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公开(公告)号：KR101568879B1
公开(公告)日：2015-11-12
申请号：KR1020090027668
申请日：2009-03-31
Applicant: 도쿄엘렉트론가부시키가이샤
CPC classification number: H01L22/12 , H01L21/32137 , H01L22/20 , H01L2924/0002 , H01L2924/00
Abstract: 본발명은다층프로세싱시퀀스및 다층/다중입력/다중출력(MLMIMO : Multi-Layer/Multi-Input/Multi-Output) 모델및 라이브러리를이용하여기판을프로세싱하는방법을제공하고, 상기다층/다중입력/다중출력모델및 라이브러리는하나이상의마스킹층 생성프로시저, 하나이상의사전-프로세싱측정프로시저, 하나이상의부분-에칭(P-E) 프로시저, 하나이상의최종-에칭(F-E) 프로시저, 및하나이상의프로세싱이후의측정프로시저를포함할수 있다.
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Patent Agency Ranking
公开(公告)号：KR1020100018478A
公开(公告)日：2010-02-17
申请号：KR1020090072541
申请日：2009-08-06
Applicant: 도쿄엘렉트론가부시키가이샤
CPC classification number: H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
Abstract: PURPOSE: A method for using multi-layer/multi-input/multi-output(MLMIMO) models for metal-gate structures is provided to optimize throughput by using multi-layer/multi-step(MLMS) and multi-layer/multi-input/multi-output(MLMIMO) models. CONSTITUTION: A system controller(190) is connected to an MES(180) by using data transferring subsystem(181). A lithography subsystem(110) includes a transfer/storage element(112), a processing element(113), a controller(114) and an evaluation element(115). The transfer/storage element is connected to the evaluation element and a transfer subsystem(170). A wafer(105) is transferred between the transfer subsystem and the lithography subsystem on real-time. A scanner subsystem(120) includes a transfer/storage element(122), a processing element(123), a controller(124) and an evaluation component(125). The scanner subsystem is used in order to perform extreme ultraviolet exposure procedure.
Abstract translation: 目的：提供一种使用金属栅结构的多层/多输入/多输出（MLMIMO）模型的方法，通过使用多层/多步（MLMS）和多层/多层 输入/多输出（MLMIMO）模型。 构成：系统控制器（190）通过使用数据传送子系统（181）连接到MES（180）。 光刻子系统（110）包括传送/存储元件（112），处理元件（113），控制器（114）和评估元件（115）。 传送/存储元件连接到评估元件和传送子系统（170）。 晶片（105）被实时地传送到传送子系统和光刻子系统之间。 扫描器子系统（120）包括传送/存储元件（122），处理元件（123），控制器（124）和评估元件（125）。 为了执行极紫外线曝光程序，使用扫描仪子系统。
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公开(公告)号：KR101526615B1
公开(公告)日：2015-06-05
申请号：KR1020097021283
申请日：2008-03-11
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/00 , H01L21/687 , C23C16/458
CPC classification number: H01L21/68735 , C23C16/4586 , C23C16/466 , H01L21/67069 , H01L21/67248 , H01L21/68714
Abstract: 시스템또는처리로부터발생하는불균일성을포함한불균일한결과를보상하기위해처리중에기판전체에걸쳐반경방향또는비반경방향의온도분포의제어가이루어진다. 웨이퍼전체에걸쳐열전도를변경하기위해웨이퍼지지척[기판지지테이블(20, 20a)] 위의상이한영역들전체에걸쳐후면가스를상이하게흐르게함으로써온도를바람직하게는동적으로제어한다. 지지테이블(20, 20a) 내의포트(26, 26a)가그룹화되고, 시스템및 처리불균일성을보상하기위해상기영역각각에서의가스압을제어하여웨이퍼온도를공간적으로그리고바람직하게는동적으로제어하는컨트롤러(35)에응답하는상이한밸브(32)에의해그룹에대한가스가개별적으로제어된다. 포트(26, 26a)와상기포트(26, 26a) 주변의포트(26, 26a)에의가스흐름에영향을미치는밸브(32)를동적으로개별제어함으로써, 기판의후면에가해진국소력을제어하기위하여상이한포트(26, 26a)에서후면가스압을개별적으로제어하여웨이퍼변형에영향을미친다.
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公开(公告)号：KR1020090104770A
公开(公告)日：2009-10-06
申请号：KR1020090027668
申请日：2009-03-31
Applicant: 도쿄엘렉트론가부시키가이샤
CPC classification number: H01L22/12 , H01L21/32137 , H01L22/20 , H01L2924/0002 , H01L2924/00
Abstract: PURPOSE: A multi-layer/multi-input/multi-output models and a method for using the same are provided to calculate the map related to the reliability of a substrate. CONSTITUTION: A multi-layer/multi-input/multi-output models and a method for using the same are comprised of the steps: determining a first multilayer processing sequence to form at least one final poly-gate structure from at least multi-gate structure; selecting first multilayer / multiple input / multi-output model for simulating first multilayer processing sequence; determining a first DV set related to the first multilayer / multiple input / multi-output model; and setting the first MV set related to the first multilayer / multiple input / multi-output model by using more than one candidate recipe.
Abstract translation: 目的：提供多层/多输入/多输出模型及其使用方法，以计算与基板可靠性相关的图。 构成：多层/多输入/多输出模型及其使用方法包括以下步骤：确定第一多层处理序列以从至少多栅极形成至少一个最终多晶硅结构 结构体; 选择用于模拟第一多层处理序列的第一多层/多输入/多输出模型; 确定与所述第一多层/多输入/多输出模型相关的第一DV集合; 并且通过使用多于一个候选配方来设置与第一多层/多输入/多输出模型相关的第一MV集。
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公开(公告)号：KR101530098B1
公开(公告)日：2015-06-19
申请号：KR1020090072541
申请日：2009-08-06
Applicant: 도쿄엘렉트론가부시키가이샤
CPC classification number: H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
Abstract: 본발명은하나이상의측정절차, 하나이상의폴리에칭(P-E)시퀀스및 하나이상의금속게이트에칭시퀀스를포함할수 있는다층처리시퀀스및 다층/다중입력/다중출력(MLMIMO; Multi-Layer/Multi-Input/Multi-Output) 모델및 라이브러리를이용하여웨이퍼를프로세싱하는방법을제공한다. MLMIMO 프로세스제어는복수층사이의동적상호행동모델링및/또는복수의프로세스단계를이용한다. 다층및/또는복수의프로세스단계는, 등방성및/또는이방성에칭프로세스를이용하여생성될수 있는라인, 트렌치, 비어, 스페이서, 컨택트및 게이트구조의생성과연관될수 있다.
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公开(公告)号：KR1020100015515A
公开(公告)日：2010-02-12
申请号：KR1020097021283
申请日：2008-03-11
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/00 , H01L21/687 , C23C16/458
CPC classification number: H01L21/68735 , C23C16/4586 , C23C16/466 , H01L21/67069 , H01L21/67248 , H01L21/68714
Abstract: Control of radial or non-radial temperature distribution is controlled across a substrate during processing to compensate for non-uniform effects, including non-uniformities arising from system or process. Temperature is controlled, preferably dynamically, by flowing backside gas differently across different areas on a wafer supporting chuck (substrate support table 20, 20a) to vary heat conduction across the wafer. Ports (26, 26a) in the support table (20, 20a) are grouped, and gas to or from the groups is separately controlled by different valves (32) responsive to a controller (35) that controls gas pressure in each of the areas to spatially and preferably dynamically control wafer temperature to compensate for system and process non-uniformities. Wafer deformation is affected by separately controlling the pressure of the backside gas at different ports (26, 26a) to control the local force exerted on the backside of the substrate, by separately dynamically controlling valves (32) affecting gas flow to a port (26, 26a) and ports (26, 26a) surrounding said port (26, 26a).
Abstract translation: 径向或非径向温度分布的控制在处理过程中跨越衬底进行控制，以补偿不均匀的影响，包括由系统或过程产生的不均匀性。 通过在晶片支撑卡盘（衬底支撑台20,20a）上的不同区域上不同地流动背面气体来改变温度，优选动态地改变，以改变横跨晶片的热传导。 在支撑台（20,20a）中的端口（26,26a）被分组，并且响应于控制器（35），单独地由不同的阀（32）控制到组或从组中的气体，控制器控制每个区域中的气体压力 在空间上优选地动态地控制晶片温度以补偿系统和工艺的不均匀性。 通过分别控制不同端口（26,2b）处的背侧气体的压力来控制施加在基板的背面上的局部力，通过分别动态地控制影响到端口（26）的气体流动的阀（32）来影响晶片变形 ，26a）和围绕所述端口（26,2a）的端口（26,26a）。
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