급하여린스세정을행함으로써, 액처리에따라대전한기판(W)의제전을행한다.
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公开(公告)号：KR1020170017810A
公开(公告)日：2017-02-15
申请号：KR1020160099920
申请日：2016-08-05
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/324 , H01L21/67 , H01L21/60 , H01L21/02
CPC classification number: H01L21/0206 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/67109 , H01L21/6719 , H01L21/67248
Abstract: 본발명은, 요철패턴이표면에형성된기판으로부터, 요철패턴의오목부내에충전된, 승화성물질및 불순물을함유하는고형물을제거하고, 기판으로부터일단제거된승화성물질및 불순물의기판에의재부착을방지하는것을목적으로한다. 기판(W)의오목부내에충전된고형물이, 처리실(52) 내의분위기압력하, 제1 온도이상의온도에서승화하는고체상태의승화성물질과, 처리실(52) 내의분위기압력하, 제1 온도보다높은제2 온도이상의온도에서증발하는불순물을함유할때, 배기부(62) 및배기부(63) 중한쪽또는양쪽에의해처리실(52) 내의분위기를배출하면서, 기판가열부(57)에의해처리실(52) 내에배치된기판(W)을제2 온도이상의온도까지가열한다.
Abstract translation: 为了从形成在基板的表面上的具有凹凸图案的基板上除去填充有凹凸图案的凹部的固体材料，并且通过使可升华物质溶液中的溶剂蒸发而形成 含有在等于或高于第一温度的温度升华的升华物质和在等于或高于第一温度的第二温度下蒸发的杂质，本发明提供了一种基板处理装置 以及将基板加热到等于或高于第二温度的温度的基板处理方法。
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公开(公告)号：KR1020170007122A
公开(公告)日：2017-01-18
申请号：KR1020160082257
申请日：2016-06-30
Applicant: 도쿄엘렉트론가부시키가이샤
CPC classification number: H01L21/02101 , H01L21/02057 , H01L21/67017 , H01L21/67028 , H01L21/6708 , H01L21/67248
Abstract: 본발명은초임계처리중에사용해야할 불소함유유기용제의종류를낮게억제하는것을목적으로한다. 기판처리방법은, 액처리유닛(2)의외측챔버(21) 내에있어서, 웨이퍼(W) 에대해불소를함유하지않는유기용제를공급하는공정과, 유기용제와상온에서용해되지않으나용해온도이상에서용해되는건조방지용의불소함유유기용제를공급하는공정을포함한다. 유기용제와불소함유유기용제는가열되어용해되고, 유기용제가불소함유유기용제로치환된다.
Abstract translation: 公开了一种基板处理方法，包括：向工件供给包含无氟有机溶剂的第一溶剂; 在常温下供给含有与第一溶剂不溶解的含氟有机溶剂的第二溶剂，并在高于常温的温度下与第一溶剂溶解; 并用第二溶剂代替第一溶剂，同时通过将第一溶剂和第二溶剂加热至第一溶剂和第二溶剂至溶解温度或更高。
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公开(公告)号：KR1020140000158A
公开(公告)日：2014-01-02
申请号：KR1020130070236
申请日：2013-06-19
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/311 , H01L21/306
CPC classification number: H01L21/02057 , G03F7/423 , H01L21/31133 , H01L21/67051
Abstract: The purpose of the present invention is to smoothly remove a target layer without damaging a lower layer of the substrate. The substrate processing device (1) removes the target layer by supplying a mixture of sulfuric acid and hydrogen peroxide on a substrate (3) in which the target layer is formed on the surface of the lower layer. The substrate processing device (1) includes a substrate processing chamber (16) for processing the substrate (3), a substrate maintaining member (12) installed at the substrate processing chamber (16) and formed to maintain the substrate (3), a mixture supply member (13) for supplying the mixture of the sulfuric acid and hydrogen peroxide on the substrate maintained by the substrate maintaining member (12) at temperatures and a mixing ratio of the hydrogen peroxide which does not damage the lower layer, and an OH group supply member (14) for supplying fluid containing of an OH group on the substrate (3). The OH group supply member (14) supplies the fluid containing of the OH group which does not damage the lower layer when the mixture and the OH group are mixed in the substrate (3).
Abstract translation: 本发明的目的是平滑地去除目标层而不损坏基底的下层。 基板处理装置（1）通过在下层的表面上形成有目标层的基板（3）上供给硫酸和过氧化氢的混合物来除去目标层。 基板处理装置（1）包括用于处理基板（3）的基板处理室（16），安装在基板处理室（16）上并形成为保持基板（3）的基板保持部件 混合物供应构件（13），用于在不损坏下层的过氧化氢的温度和混合比例下将硫酸和过氧化氢的混合物供给到由基板保持构件（12）保持的基板上，以及OH 用于在衬底（3）上提供含有OH基团的流体的组供应构件（14）。 当混合物和OH基团混合在基材（3）中时，OH基团供给部件（14）供给含有不损坏下层的OH基团的流体。
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公开(公告)号：KR1020080056655A
公开(公告)日：2008-06-23
申请号：KR1020070132019
申请日：2007-12-17
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/027 , H01L21/02 , H01L21/304 , G06F19/00
CPC classification number: G03F7/162 , G03F7/168 , G03F7/3021 , G03F7/11 , G03F7/70341
Abstract: A coating-developing apparatus, a method for forming a pattern, and a computer readable storage medium are provided to prevent a residual liquid-drop or a trace of the residual liquid-drop by evaporating a liquid attached to a substrate. A process unit has plural process units for performing a series of processes for a resist application and development. An interface unit is installed between the process unit and an immersion exposure apparatus. A dry process unit(DRY1) is installed on the interface unit and dries a substrate after an immersion exposure process. The dry process unit includes a process container(40), a substrate mounting member(41), a temperature controlled gas supply device(42), and an exhaust device(43). The process container accommodates the substrate. The substrate mounting member mounts the substrate in the process container. The temperature controlled gas supply device supplies temperature controlled gas into the process container. The exhaust device exhausts the process container. When the substrate is mounted on the substrate mounting member in the process container, the substrate is dried by exhausting gas through the exhaust device and by supplying gas through the temperature controlled gas supply device.
Abstract translation: 提供涂布显影装置，形成图案的方法和计算机可读存储介质，以通过蒸发附着在基板上的液体来防止残留的液滴或痕迹的残留液滴。 处理单元具有用于执行用于抗蚀剂应用和开发的一系列处理的多个处理单元。 接口单元安装在处理单元和浸没曝光设备之间。 干式处理单元（DRY1）安装在接口单元上，并在浸渍曝光过程后干燥基板。 干燥处理单元包括处理容器（40），基板安装构件（41），温度控制气体供给装置（42）和排气装置（43）。 处理容器容纳衬底。 基板安装部件将基板安装在处理容器中。 温度控制气体供应装置将温度控制的气体供应到处理容器中。 排气装置排出处理容器。 当基板安装在处理容器中的基板安装构件上时，通过排气装置排出气体并通过供应气体通过温度控制气体供应装置来干燥基板。
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Patent Agency Ranking
公开(公告)号：KR102255939B1
公开(公告)日：2021-05-24
申请号：KR1020140095793
申请日：2014-07-28
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/306 , H01L21/02
Abstract: 본원에는, 기판표면전체에걸쳐실질적으로일정한온도가유지되도록복수의화학유체로기판을처리하는화학유체처리장치및 화학유체처리방법이기재되어있다. 상기화학유체처리장치는, 기판의앞면에제1 온도의제1 화학유체를공급하는기판상의토출노즐과, 기판의앞면또는뒷면에상기제1 온도보다높은제2 온도의제2 화학유체를공급하는기판의반경방향으로배향된바아노즐을포함하고, 상기바아노즐은기판의앞면또는뒷면에있어서기판의중앙으로부터서로다른거리를두고위치해있는복수의접촉장소에제2 화학유체를토출하는복수의출구를포함한다.
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公开(公告)号：KR1020170077042A
公开(公告)日：2017-07-05
申请号：KR1020160174538
申请日：2016-12-20
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/02 , H01L21/67 , H01L21/311 , H01L21/324
CPC classification number: H01L21/3065 , H01L21/02057 , H01L21/02082 , H01L21/30604 , H01L21/31111 , H01L21/31116 , H01L21/324 , H01L21/67028 , H01L21/6704 , H01L21/67069 , H01L21/67075 , H01L21/6708
Abstract: 도괴된패턴을복원한다. 기판처리방법은, 복수의볼록부(2)를갖는패턴이표면에형성된기판에, 처리액을공급하는액 처리공정과, 상기기판의표면에존재하는상기처리액을제거하고, 기판을건조시키는건조공정과, 상기건조공정후, 서로인접하는상기볼록부의접합부(2a)를분리시키는분리공정을구비한다.
Abstract translation: 还原剽窃的模式。 该基板处理方法包括：液体处理步骤，将处理液供给至具有在其表面上形成有多个突起（2）的图案的基板;除去存在于基板表面上的处理液的步骤; 以及分离步骤，在干燥步骤之后分离彼此相邻的凸起部分的接合部分2a。
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公开(公告)号：KR101704843B1
公开(公告)日：2017-02-08
申请号：KR1020120041386
申请日：2012-04-20
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/027
Abstract: 기판에도포액을도포해서도포막을형성하고, 또한상기도포막을가열하는처리에필요로하는시간을짧게할 수있는기술을제공하는것. 기판의보유지지부와, 기판에도포액을공급하는노즐과, 기판전체에도포막을형성하기위해, 상기노즐에대하여보유지지부를상대적으로이동시키는이동기구와, 상기보유지지부에보유지지된기판을향해서전자파를조사하고, 당해도포막에포함되는분자가서로결합하는온도로상기도포막전체를가열하기위한전자파조사부를구비하도록도포장치를구성한다. 도포막의형성후, 가열처리를행하기위해서기판을이동시킬필요가없으므로, 처리에필요로하는시간을짧게해, 처리량의향상을도모할수 있다.
Abstract translation: 要解决的问题：提供一种通过向基板施加涂布溶液来形成涂布膜的技术，并且可以减少涂布膜的热处理所需的时间。解决方案：一种涂布装置，包括：保持部件， 基质; 喷嘴，用于向所述基板供应涂布溶液; 移动机构，其使保持部相对于喷嘴移动，以在整个基板上形成涂布膜; 以及电磁波照射部，其向保持部保持的基板照射电磁波，并将整个涂布膜加热至涂布膜中所含的分子的温度彼此接合。 在形成涂布膜之后，为了进行热处理，不需要移动基板。 这减少了处理所需的时间，从而提高了产量。
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公开(公告)号：KR1020130000340A
公开(公告)日：2013-01-02
申请号：KR1020120066003
申请日：2012-06-20
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/027 , H01L21/324
CPC classification number: H01L21/67115 , H05B3/0033 , H01L21/0274 , H01L21/3247
Abstract: PURPOSE: A heating treatment apparatus and a heat treating method are provided to rapidly heat a substrate by using a light emitting diode as a heating source. CONSTITUTION: A substrate(W) is horizontally supported. The substrate is heated by a heating source using a light emitting diode. Radiation light having the light emitting diode is irradiated on a substrate material. An arrangement plate(2) faces the heating source while the light emitting diode is in off state. A cooling part cools the substrate by using the arrangement plate. [Reference numerals] (a) Incoming; (A3,A2,A1) Cooling water OFF; (b) Transmitting; (BB) Cooling water ON; (c) Heating; (C1,C2,C3,C4) Elevating pin; (d) Cooling; (D1,D2) Arrangement plate; (E1,E2,E3,E4) LED module; (FF) Cooling water
Abstract translation: 目的：提供一种加热处理装置和热处理方法，通过使用发光二极管作为加热源来快速加热基板。 构成：水平支撑衬底（W）。 基板通过使用发光二极管的加热源加热。 具有发光二极管的放射线照射在基板材料上。 当发光二极管处于关闭状态时，布置板（2）面向加热源。 冷却部使用排列板冷却基板。 （附图标记）（a）传入; （A3，A2，A1）冷却水关闭; （b）传送; （BB）冷却水打开; （c）加热; （C1，C2，C3，C4）升降销; （d）冷却; （D1，D2）排列板; （E1，E2，E3，E4）LED模块; （FF）冷却水
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公开(公告)号：KR1020120120485A
公开(公告)日：2012-11-01
申请号：KR1020120041386
申请日：2012-04-20
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/027
CPC classification number: H01L21/0273 , B05C5/02 , B05D1/26 , G03F7/162 , H01L21/67706
Abstract: PURPOSE: A coating apparatus, a coating method, and a storage medium are provided to reduce processing time and quantity by not moving a substrate for a heating process after a coating layer is formed. CONSTITUTION: A spin chuck(21) horizontally holds a wafer(W) by vacuum absorption. A guide ring(23) is installed outside the spin chuck to guide a liquid discharge. An air supply port(14) and a fan filter unit(15) are installed on the upper side of a housing(11). A first exhaust port(16) is installed in the housing. A second exhaust port(26) is installed in the inner region of the lower side of a cup(24). [Reference numerals] (30) Lighting controller; (6) Control unit; (AA) Water supply; (BB) Drainage; (CC) Water supply; (DD) Drainage
Abstract translation: 目的：提供涂布装置，涂布方法和存储介质，以在形成涂层之后通过不移动用于加热工艺的基板来减少加工时间和量。 构成：旋转卡盘（21）通过真空吸附水平地保持晶片（W）。 引导环（23）安装在旋转卡盘外部以引导液体排出。 空气供给口（14）和风扇过滤器单元（15）安装在壳体（11）的上侧。 第一排气口（16）安装在壳体中。 第二排气口（26）安装在杯（24）的下侧的内部区域中。 （附图标记）（30）照明控制器; （6）控制单元; （AA）供水; （BB）排水; （CC）供水; （DD）排水
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