公开(公告)号：KR1020070008569A

公开(公告)日：2007-01-17

申请号：KR1020067016437

申请日：2005-02-01

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오미라데이빗엘 ,  루싱크게릿제이 ,  캐브럴스티븐에이치 ,  딥앤서니 ,  와즈다코리 ,  조우레이몬드

IPC: H01L21/683 ,  H01L21/687 ,  H01L21/00

CPC classification number: H01L21/67109 ,  H01J2237/2001

Abstract: A wafer heating assembly is described having a unique heater element for use in a single wafer processing systems. The heating unit includes a carbon wire element encased in a quartz sheath. The heating unit is as contamination-free as the quartz, which permits direct contact to the wafer. The mechanical flexibility of the carbon 'wire' or `braided' structure permits a coil configuration, which permits independent heater zone control across the wafer. The multiple independent heater zones across the wafer can permit temperature gradients to adjust film growth/deposition uniformity and rapid thermal adjustments with film uniformity superior to conventional single wafer systems and with minimum to no wafer warping. The low thermal mass permits a fast thermal response that enables a pulsed or digital thermal process that results in layer-by- layer film formation for improved thin film control. ® KIPO & WIPO 2007

Abstract translation: 描述了具有用于单个晶片处理系统的唯一加热器元件的晶片加热组件。 加热单元包括封装在石英鞘中的碳线元件。 加热单元与石英无污染，允许直接接触晶片。 碳线或“编织”结构的机械灵活性允许线圈配置，其允许跨晶片的独立加热器区域控制。 跨晶片的多个独立的加热器区域可以允许温度梯度调节膜生长/沉积均匀性和快速的热调节，其膜均匀性优于常规单晶片系统，并且最小至无晶片翘曲。 低热质量允许快速的热响应，其实现脉冲或数字热处理，其导致逐层成膜以改善薄膜控制。 ®KIPO＆WIPO 2007