公开(公告)号：KR101124924B1

公开(公告)日：2012-04-12

申请号：KR1020097014829

申请日：2007-12-27

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 사와다이쿠오 ,  벤체크피타 ,  오시타다츠로 ,  마츠자키가즈요시 ,  강송윤

IPC: H05H1/46 ,  H01L21/3065 ,  H01L21/205

CPC classification number: H01J37/32568 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32541

Abstract: A plasma processing apparatus includes a first electrode and a second electrode so arranged in the upper portion of a processing chamber as to face a mounting table, a gas supply unit for supplying a processing gas between the first electrode and the second electrode, a RF power supply unit for applying a RF power between the first electrode and the second electrode for converting the process gas supplied between the electrodes into a plasma, and a gas exhaust unit for evacuating the inside of the processing chamber to a vacuum level from the lower portion of the processing chamber. Since the electron temperature in the plasma is low near a substrate on the mounting table, damage to the substrate caused by the plasma can be suppressed. In addition, since a metal can be used as a material for the processing chamber, the processing chamber can have good temperature controllability.

公开(公告)号：KR1020090091332A

公开(公告)日：2009-08-27

申请号：KR1020097014829

申请日：2007-12-27

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 사와다이쿠오 ,  벤체크피타 ,  오시타다츠로 ,  마츠자키가즈요시 ,  강송윤

IPC: H05H1/46 ,  H01L21/3065 ,  H01L21/205

CPC classification number: H01J37/32568 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32541

Abstract: Disclosed is a plasma processing apparatus wherein good temperature controllability is obtained in the side wall of the processing vessel and damage to the substrate by plasma is suppressed. Specifically disclosed is a plasma processing apparatus (1) comprising a first electrode (31) and a second electrode (32) so arranged in the upper portion of a processing vessel (11) as to face a stage (2), a gas supplying unit (4) for supplying a process gas between the first electrode (31) and the second electrode (32), a high-frequency power supply unit (33) for applying a high-frequency power between the first electrode (31) and the second electrode (32) for changing the process gas supplied between the electrodes (31, 32) into a plasma, and an evacuation system (14) for vacuum evacuating the atmosphere within the processing vessel (11) from the lower portion of the processing vessel (11). Since the electron temperature in the plasma is low near a substrate B on the stage (2), damage to the substrate B caused by the plasma can be suppressed. In addition, since a metal can be used as a material for the processing vessel (11), the processing vessel (11) can have good temperature controllability. ® KIPO & WIPO 2009

Abstract translation: 公开了一种等离子体处理装置，其在处理容器的侧壁中获得良好的温度可控性，并且抑制了通过等离子体对基板的损坏。 具体公开了一种等离子体处理装置（1），其包括第一电极（31）和第二电极（32），所述第一电极（31）和第二电极（32）被布置在处理容器（11）的上部以面向台（2），气体供应单元 （4），用于在第一电极（31）和第二电极（32）之间提供处理气体;高频电源单元（33），用于在第一电极（31）和第二电极 电极（32），用于将在电极（31,32）之间供给的工艺气体改变为等离子体;以及抽真空系统（14），用于从处理容器的下部真空排空处理容器（11）内的气氛 11）。 由于在载物台（2）上的基板B附近的等离子体中的电子温度低，所以能够抑制由等离子体引起的对基板B的损伤。 此外，由于金属可以用作处理容器（11）的材料，处理容器（11）可以具有良好的温度可控性。 ®KIPO＆WIPO 2009