公开(公告)号：KR1020070083473A

公开(公告)日：2007-08-24

申请号：KR1020077002281

申请日：2006-06-12

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 마츠모토겐지 ,  나스마사유키 ,  사코다도모유키

IPC: H01L27/115 ,  H01L21/8247

CPC classification number: H01L21/31691 ,  C23C16/0272 ,  C23C16/40 ,  C23C16/409 ,  C30B25/02 ,  C30B29/32 ,  H01L21/02197 ,  H01L21/02271 ,  H01L27/11507 ,  H01L28/55 ,  G11C11/5685

Abstract: Disclosed is a method for manufacturing a semiconductor device comprising a step for forming a PbTiOx film, which mainly has a (111) orientation and a film thickness of more than 2 nm, as a nucleation layer on a lower electrode by MOCVD; and a step for forming a PZT film mainly having a (111) orientation on the nucleation layer. In this method, the step for forming the PbTiOx film is carried out under an oxygen partial pressure of less than 340 Pa.

Abstract translation: 公开了一种用于制造半导体器件的方法，其包括通过MOCVD在下电极上形成主要具有（111）取向和大于2nm的膜厚度的PbTiOx膜作为成核层的步骤; 以及在成核层上形成主要具有（111）取向的PZT膜的工序。 在该方法中，形成PbTiOx膜的工序在低于340Pa的氧分压下进行。

公开(公告)号：KR100876474B1

公开(公告)日：2008-12-31

申请号：KR1020077000361

申请日：2006-01-11

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 마쓰모토겐지 ,  사코다도모유키 ,  나스마사유키 ,  이케다가쿠

IPC: H01L21/20 ,  H01L21/205

CPC classification number: C23C16/40 ,  C23C16/409 ,  C23C16/44 ,  C23C16/52 ,  H01L21/02197 ,  H01L21/02271 ,  H01L21/31691

Abstract: There is provided a film deposition method of depositing a multielement metal oxide film capable of depositing a multielement metal oxide film having a desired composition and a desired thickness in an improved repeatability. A film deposition method deposits a multielement metal oxide film on a surface of a workpiece by a film depositing process including supplying organometallic source gases generated by atomizing a plurality of organometallic compounds into a processing vessel capable of being evacuated. A dummy film deposition process corresponding to at least three cycles of the film deposition process is carried out by placing a dummy workpiece in the processing vessel and supplying the organometallic source gases into the processing vessel immediately before starting the film deposition process for depositing a multielement metal oxide film on the workpiece. Thus a multielement metal oxide film having a desired composition and a desired thickness can be deposited in an improved repeatability.

Abstract translation: 提供了一种沉积多元素金属氧化物膜的膜沉积方法，该多元素金属氧化物膜能够以改进的重复性沉积具有所需组成和期望厚度的多元素金属氧化物膜。 膜沉积方法通过膜沉积过程在工件的表面上沉积多元素金属氧化物膜，所述膜沉积过程包括将通过雾化多种有机金属化合物而产生的有机金属源气体供应到能够被抽空的处理容器中。 对应于至少三个周期的膜沉积过程的虚拟膜沉积过程通过将虚拟工件放置在处理容器中并在即将开始用于沉积多元素金属的膜沉积过程之前将有机金属源气体供应到处理容器中来执行 氧化膜在工件上。 因此，具有所需组成和所需厚度的多元素金属氧化物膜可以以改善的重复性沉积。

公开(公告)号：KR100945319B1

公开(公告)日：2010-03-08

申请号：KR1020077002281

申请日：2006-06-12

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 마츠모토겐지 ,  나스마사유키 ,  사코다도모유키

IPC: H01L27/115 ,  H01L21/8247

CPC classification number: H01L21/31691 ,  C23C16/0272 ,  C23C16/40 ,  C23C16/409 ,  C30B25/02 ,  C30B29/32 ,  H01L21/02197 ,  H01L21/02271 ,  H01L27/11507 ,  H01L28/55

Abstract: 반도체 장치의 제조 방법은 하부 전극상에 핵 생성층으로서 주로 (111) 배향을 갖는 PbTiOx막을, MOCVD법에 의해, 2㎚를 초과하는 막 두께로 형성하는 공정과, 상기 핵 생성층상에 주로 (111) 배향의 PZT막을 형성하는 공정을 포함하고, 상기 PbTiOx막을 형성하는 공정은 340㎩ 미만의 산소 분압하에서 실행된다.

公开(公告)号：KR1020070062491A

公开(公告)日：2007-06-15

申请号：KR1020077000361

申请日：2006-01-11

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 마쓰모토겐지 ,  사코다도모유키 ,  나스마사유키 ,  이케다가쿠

IPC: H01L21/20 ,  H01L21/205

CPC classification number: C23C16/40 ,  C23C16/409 ,  C23C16/44 ,  C23C16/52 ,  H01L21/02197 ,  H01L21/02271 ,  H01L21/31691

Abstract: A method of forming a film that in the formation of a multicomponent metal oxide film, can enhance the reproducibility of contained element composition ratio, film thickness, etc. There is provided a method of forming a film, comprising feeding an organometallic raw gas generated by vaporization of multiple organometallic raw materials into treatment vessel (4) capable of vacuum drawing and forming a multicomponent metal oxide film on the surface of treatment object (W), wherein just before initiating of the film formation treatment on the treatment object, at least three-times-equivalent dummy film formation treatment is conducted by carrying a dummy treatment object in the treatment vessel (4) and passing the organometallic raw gas. Thus, in the formation of a multicomponent metal oxide film, the reproducibility of contained element composition ratio, film thickness, etc. can be enhanced.

Abstract translation: 在形成多组分金属氧化物膜时形成膜的方法可以提高所含元素组成比，膜厚度等的再现性。提供一种形成膜的方法，包括将由 将多种有机金属原料蒸发到能够在处理对象（W）的表面上真空拉伸和形成多组分金属氧化物膜的处理容器（4）中，其中在开始对处理对象的成膜处理之前，至少三 通过在处理容器（4）中携带虚拟处理物体并使有机金属原料气体通过，进行等效时间的成膜处理。 因此，在多组分金属氧化物膜的形成中，可以提高所含的元素组成比，膜厚等的再现性。