公开(公告)号：KR1020110087201A

公开(公告)日：2011-08-02

申请号：KR1020100110382

申请日：2010-11-08

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 사토노리후미 ,  기바유키오 ,  미야모토테츠시 ,  하세베카즈히사

IPC: H01L21/027

CPC classification number: H01L21/6715 ,  G03F7/3021 ,  H01L21/67109 ,  H01L21/67178 ,  H01L21/67742 ,  H01L21/67748 ,  H01L21/0274 ,  G03F7/2041 ,  G03F7/32 ,  G03F7/70341 ,  G03F7/70916

Abstract: PURPOSE: A method for developing a resist film on a substrate, a computer storage apparatus, and a developing process system are provided to appropriately forming a predetermined pattern on a substrate by uniformly developing a resist film on substrate planes using a developer with low temperature. CONSTITUTION: A first cooling process, which has lower temperature than room temperature in a chiller, mounts and cools a substrate in a cooling plate with higher temperature than fixed temperature(S1). A second cooling process sends back the substrate to a developing apparatus. Rinse liquid, which is less than a fixed temperature, is supplied to the substrate and the substrate is cooled(S2). A developing process supplies a developer on the substrate, develops a resist film, and forms a resist pattern(S3). The surface of the substrate is washed to the top of the substrate in a cleaning process by being supplied the rinse liquid with a fixed temperature(S4).

Abstract translation: 目的：提供一种用于在基板上显影抗蚀剂膜的方法，计算机存储装置和显影处理系统，以通过使用低温显影剂在基板平面上均匀显影抗蚀剂膜，在基板上适当地形成预定图案。 构成：在冷却器中具有比室温低的温度的第一冷却过程在比固定温度高的冷却板中安装和冷却基板（S1）。 第二冷却过程将衬底发送回显影装置。 将低于固定温度的冲洗液供给到基板，冷却基板（S2）。 显影工序在基板上提供显影剂，显影抗蚀膜，形成抗蚀剂图案（S3）。 通过以固定的温度供给冲洗液，在清洗过程中将基材的表面洗涤到基材的顶部（S4）。

公开(公告)号：KR101617650B1

公开(公告)日：2016-05-03

申请号：KR1020100110382

申请日：2010-11-08

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 사토노리후미 ,  기바유키오 ,  미야모토테츠시 ,  하세베카즈히사

IPC: H01L21/027

CPC classification number: H01L21/6715 ,  G03F7/3021 ,  H01L21/67109 ,  H01L21/67178 ,  H01L21/67742 ,  H01L21/67748

Abstract: 저온의현상액을이용한현상처리를기판면내에서균일하게행하고, 기판상에소정의패턴을적절히형성한다. 우선, 냉각장치에서 15℃로온도조절된냉각판에기판을재치(載置)하여냉각한다(스텝(S1)). 그후, 현상장치에서 3℃의린스액을기판으로공급하여기판을냉각한다(스텝(S2)). 그후, 기판상으로 3℃의현상액을공급하고기판상의레지스트막을현상하여상기레지스트막에레지스트패턴을형성한다(스텝(S3)). 그후, 기판상으로 3℃의린스액을공급하여기판의표면을세정한다(스텝(S4)). 그후, 기판상으로 3℃의처리액을공급하여기판의레지스트패턴상의린스액의표면장력을저하시킨다(스텝(S5)).