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    실리콘산화막을 형성하는 방법 및 장치
    6.
    发明公开
    실리콘산화막을 형성하는 방법 및 장치 有权
    形成二氧化硅膜的方法及其实施方法

    公开(公告)号：KR1020060113880A

    公开(公告)日：2006-11-03

    申请号：KR1020060104509

    申请日：2006-10-26

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 다카하시유타카 ,  가토히토시 ,  구마가이다케시 ,  이시이가쓰토시 ,  미우라가즈토시 ,  도하라아쓰시 ,  후지타요시유키

    IPC: H01L21/205

    CPC classification number: H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/3185

    Abstract: A method and an apparatus for forming a silicon oxide film are provided to increase uniformity of a film thickness of an oxide film by performing a dry oxidation process on an object to be treated. An apparatus for forming a silicon oxide film includes a reaction chamber(302), a reaction chamber heater(312), a reaction chamber pressure adjuster, a first supply unit(313), a second supply unit(314), a gas heater(315), and a controller(321). The reaction chamber receives an object to be treated. The reaction chamber heater heats the reaction chamber up to a predetermined temperature. The reaction chamber pressure adjuster adjusts a pressure of the reaction chamber to a predetermined value. The first supply unit supplies silane-based gas into the reaction chamber. The second supply unit supplies N2O into the reaction chamber. The gas heater is arranged on the second supply unit and heats up the N2O up to a predetermined temperature. The controller heats up the N2O inside the reaction chamber to a temperature of 700‹C.

    Abstract translation: 提供一种用于形成氧化硅膜的方法和装置，以通过对被处理物进行干式氧化处理来提高氧化膜的膜厚均匀性。 用于形成氧化硅膜的装置包括反应室（302），反应室加热器（312），反应室压力调节器，第一供应单元（313），第二供应单元（314），气体加热器 315）和控制器（321）。 反应室接收待处理物体。 反应室加热器将反应室加热至预定温度。 反应室压力调节器将反应室的压力调节到预定值。 第一供应单元将硅烷基气体供应到反应室中。 第二供应单元向反应室供应N2O。 气体加热器布置在第二供应单元上，并将N2O加热至预定温度。 控制器将反应室内的N2O加热至700℃的温度。

    실리콘질화막을 형성하는 방법 및 장치
    7.
    发明公开
    실리콘질화막을 형성하는 방법 및 장치 有权
    形成硅酸盐膜的方法及其实施方法

    公开(公告)号：KR1020060113879A

    公开(公告)日：2006-11-03

    申请号：KR1020060104505

    申请日：2006-10-26

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 다카하시유타카 ,  가토히토시 ,  구마가이다케시 ,  이시이가쓰토시 ,  미우라가즈토시 ,  도하라아쓰시 ,  후지타요시유키

    IPC: H01L21/205

    CPC classification number: H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/3185

    Abstract: A method and an apparatus for forming a silicon nitride film are provided to increase uniformity of a film thickness of an oxide film by forming the silicon nitride film at a low temperature. An apparatus of forming a silicon nitride film includes a reaction chamber(202), a reaction chamber heater(212), a reaction chamber pressure adjuster, a first supply unit(213), a second supply unit(214), a gas heater(215), and a controller(221). The reaction chamber receives an object to be treated. The reaction chamber heater heats the reaction chamber up to a predetermined temperature. The reaction chamber pressure adjuster adjusts a pressure of the reaction chamber to a predetermined value. The first supply unit supplies silane-based gas into the reaction chamber. The second supply unit supplies trimethylamine into the reaction chamber. The gas heater is arranged on the second supply unit and heats up the trimethylamine up to a predetermined temperature. The controller heats up the trimethylamine inside the reaction chamber to a temperature for generating nitrogen.

    Abstract translation: 提供了一种用于形成氮化硅膜的方法和装置，以通过在低温下形成氮化硅膜来提高氧化膜的膜厚度的均匀性。 形成氮化硅膜的装置包括反应室（202），反应室加热器（212），反应室压力调节器，第一供应单元（213），第二供应单元（214），气体加热器 215）和控制器（221）。 反应室接收待处理物体。 反应室加热器将反应室加热至预定温度。 反应室压力调节器将反应室的压力调节到预定值。 第一供应单元将硅烷基气体供应到反应室中。 第二供应单元向反应室供应三甲胺。 气体加热器布置在第二供应单元上，并将三甲胺加热至预定温度。 控制器将反应室内的三甲胺加热至产生氮气的温度。

    실리콘산화막을 형성하는 방법 및 장치
    8.
    发明公开
    실리콘산화막을 형성하는 방법 및 장치 有权
    形成二氧化硅膜的方法及其实施方法

    公开(公告)号：KR1020060113878A

    公开(公告)日：2006-11-03

    申请号：KR1020060104499

    申请日：2006-10-26

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 다카하시유타카 ,  가토히토시 ,  구마가이다케시 ,  이시이가쓰토시 ,  미우라가즈토시 ,  도하라아쓰시 ,  후지타요시유키

    IPC: H01L21/205

    CPC classification number: H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/3185

    Abstract: A method and an apparatus of forming a silicon oxide film are provided to increase a film forming speed by reducing a thickness of a nitride film and forming the nitride film at a low temperature. An apparatus for forming a silicon oxide film includes a reaction chamber(131), a reaction chamber heater(132), a supply unit(105), and a gas heater(102). The reaction chamber receives an object to be treated. A silicon layer is formed at least on a surface of the object to be treated. The reaction chamber heater raises a temperature of the reaction chamber to a predetermined temperature. The supply unit supplies gas, which is made of hydrogen and chlorine, and process gas, which contains oxygen, into the reaction chamber. The gas heater is arranged on the supply unit and heats up the process gas before the process gas is supplied into the reaction chamber, to generate humidity.

    Abstract translation: 提供一种形成氧化硅膜的方法和装置，以通过减小氮化物膜的厚度并在低温下形成氮化物膜来提高成膜速度。 用于形成氧化硅膜的装置包括反应室（131），反应室加热器（132），供应单元（105）和气体加热器（102）。 反应室接收待处理物体。 至少在待处理物体的表面上形成硅层。 反应室加热器将反应室的温度升高到预定温度。 供应单元将由氢和氯制成的气体以及含氧的处理气体供入反应室。 气体加热器布置在供应单元上，并且在将工艺气体供应到反应室中之前加热处理气体，以产生湿度。

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