公开(公告)号：KR100448112B1

公开(公告)日：2004-09-10

申请号：KR1020017005471

申请日：2000-08-30

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 신리키히로시 ,  마쓰모토겐지

IPC: H01L21/205

CPC classification number: C23C16/45519 ,  C23C16/409 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45576 ,  C23C16/45589

Abstract: A film deposition apparatus (2) forms a PZT film at a high deposition rate under a low temperature by using a single showerhead (50) throughout the deposition process. Process gases including a raw material gas and an oxidant gas are introduced into a process chamber (4) in which a wafer (W) is accommodated. The process chamber (4) is maintained at a predetermined vacuum during the film depositing process. A gas injection surface (57) of the shower head (50) from which the process gases are injected is divided into an inner zone (84) covering a center portion of the wafer (W) and an outer zone (86) surrounding the inner zone (84). The raw material gas is separately injected from the inner zone (84) and the outer zone (86), and the oxidant gas is separately injected from the inner zone (84) and the-outer zone (86).

Abstract translation: 在整个沉积过程中，通过使用单个喷头（50），薄膜沉积设备（2）在低温下以高沉积速率形成PZT薄膜。 包括原料气体和氧化剂气体的处理气体被引入容纳晶片（W）的处理室（4）中。 处理室（4）在膜沉积过程中保持在预定的真空。 喷射处理气体的喷淋头（50）的气体喷射表面（57）被分成覆盖晶片（W）的中心部分的内部区域（84）和围绕内部区域的外部区域（86） 区（84）。 原料气体从内部区域（84）和外部区域（86）分开注入，氧化剂气体从内部区域（84）和外部区域（86）分别注入。

公开(公告)号：KR100876474B1

公开(公告)日：2008-12-31

申请号：KR1020077000361

申请日：2006-01-11

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 마쓰모토겐지 ,  사코다도모유키 ,  나스마사유키 ,  이케다가쿠

IPC: H01L21/20 ,  H01L21/205

CPC classification number: C23C16/40 ,  C23C16/409 ,  C23C16/44 ,  C23C16/52 ,  H01L21/02197 ,  H01L21/02271 ,  H01L21/31691

Abstract: There is provided a film deposition method of depositing a multielement metal oxide film capable of depositing a multielement metal oxide film having a desired composition and a desired thickness in an improved repeatability. A film deposition method deposits a multielement metal oxide film on a surface of a workpiece by a film depositing process including supplying organometallic source gases generated by atomizing a plurality of organometallic compounds into a processing vessel capable of being evacuated. A dummy film deposition process corresponding to at least three cycles of the film deposition process is carried out by placing a dummy workpiece in the processing vessel and supplying the organometallic source gases into the processing vessel immediately before starting the film deposition process for depositing a multielement metal oxide film on the workpiece. Thus a multielement metal oxide film having a desired composition and a desired thickness can be deposited in an improved repeatability.

Abstract translation: 提供了一种沉积多元素金属氧化物膜的膜沉积方法，该多元素金属氧化物膜能够以改进的重复性沉积具有所需组成和期望厚度的多元素金属氧化物膜。 膜沉积方法通过膜沉积过程在工件的表面上沉积多元素金属氧化物膜，所述膜沉积过程包括将通过雾化多种有机金属化合物而产生的有机金属源气体供应到能够被抽空的处理容器中。 对应于至少三个周期的膜沉积过程的虚拟膜沉积过程通过将虚拟工件放置在处理容器中并在即将开始用于沉积多元素金属的膜沉积过程之前将有机金属源气体供应到处理容器中来执行 氧化膜在工件上。 因此，具有所需组成和所需厚度的多元素金属氧化物膜可以以改善的重复性沉积。

公开(公告)号：KR1020070062491A

公开(公告)日：2007-06-15

申请号：KR1020077000361

申请日：2006-01-11

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 마쓰모토겐지 ,  사코다도모유키 ,  나스마사유키 ,  이케다가쿠

IPC: H01L21/20 ,  H01L21/205

CPC classification number: C23C16/40 ,  C23C16/409 ,  C23C16/44 ,  C23C16/52 ,  H01L21/02197 ,  H01L21/02271 ,  H01L21/31691

Abstract: A method of forming a film that in the formation of a multicomponent metal oxide film, can enhance the reproducibility of contained element composition ratio, film thickness, etc. There is provided a method of forming a film, comprising feeding an organometallic raw gas generated by vaporization of multiple organometallic raw materials into treatment vessel (4) capable of vacuum drawing and forming a multicomponent metal oxide film on the surface of treatment object (W), wherein just before initiating of the film formation treatment on the treatment object, at least three-times-equivalent dummy film formation treatment is conducted by carrying a dummy treatment object in the treatment vessel (4) and passing the organometallic raw gas. Thus, in the formation of a multicomponent metal oxide film, the reproducibility of contained element composition ratio, film thickness, etc. can be enhanced.

Abstract translation: 在形成多组分金属氧化物膜时形成膜的方法可以提高所含元素组成比，膜厚度等的再现性。提供一种形成膜的方法，包括将由 将多种有机金属原料蒸发到能够在处理对象（W）的表面上真空拉伸和形成多组分金属氧化物膜的处理容器（4）中，其中在开始对处理对象的成膜处理之前，至少三 通过在处理容器（4）中携带虚拟处理物体并使有机金属原料气体通过，进行等效时间的成膜处理。 因此，在多组分金属氧化物膜的形成中，可以提高所含的元素组成比，膜厚等的再现性。

公开(公告)号：KR1020010083933A

公开(公告)日：2001-09-03

申请号：KR1020017005471

申请日：2000-08-30

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 신리키히로시 ,  마쓰모토겐지

IPC: H01L21/205

Abstract: 막 침착장치(2)는 막 침착 공정 전체에 걸쳐 1개의 샤워헤드(50)를 사용하여 저온 하에서 높은 막 침착 속도로 PZT 막을 형성한다. 원료 기체 및 산화제 기체를 포함하는 처리 기체는 웨이퍼(W)가 수용되어 있는 처리실(4)에 도입된다. 처리실(4)는 막 침착 공정중에는 예비 결정된 진공으로 유지된다. 처리 기체가 분사되는 샤워헤드(50)의 기체 분사면(57)은 웨이퍼(4)의 중앙부를 피복하는 내주 대역(84) 및 내주 대역(84)을 둘러싸는 외주 대역(86)으로 분할되어 있다. 원료 기체는 내주 대역(84) 및 외주 대역(86)에서 개별적으로 분사되며, 산화제 기체는 내주 대역(84) 및 외주 대역(86)에서 개별적으로 분사된다.