公开(公告)号：KR101477159B1

公开(公告)日：2014-12-29

申请号：KR1020110046713

申请日：2011-05-18

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 가키모토아키노부 ,  다카기사토시 ,  아리가쥰지 ,  기무라노리후미 ,  하세베카즈히데

IPC: H01L21/28

CPC classification number: H01L21/76876 ,  C23C16/045 ,  C23C16/24 ,  H01L21/28556 ,  H01L21/76877

Abstract: (과제) 보이드의발생을억제할수 있는실리콘막의형성방법및 그의형성장치를제공한다. (해결수단) 실리콘막의형성방법은, 제1 성막공정과, 에칭공정과, 제2 성막공정을구비하고있다. 제1 성막공정에서는, 피(被)처리체의홈을매입하도록실리콘막을성막한다. 에칭공정에서는, 제1 성막공정으로성막된실리콘막을에칭하여상기홈의개구부를넓힌다. 제2 성막공정에서는, 에칭공정으로개구부가넓혀진홈에실리콘막을매입하도록성막한다. 이에따라, 표면에홈이형성된피처리체의홈에실리콘막을형성한다.

公开(公告)号：KR1020110128145A

公开(公告)日：2011-11-28

申请号：KR1020110046713

申请日：2011-05-18

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 가키모토아키노부 ,  다카기사토시 ,  아리가쥰지 ,  기무라노리후미 ,  하세베카즈히데

IPC: H01L21/28

CPC classification number: H01L21/76876 ,  C23C16/045 ,  C23C16/24 ,  H01L21/28556 ,  H01L21/76877

Abstract: PURPOSE: A method and an apparatus for forming a silicon film are provided to control property deterioration as an electrode of a Si film which is formed by eliminating a native oxide film which is formed in the bottom part of a groove before a first deposition process. CONSTITUTION: A method for forming a silicon film(54) is composed of a first deposition process, an etching process, and a second deposition process. The silicon film is layered in order to bury the groove of a processed body in the first deposition process. An opening of the groove widens by etching the silicon film which is layered by the first deposition process in the etching process. The groove is layered in order to bury the silicon film in the groove in which the opening widens in the second deposition process. The silicon film is formed in the groove of the processed body.

Abstract translation: 目的：提供一种用于形成硅膜的方法和装置，以控制作为通过消除在第一沉积工艺之前形成在凹槽的底部中的自然氧化膜形成的Si膜的电极的性能劣化。 构成：形成硅膜（54）的方法由第一沉积工艺，蚀刻工艺和第二沉积工艺组成。 层叠硅膜以便在第一沉积工艺中埋入加工体的凹槽。 通过在蚀刻工艺中蚀刻通过第一沉积工艺层叠的硅膜来扩大凹槽的开口。 为了将硅膜埋入其中开口在第二沉积工艺中变宽的凹槽中，将该沟槽分层。 硅膜形成在加工体的槽中。