公开(公告)号：KR1020140094461A

公开(公告)日：2014-07-30

申请号：KR1020140006798

申请日：2014-01-20

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 히모리신지 ,  이토에츠지 ,  요코타아키히로 ,  쿠사노슈 ,  이시즈카히로아키 ,  나가세키카즈야

IPC: H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/32165 ,  H01J37/3266 ,  H01J37/32669 ,  H01L21/3081 ,  H01L21/31138

Abstract: Provided is a method of etching a multilayer film including an organic film formed between first and second oxide films. In this method, a high frequency power for generating plasma in etching the organic film is greater than those in etching the first and second oxide films. High frequency bias powers for ion implantation in the etching of the first and second oxide films are greater than that in the etching of the organic film. In the etching of the first and second oxide films and the organic film, a magnetic field is generated such that horizontal magnetic field components in a radial direction with respect to a central axis line of a target object have an intensity distribution having a peak value at a position far from the central axis line, and a position of the peak value in the etching of the organic film is closer to the central axis line than those of the horizontal magnetic field components of the first and second oxide films.

Abstract translation: 提供了一种蚀刻包括在第一和第二氧化物膜之间形成的有机膜的多层膜的方法。 在该方法中，蚀刻有机膜时产生等离子体的高频功率大于蚀刻第一和第二氧化物膜时的高频电力。 在第一和第二氧化物膜的蚀刻中用于离子注入的高频偏置功率大于蚀刻有机膜时的高频偏置功率。 在第一和第二氧化物膜和有机膜的蚀刻中，产生磁场，使得相对于目标物体的中心轴线的径向的水平磁场分量具有峰值在 远离中心轴线的位置，并且有机膜的蚀刻中的峰值位置比第一和第二氧化物膜的水平磁场分量更靠近中心轴线。

公开(公告)号：KR102147200B1

公开(公告)日：2020-08-24

申请号：KR1020140006798

申请日：2014-01-20

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 히모리신지 ,  이토에츠지 ,  요코타아키히로 ,  쿠사노슈 ,  이시즈카히로아키 ,  나가세키카즈야

IPC: H01L21/3065