公开(公告)号：KR1020080020963A

公开(公告)日：2008-03-06

申请号：KR1020070088261

申请日：2007-08-31

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 하세베가즈히데 ,  주파오-화 ,  우메자와고오따 ,  가도나가겐따로오 ,  장패리

IPC: H01L21/205

CPC classification number: C23C16/45525 ,  C03C17/225 ,  C03C2217/281 ,  C03C2217/282 ,  C03C2217/283 ,  C03C2218/152 ,  C23C16/30 ,  C23C16/45542 ,  C23C16/45546 ,  C23C16/45578

Abstract: A method for forming a layer for a semiconductor process is provided to form an insulation layer with a predetermined thickness by relatively reducing an etch rate in a cleaning process even if a layer is formed at a relatively low temperature. In a first process, first process gas and foregoing gas as one of third and fourth process gases with respect to a process region are supplied while second process gas and following gas as the other of the third and fourth process gases with respect to the process region stop their supply. While the following gas with respect to the process region is supplied, the supply of the foregoing gas and the second process gas with respect to the process region is stopped in a second process. While the second process gas with respect to the process region is supplied, the supply of the first process gas with respect to the process region is stopped in a third process. A cycle alternately including first, second and third processes is repeated several times so that thin films stacked by the cycle are stacked to form an insulation layer with a predetermined thickness. Each cycle can include an intervening process between the second and third processes so that the process region is exhausted while the supply of the first, second, third and fourth process gases with respect to the process region is stopped.

Abstract translation: 提供一种用于形成半导体工艺的层的方法，即使在相对低的温度下形成层，通过相对地减少清洁过程中的蚀刻速率来形成具有预定厚度的绝缘层。 在第一过程中，相对于处理区域，第一工艺气体和作为第三和第四工艺气体之一的前述气体相对于工艺区域被供给，而第二工艺气体和随后的气体作为第三和第四工艺气体中的另一个相对于工艺区域 停止供应 虽然提供了相对于处理区域的以下气体，但是在第二过程中停止了相对于处理区域的上述气体和第二工艺气体的供应。 当提供相对于处理区域的第二工艺气体时，在第三工序中停止相对于工艺区域的第一工艺气体的供给。 交替地包括第一，第二和第三工艺的循环重复几次，使得通过循环堆叠的薄膜被堆叠以形成具有预定厚度的绝缘层。 每个循环可以包括在第二和第三过程之间的中间过程，使得处理区域被耗尽，同时停止相对于处理区域的第一，第二，第三和第四工艺气体的供给。

公开(公告)号：KR101140069B1

公开(公告)日：2012-04-30

申请号：KR1020070088261

申请日：2007-08-31

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 하세베가즈히데 ,  주파오-화 ,  우메자와고오따 ,  가도나가겐따로오 ,  장패리

IPC: H01L21/205

CPC classification number: C23C16/45525 ,  C03C17/225 ,  C03C2217/281 ,  C03C2217/282 ,  C03C2217/283 ,  C03C2218/152 ,  C23C16/30 ,  C23C16/45542 ,  C23C16/45546 ,  C23C16/45578

Abstract: An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding gas or oxynitriding gas, a third process gas containing a boron-containing gas, and a fourth process gas containing a carbon hydride gas. A first step performs supply of the first process gas and a preceding gas, which is one of the third and fourth process gases, while stopping supply of the second process gas and a succeeding gas, which is the other of the third and fourth process gases. A second step performs supply of the succeeding gas, while stopping supply of the second process gas and the preceding gas. A third step performs supply of the second process gas while stopping supply of the first process gas.