公开(公告)号：KR1020140109291A

公开(公告)日：2014-09-15

申请号：KR1020140023888

申请日：2014-02-28

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 하야시히로유키 ,  다나카스미

IPC: H01L21/67 ,  H01L21/324 ,  H05B6/70 ,  H05B6/80

CPC classification number: H01L21/324 ,  H01L21/67115 ,  H05B6/70 ,  H05B6/80 ,  H05B2206/044

Abstract: A microwave processing apparatus includes a process chamber which receives an object, a support member which touches the object in the process chamber and supports it, and a microwave introduction device which generates microwave for processing the object and introduces it to the process chamber. The microwave processing apparatus further includes a heat absorption layer which is prepared on the surface of the wall of a member which faces the object supported by the support member in the process chamber. The heat absorption layer transmits the microwave and is made of a material with higher emissivity compared to the member facing the object.

Abstract translation: 微波处理装置包括：接收物体的处理室，与处理室中的物体接触并支撑的支撑构件;以及产生用于处理物体并将其引入处理室的微波的微波引入装置。 微波处理装置还包括一个吸热层，该吸热层制备在面向由处理室中的支撑构件支撑的物体的构件的壁的表面上。 与面向物体的构件相比，吸热层透过微波并由具有较高发射率的材料制成。

公开(公告)号：KR1020150038236A

公开(公告)日：2015-04-08

申请号：KR1020157004574

申请日：2013-06-11

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 이케다다로 ,  야마시타쥰 ,  홍석형 ,  시모무라고우지 ,  하야시히로유키

IPC: H01L21/324 ,  H05B6/64 ,  H01L21/263 ,  H01L21/683

CPC classification number: H05B6/806 ,  H01L21/324 ,  H01L21/2636 ,  H01L21/683 ,  H05B6/64

Abstract: 마이크로파가열처리장치(1)의지지장치(4)는, 처리용기(2)의저부(13)의거의중앙을관통하여처리용기(2)의외부까지연장되는관 형상의샤프트(14)와, 샤프트(14)의상단부근에있어서거의수평방향으로마련된유전체판(15)과, 유전체판(15)의주연부에착탈가능하게장착된지지부재로서의복수의지지핀(16)과, 회전구동부(17)와, 승강구동부(18)를갖고있다. 유전체판(15)은, 웨이퍼 W와이간한상태로웨이퍼 W와처리용기(2)의저부(13)의사이에개재되고, 웨이퍼 W의아래쪽에있어서의마이크로파의상태를변화시키는것에의해웨이퍼 W로의마이크로파흡수를촉진한다.

公开(公告)号：KR1020140118853A

公开(公告)日：2014-10-08

申请号：KR1020140035214

申请日：2014-03-26

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 시모무라고우지 ,  기타가와쥰이치 ,  야마모토노부히코 ,  하야시히로유키 ,  다나카스미

IPC: H01L21/324 ,  H01L21/02

CPC classification number: H05B6/642 ,  H05B6/645 ,  H05B6/80

Abstract: In a heat process heating a substrate to be processed by introducing microwave into a processing container, the substrate is efficiently cooled down. A microwave heating apparatus (1) has a supporter (13) supporting a wafer W in a processing container (10); a microwave introduction unit (11) introducing microwave into the processing container (10); a refrigerant passage (35) formed inside the supporter (13); and a refrigerant supply source (34) supplying refrigerant to the refrigerant passage (35). A surface of the supporter (13), at least supporting the wafer W, is formed of a material of less than 0.005 which is the production of relative dielectric constant and a dielectric loss angle. The refrigerant supplied from the refrigerant supply source (34) is liquid having no electrical polarity.

Abstract translation: 在通过将微波引入处理容器中来加热待处理的基板的热处理中，基板被有效地冷却。 微波加热装置（1）具有在处理容器（10）中支撑晶片W的支撑件（13）。 微波引入单元（11），将微波引入到处理容器（10）中; 形成在所述支架（13）内的制冷剂通路（35） 以及向制冷剂通路（35）供给制冷剂的制冷剂供给源（34）。 至少支撑晶片W的支撑体（13）的表面由小于0.005的材料形成，这是相对介电常数和介电损耗角的产生。 从制冷剂供给源（34）供给的制冷剂是不具有电极性的液体。