公开(公告)号：KR101617650B1

公开(公告)日：2016-05-03

申请号：KR1020100110382

申请日：2010-11-08

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 사토노리후미 ,  기바유키오 ,  미야모토테츠시 ,  하세베카즈히사

IPC: H01L21/027

CPC classification number: H01L21/6715 ,  G03F7/3021 ,  H01L21/67109 ,  H01L21/67178 ,  H01L21/67742 ,  H01L21/67748

Abstract: 저온의현상액을이용한현상처리를기판면내에서균일하게행하고, 기판상에소정의패턴을적절히형성한다. 우선, 냉각장치에서 15℃로온도조절된냉각판에기판을재치(載置)하여냉각한다(스텝(S1)). 그후, 현상장치에서 3℃의린스액을기판으로공급하여기판을냉각한다(스텝(S2)). 그후, 기판상으로 3℃의현상액을공급하고기판상의레지스트막을현상하여상기레지스트막에레지스트패턴을형성한다(스텝(S3)). 그후, 기판상으로 3℃의린스액을공급하여기판의표면을세정한다(스텝(S4)). 그후, 기판상으로 3℃의처리액을공급하여기판의레지스트패턴상의린스액의표면장력을저하시킨다(스텝(S5)).

公开(公告)号：KR1020110087201A

公开(公告)日：2011-08-02

申请号：KR1020100110382

申请日：2010-11-08

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 사토노리후미 ,  기바유키오 ,  미야모토테츠시 ,  하세베카즈히사

IPC: H01L21/027

CPC classification number: H01L21/6715 ,  G03F7/3021 ,  H01L21/67109 ,  H01L21/67178 ,  H01L21/67742 ,  H01L21/67748 ,  H01L21/0274 ,  G03F7/2041 ,  G03F7/32 ,  G03F7/70341 ,  G03F7/70916

Abstract: PURPOSE: A method for developing a resist film on a substrate, a computer storage apparatus, and a developing process system are provided to appropriately forming a predetermined pattern on a substrate by uniformly developing a resist film on substrate planes using a developer with low temperature. CONSTITUTION: A first cooling process, which has lower temperature than room temperature in a chiller, mounts and cools a substrate in a cooling plate with higher temperature than fixed temperature(S1). A second cooling process sends back the substrate to a developing apparatus. Rinse liquid, which is less than a fixed temperature, is supplied to the substrate and the substrate is cooled(S2). A developing process supplies a developer on the substrate, develops a resist film, and forms a resist pattern(S3). The surface of the substrate is washed to the top of the substrate in a cleaning process by being supplied the rinse liquid with a fixed temperature(S4).

Abstract translation: 目的：提供一种用于在基板上显影抗蚀剂膜的方法，计算机存储装置和显影处理系统，以通过使用低温显影剂在基板平面上均匀显影抗蚀剂膜，在基板上适当地形成预定图案。 构成：在冷却器中具有比室温低的温度的第一冷却过程在比固定温度高的冷却板中安装和冷却基板（S1）。 第二冷却过程将衬底发送回显影装置。 将低于固定温度的冲洗液供给到基板，冷却基板（S2）。 显影工序在基板上提供显影剂，显影抗蚀膜，形成抗蚀剂图案（S3）。 通过以固定的温度供给冲洗液，在清洗过程中将基材的表面洗涤到基材的顶部（S4）。

公开(公告)号：KR101633066B1

公开(公告)日：2016-06-23

申请号：KR1020110000820

申请日：2011-01-05

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오카모토요시키 ,  하마다마사히토 ,  미야모토테츠시

IPC: H01L21/302 ,  H01L21/027

Abstract: 저온의처리액을이용한처리에서처리액노즐의결로의발생을방지하여, 처리를기판면내에서균일하게행한다. 현상처리장치(1)는기판을보지하는보지부재와, 기판상으로현상액, 린스액, 처리액을공급하는복합노즐체(42)와, 보지부재상에서퇴피한복합노즐체(42)를대기시키는노즐배스(44)를가지고있다. 노즐배스(44) 내에는복합노즐체(42)의선단부가수용된다. 노즐배스(44)는대기중인복합노즐체(42)를사이에두고설치되며, 당해복합노즐체(42)에서노즐배스(44)로부터노출된노출부를둘러싸도록수평방향으로연장되는한 쌍의퍼지가스노즐(93, 93)을가지고있다. 한쌍의퍼지가스노즐(93, 93)은복합노즐체(42)의노출부에대하여수분을포함하지않는퍼지가스를공급한다.

公开(公告)号：KR1020110087212A

公开(公告)日：2011-08-02

申请号：KR1020110000820

申请日：2011-01-05

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오카모토요시키 ,  하마다마사히토 ,  미야모토테츠시

IPC: H01L21/302 ,  H01L21/027

CPC classification number: H01L21/302 ,  G03F1/60 ,  G03F7/2041 ,  G03F7/70341 ,  G03F7/70583 ,  G03F7/70691 ,  H01L21/0274

Abstract: PURPOSE: A processing apparatus for processing a substrate, a processing method thereof, a program, and a computer storage device are provided to prevent a processing liquid nozzle from dew condensation using processing liquid with low temperature and uniformly process the inner side of a substrate. CONSTITUTION: A retention member is a processing unit which processes a substrate(G) using processing liquid with lower preset temperature than room temperature and holds the substrate. A processing liquid nozzle supplies processing liquid on a substrate. A nozzle bath(44) accepts the tip end part of the processing liquid nozzle, which is retreated in the upper part of the retention member, and makes the processing liquid nozzle wait. A pair of purge gas nozzles is arranged between the processing liquid nozzle, which waits in the nozzle bath, and is extended longer than the length of a horizontal direction in an exposed part which is exposed from the nozzle bath of the processing liquid nozzle. Purge gas which does not contain moisture is supplied to the exposed part.

Abstract translation: 目的：提供一种用于处理基板的处理装置，其处理方法，程序和计算机存储装置，以防止处理液喷嘴使用低温处理液进行结露，并均匀地处理基板的内侧。 构成：保持构件是使用具有比室温低的预设温度的处理液处理基板（G）并保持基板的处理单元。 处理液喷嘴在基板上提供处理液。 喷嘴槽（44）接受在保持构件的上部退避的处理液喷嘴的前端部，使处理液喷嘴等待。 一对吹扫气体喷嘴布置在处理液喷嘴之间，该喷嘴在喷嘴槽中等待，并且在从处理液喷嘴的喷嘴槽露出的暴露部分中延伸长于水平方向的长度。 将不含有水分的吹扫气体供给到暴露部分。