-
公开(公告)号：KR100876474B1
公开(公告)日：2008-12-31
申请号：KR1020077000361
申请日：2006-01-11
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/20 , H01L21/205
CPC classification number: C23C16/40 , C23C16/409 , C23C16/44 , C23C16/52 , H01L21/02197 , H01L21/02271 , H01L21/31691
Abstract: There is provided a film deposition method of depositing a multielement metal oxide film capable of depositing a multielement metal oxide film having a desired composition and a desired thickness in an improved repeatability. A film deposition method deposits a multielement metal oxide film on a surface of a workpiece by a film depositing process including supplying organometallic source gases generated by atomizing a plurality of organometallic compounds into a processing vessel capable of being evacuated. A dummy film deposition process corresponding to at least three cycles of the film deposition process is carried out by placing a dummy workpiece in the processing vessel and supplying the organometallic source gases into the processing vessel immediately before starting the film deposition process for depositing a multielement metal oxide film on the workpiece. Thus a multielement metal oxide film having a desired composition and a desired thickness can be deposited in an improved repeatability.
Abstract translation: 提供了一种沉积多元素金属氧化物膜的膜沉积方法，该多元素金属氧化物膜能够以改进的重复性沉积具有所需组成和期望厚度的多元素金属氧化物膜。 膜沉积方法通过膜沉积过程在工件的表面上沉积多元素金属氧化物膜，所述膜沉积过程包括将通过雾化多种有机金属化合物而产生的有机金属源气体供应到能够被抽空的处理容器中。 对应于至少三个周期的膜沉积过程的虚拟膜沉积过程通过将虚拟工件放置在处理容器中并在即将开始用于沉积多元素金属的膜沉积过程之前将有机金属源气体供应到处理容器中来执行 氧化膜在工件上。 因此，具有所需组成和所需厚度的多元素金属氧化物膜可以以改善的重复性沉积。
-
公开(公告)号：KR1020060064067A
公开(公告)日：2006-06-12
申请号：KR1020067004393
申请日：2004-08-30
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/02 , H01L21/205
CPC classification number: C23C16/45565 , C23C16/455
Abstract: A shower head (40) formed by stacking a shower base (41), a gas diffusion plate (42), and a shower plate (43) and supplying material gas and oxidizer gas to a wafer W on a loading table (5) through a first gas diffusion part (42a) and a second gas diffusion part (42b) formed in both faces of the gas diffusion plate (42), first gas outlets (43a) formed in the shower plate (43) and communicating with a first gas diffusion space (42c), and second gas outlets (43b) formed in the shower plate (43) and communicating with a second gas diffusion space (42d). A plurality of heat transfer columns (42e) fitted closely to the lower surface of the shower base (41) are installed in the first gas diffusion part (42a) so that portions therebetween can form the first gas diffusion space (42c), and radiant heat from the loading table (5) is transmitted by the heat transfer columns (42e) in the thickness direction of the shower head (40).
Abstract translation: 一种淋浴头（40），其通过层叠淋浴器基座（41），气体扩散板（42）和喷淋板（43）而形成，并将材料气体和氧化剂气体供应到装载台（5）上的晶片W 形成在气体扩散板（42）的两面的第一气体扩散部（42a）和第二气体扩散部（42b），形成在喷淋板（43）中的第一气体出口（43a），与第一气体 扩散空间（42c）和形成在喷淋板（43）中并与第二气体扩散空间（42d）连通的第二气体出口（43b）。 在第一气体扩散部（42a）中安装有与淋浴器基座（41）的下表面紧密配合的多个传热塔（42e），从而能够形成第一气体扩散空间（42c） 来自装载台（5）的热量通过传热塔（42e）在喷头（40）的厚度方向上传递。
-
公开(公告)号：KR100964042B1
公开(公告)日：2010-06-16
申请号：KR1020077028017
申请日：2007-03-30
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: C23C16/455 , H01L21/31
CPC classification number: C23C16/45565 , C23C16/409 , C23C16/4557 , C23C16/45574 , H01L21/31691
Abstract: 성막장치는, 반도체 웨이퍼(W)를 수용하는 처리용기(2)와, 처리용기(2)내에 배치되고, 반도체 웨이퍼(W)가 탑재되는 탑재대(5)와, 이 탑재대(5)와 대향하는 위치에 마련되어, 처리용기(2)내로 처리가스를 토출하는 처리가스 토출기구로서의 샤워헤드(40)와, 처리용기(2)내를 배기하는 배기장치(101)를 구비하고, 샤워헤드(40)는, 처리가스가 도입되는 가스유로를 갖고 있고, 가스유로를 둘러싸도록 환형의 온도 조절실(400)을 갖는다.
-
公开(公告)号：KR1020080010448A
公开(公告)日：2008-01-30
申请号：KR1020077028017
申请日：2007-03-30
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: C23C16/455 , H01L21/31
CPC classification number: C23C16/45565 , C23C16/409 , C23C16/4557 , C23C16/45574 , H01L21/31691
Abstract: A film forming apparatus comprising treatment vessel (2) for accommodating of semiconductor wafer (W); mounting table (5) disposed in the treatment vessel (2), on which the semiconductor wafer (W) is placed; shower head (40) as a treating gas emitting mechanism for emitting of treating gas into the treatment vessel (2), which shower head (40) is disposed in a position opposite to the mounting table (5); and exhauster (101) for exhausting of the interior of the treatment vessel (2), wherein the shower head (40) has a gas flow channel for introducing of treating gas and has circular temperature control chamber (400) disposed so as to surround the gas flow channel.
Abstract translation: 一种成膜装置，包括用于容纳半导体晶片（W）的处理容器（2） 设置在处理容器（2）中的安装台（5），其上放置有半导体晶片（W）; 淋浴头（40）作为处理气体发射机构，用于将处理气体排放到处理容器（2）中，该喷头（40）设置在与安装台（5）相对的位置; 和用于排出处理容器（2）内部的排气器（101），其中喷淋头（40）具有用于引入处理气体的气体流动通道，并且具有环形温度控制室（400） 气流通道。
-
公开(公告)号：KR100901892B1
公开(公告)日：2009-06-10
申请号：KR1020077029435
申请日：2004-08-30
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , H01L21/02
CPC classification number: C23C16/45565 , C23C16/455
Abstract: 샤워 베이스(41), 가스 확산판(42), 샤워 플레이트(43)를 중첩하여 구성되고, 가스 확산판(42)의 양면에 형성된 제 1 가스 확산부(42a), 제 2 가스 확산부(42b) 및 샤워 플레이트(43)에 형성되고 제 1 가스 확산 공간(42c)에 연통하는 제 1 가스 토출구(43a), 제 2 가스 확산 공간(42d)에 연통하는 제 2 가스 토출구(43b)를 거쳐서 탑재대(5)상의 웨이퍼(W)에 원료 가스 및 산화제 가스를 공급하는 샤워 헤드(40)에 있어서, 제 1 가스 확산부(42a)내에 샤워 베이스(41)의 하면에 밀착하는 복수의 전열 기둥(42e)을 설치하여 그 동안의 부분이 제 1 가스 확산 공간(42c)이 되도록 하고, 이 전열 기둥(42e)에 의해 탑재대(5)로부터 받는 복사열을 샤워 헤드(40)의 두께 방향으로 전달한다.
-
Patent Agency Ranking
公开(公告)号：KR1020070083473A
公开(公告)日：2007-08-24
申请号：KR1020077002281
申请日：2006-06-12
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L27/115 , H01L21/8247
CPC classification number: H01L21/31691 , C23C16/0272 , C23C16/40 , C23C16/409 , C30B25/02 , C30B29/32 , H01L21/02197 , H01L21/02271 , H01L27/11507 , H01L28/55 , G11C11/5685
Abstract: Disclosed is a method for manufacturing a semiconductor device comprising a step for forming a PbTiOx film, which mainly has a (111) orientation and a film thickness of more than 2 nm, as a nucleation layer on a lower electrode by MOCVD; and a step for forming a PZT film mainly having a (111) orientation on the nucleation layer. In this method, the step for forming the PbTiOx film is carried out under an oxygen partial pressure of less than 340 Pa.
Abstract translation: 公开了一种用于制造半导体器件的方法，其包括通过MOCVD在下电极上形成主要具有（111）取向和大于2nm的膜厚度的PbTiOx膜作为成核层的步骤; 以及在成核层上形成主要具有（111）取向的PZT膜的工序。 在该方法中，形成PbTiOx膜的工序在低于340Pa的氧分压下进行。
-
公开(公告)号：KR100945319B1
公开(公告)日：2010-03-08
申请号：KR1020077002281
申请日：2006-06-12
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L27/115 , H01L21/8247
CPC classification number: H01L21/31691 , C23C16/0272 , C23C16/40 , C23C16/409 , C30B25/02 , C30B29/32 , H01L21/02197 , H01L21/02271 , H01L27/11507 , H01L28/55
Abstract: 반도체 장치의 제조 방법은 하부 전극상에 핵 생성층으로서 주로 (111) 배향을 갖는 PbTiOx막을, MOCVD법에 의해, 2㎚를 초과하는 막 두께로 형성하는 공정과, 상기 핵 생성층상에 주로 (111) 배향의 PZT막을 형성하는 공정을 포함하고, 상기 PbTiOx막을 형성하는 공정은 340㎩ 미만의 산소 분압하에서 실행된다.
-
公开(公告)号：KR1020080045652A
公开(公告)日：2008-05-23
申请号：KR1020070118450
申请日：2007-11-20
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205
CPC classification number: H01L21/28079 , H01L29/4958 , H01L29/513 , H01L29/518
Abstract: A method of integrating metal-containing films into a semiconductor device is provided to deposit and integrate a tungsten-containing film and another metal-containing film of the low pollution level into the semiconductor device. A substrate is provided into a process chamber(210). A tungsten-containing film is deposited on the substrate at a first substrate temperature by exposing the substrate in a deposition gas containing tungsten carbonyl precursor(220). The tungsten-containing film is annealed at a second substrate temperature higher than the first substrate temperature, so as to eliminate CO gas(230). A barrier layer is formed on the annealed tungsten containing film(240).
Abstract translation: 提供了将含金属膜整合到半导体器件中的方法，以将含钨薄膜和低污染等级的含金属膜沉积并整合到半导体器件中。 衬底被提供到处理室（210）中。 通过在含有羰基钨前体（220）的沉积气体中暴露衬底，在第一衬底温度下在衬底上沉积含钨膜。 含钨膜在高于第一基板温度的第二基板温度下退火，以便消除CO气体（230）。 在退火的含钨膜（240）上形成阻挡层。
-
公开(公告)号：KR1020080003940A
公开(公告)日：2008-01-08
申请号：KR1020077029435
申请日：2004-08-30
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/205 , H01L21/02
CPC classification number: C23C16/45565 , C23C16/455
Abstract: A shower head (40) formed by stacking a shower base (41), a gas diffusion plate (42), and a shower plate (43) and supplying material gas and oxidizer gas to a wafer W on a loading table (5) through a first gas diffusion part (42a) and a second gas diffusion part (42b) formed in both faces of the gas diffusion plate (42), first gas outlets (43a) formed in the shower plate (43) and communicating with a first gas diffusion space (42c), and second gas outlets (43b) formed in the shower plate (43) and communicating with a second gas diffusion space (42d). A plurality of heat transfer columns (42e) fitted closely to the lower surface of the shower base (41) are installed in the first gas diffusion part (42a) so that portions therebetween can form the first gas diffusion space (42c), and radiant heat from the loading table (5) is transmitted by the heat transfer columns (42e) in the thickness direction of the shower head (40).
Abstract translation: 一种淋浴头（40），其通过层叠淋浴器基座（41），气体扩散板（42）和喷淋板（43）而形成，并将材料气体和氧化剂气体供应到装载台（5）上的晶片W 形成在气体扩散板（42）的两面的第一气体扩散部（42a）和第二气体扩散部（42b），形成在喷淋板（43）中的第一气体出口（43a），与第一气体 扩散空间（42c）和形成在喷淋板（43）中并与第二气体扩散空间（42d）连通的第二气体出口（43b）。 在第一气体扩散部（42a）中安装有与淋浴器基座（41）的下表面紧密配合的多个传热塔（42e），从而能够形成第一气体扩散空间（42c） 来自装载台（5）的热量通过传热塔（42e）在喷头（40）的厚度方向上传递。
-
公开(公告)号：KR1020070062491A
公开(公告)日：2007-06-15
申请号：KR1020077000361
申请日：2006-01-11
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/20 , H01L21/205
CPC classification number: C23C16/40 , C23C16/409 , C23C16/44 , C23C16/52 , H01L21/02197 , H01L21/02271 , H01L21/31691
Abstract: A method of forming a film that in the formation of a multicomponent metal oxide film, can enhance the reproducibility of contained element composition ratio, film thickness, etc. There is provided a method of forming a film, comprising feeding an organometallic raw gas generated by vaporization of multiple organometallic raw materials into treatment vessel (4) capable of vacuum drawing and forming a multicomponent metal oxide film on the surface of treatment object (W), wherein just before initiating of the film formation treatment on the treatment object, at least three-times-equivalent dummy film formation treatment is conducted by carrying a dummy treatment object in the treatment vessel (4) and passing the organometallic raw gas. Thus, in the formation of a multicomponent metal oxide film, the reproducibility of contained element composition ratio, film thickness, etc. can be enhanced.
Abstract translation: 在形成多组分金属氧化物膜时形成膜的方法可以提高所含元素组成比，膜厚度等的再现性。提供一种形成膜的方法，包括将由 将多种有机金属原料蒸发到能够在处理对象（W）的表面上真空拉伸和形成多组分金属氧化物膜的处理容器（4）中，其中在开始对处理对象的成膜处理之前，至少三 通过在处理容器（4）中携带虚拟处理物体并使有机金属原料气体通过，进行等效时间的成膜处理。 因此，在多组分金属氧化物膜的形成中，可以提高所含的元素组成比，膜厚等的再现性。
-
-
-
-
-
-
-
-
-
Search Results
10
records
(took 0.065 seconds)
