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公开(公告)号：KR101773806B1
公开(公告)日：2017-09-01
申请号：KR1020100140228
申请日：2010-12-31
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/02 , H01L21/67 , H01L21/3065
CPC classification number: H01L21/67028 , H01L21/02057
Abstract: 실리콘층의노출부를포함하는패턴을플라즈마에칭에의해형성할때, 부생성물의제거와잔류불소의제거를패턴에손상을주지않고행할수 있는기판의클리닝방법및 기판의클리닝장치를제공한다. 기판상의패턴을플라즈마에칭에의해형성한후에, 기판의표면을클리닝하는기판의클리닝방법으로서, 기판을 HF 가스분위기에노출하여부생성물을제거하는부생성물제거공정과, 수소가스와, 탄소와수소를구성원소로서포함하는화합물의가스와, 희가스를포함하는클리닝가스를플라즈마화하여기판에작용시키고, 상기기판에잔류한불소를제거하는잔류불소제거공정을구비하고있다.
Abstract translation: 当通过包括硅层，以等离子体蚀刻的暴露部分上形成图案而形成，为副产物和残留的氟基板清洗方法和基板能够执行而不会对图案除去的损坏的去除提供的清洁装置。 通过在衬底的等离子体蚀刻的图案形成Hanhue，衬底的清洗方法来清洁衬底的表面，并暴露于HF气体气氛的底物和副产物除去步骤，以除去副产物，氢气，碳和氢 和含有作为构成元素的化合物的气体，以及含有该等离子体清洗气体的稀有气体和作用于底物，并且具有在所述基板上除去残留的氟的残留的氟去除过程。
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公开(公告)号：KR1020110081765A
公开(公告)日：2011-07-14
申请号：KR1020100140228
申请日：2010-12-31
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/02 , H01L21/67 , H01L21/3065
CPC classification number: H01L21/67028 , H01L21/02057 , H01L21/02049 , H01L21/02 , H01L21/02315 , H01L21/0234 , H01L21/0273 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/30621 , H01L21/3065 , H01L21/31116 , H01L21/76825 , H01L21/76826 , H05H1/46
Abstract: PURPOSE: A substrate cleaning method and a substrate cleaning apparatus are provided to remove by-production and residual fluorine without damage to a pattern in forming the laminated pattern of a silicon layer and an insulating layer through plasma etching. CONSTITUTION: In a substrate cleaning method and a substrate cleaning apparatus, a substrate is exposed to an HF gas to remove a by-product. The chemical compound gas includes hydrogen gas, carbon and hydrogen. Cleaning gas including rare gases are made plasma and are applied to the substrate to remove the RESIDUAL FLUORINE on the substrate.
Abstract translation: 目的：提供基板清洗方法和基板清洁装置，以通过等离子体蚀刻在形成硅层和绝缘层的层叠图案中不损害图案来除去副产物和残余氟。 构成：在基板清洗方法和基板清洗装置中，将基板暴露于HF气体中以除去副产物。 化合物气体包括氢气，碳和氢气。 包括稀有气体在内的清洁气体被制成等离子体，并且被施加到衬底上以除去衬底上的残留氟。
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