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公开(公告)号：KR1020110132214A
公开(公告)日：2011-12-07
申请号：KR1020110029148
申请日：2011-03-31
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/027 , B05B15/00 , B05C9/10
CPC classification number: H01L21/0273 , B05B15/16 , B05B15/20 , B05C9/10 , G03F7/16 , H01L21/0274
Abstract: PURPOSE: A hydrophobic treatment method and apparatus are provided to secure stable and high hydrophobic property using hexamethyl disilazane gas as carrier gas of H2O. CONSTITUTION: A reaction accelerator which accelerates the hydrophobic of a substrate is provided to the substrate. The substrate which is carried in the inner side of a treatment basin(30) is heated. The steam vapor of the reaction accelerator is adsorbed on the surface of the substrate. Hydrophobic treatment gas is provided to the surface of the substrate. The reaction of silicon of the hydrophobic treatment gas and oxygen of the surface of the substrate is accelerated by the reaction accelerator.
Abstract translation: 目的：提供使用六甲基二硅氮烷作为H 2载体的疏水性处理方法和装置，以确保稳定和高疏水性。 构成：将加速基材的疏水性的反应促进剂提供给基材。 载置在处理池（30）的内侧的基板被加热。 反应促进剂的蒸气蒸气被吸附在基材的表面上。 疏水性处理气体被提供到基底的表面。 疏水性处理气体的硅与基板表面的氧的反应被反应促进剂加速。
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公开(公告)号：KR101692082B1
公开(公告)日：2017-01-02
申请号：KR1020110029148
申请日：2011-03-31
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/027 , B05B15/00 , B05C9/10
Abstract: 본발명의과제는안정적이고높은소수성을확보할수 있는소수화처리방법및 소수화처리장치를제공하는것이다. 처리용기내에서, 웨이퍼(W)에 HMDS 가스를공급하고, 상기웨이퍼의표면에 -O(CH)로이루어지는소수기를생성하는소수화처리에있어서, 상기소수화를촉진시키는반응촉진제로서수증기를웨이퍼(W)에공급하는공정과, 상기처리용기내로반입된웨이퍼(W)를가열하는공정과, 가열된웨이퍼(W)의표면에상기수증기가흡착되어있는상태에서, 당해웨이퍼(W)의표면에상기 HMD 가스를공급하는공정을실시한다. 상기수증기에의해, HMDS 소수화처리가스의규소와, 기판표면의산소의반응이촉진되어, 안정적이고높은소수성이얻어진다.
Abstract translation: 要解决的问题：提供疏水性处理方法和能够稳定地确保高疏水性的疏水性处理装置。解决方案：在用于在处理容器中供给晶片W与HMDS气体进行疏水处理以产生疏水基团，包括 -O（CH），晶片W供给蒸汽作为加速疏水化的反应促进剂的工序，加工在处理容器中的晶片W的加工过程以及供给HMD的工序 执行在加热的晶片W的表面上吸附蒸汽的状态下的晶片W的表面的气体。 蒸汽加速HMDS疏水性处理气体中的硅与基材表面上的氧之间的反应，从而稳定地实现高疏水性。
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