公开(公告)号：KR1020100016969A

公开(公告)日：2010-02-16

申请号：KR1020080076643

申请日：2008-08-05

Applicant: 삼성전기주식회사

Inventor： 양주환 ,  양정승 ,  고백순 ,  경제홍

IPC: G02B26/02 ,  G02B6/08

CPC classification number: G02B26/0858 ,  B81B2201/042 ,  G02B26/001 ,  G02B26/02 ,  G09G3/3493

Abstract: PURPOSE: A method for manufacturing optical modulator array is provided to change cross section area of piezoelectric driving body and correct gap height of the upper and lower optical reflection layers. CONSTITUTION: A structure layer is formed in ribbon shape and is separately positioned to have space with a substrate(110) at the center. The structure layer is attached on the substrate and forms array. A piezoelectric driving body is laminated on the structure layer corresponding to plural structure layers. The piezoelectric driving body comprises a piezoelectric layer. The upper optical reflection layer is laminated at the center of the structure layer. The upper optical reflection layer reflects incident light. A lower optical reflection layer is laminate on the substrate and reflects incident light.

Abstract translation: 目的：提供一种制造光调制器阵列的方法，以改变压电驱动体的横截面面积，并校正上，下光反射层的间隙高度。 结构：结构层形成为带状，并且分开地定位成具有在中心的基底（110）的空间。 结构层附着在基片上并形成阵列。 在与多个结构层对应的结构层上层压压电驱动体。 压电驱动体包括压电层。 上部光反射层层压在结构层的中心。 上部光反射层反射入射光。 下部光反射层层叠在基板上并反射入射光。

公开(公告)号：KR100714637B1

公开(公告)日：2007-05-07

申请号：KR1020060012596

申请日：2006-02-09

Applicant: 삼성전기주식회사

Inventor： 홍석윤 ,  고백순

IPC: H01L33/12 ,  H01L33/02

Abstract: 기판 손상을 방지할 수 있는 수직구조 발광 다이오드 제조방법을 제공한다. 본 발명에 따른 수직구조 발광 다이오드 제조방법은, 성장용 기판 상에 n형 클래드층, 활성층, p형 클래드층 및 p측 전극을 순차적으로 형성하는 단계와; 상기 p측 전극이 형성된 결과물을 복수의 개별 칩 구조물로 분리하는 단계와; 상기 p측 전극이 접합면을 향하도록 상기 복수의 칩 구조물을 도전성 기판 상에 접합하는 단계와; 상기 도전성 기판에 접합된 상기 복수의 칩 구조물로부터 상기 성장용 기판을 제거하는 단계와; 상기 n형 클래드층 상에 n측 전극을 형성하는 단계와; 상기 도전성 기판을 개별 발광 소자로 분리하는 단계를 포함한다.
LED, 발광 다이오드, 수직구조

Abstract translation: 提供了一种能够防止衬底损坏的垂直结构发光二极管制造方法。 根据本发明的垂直结构发光二极管的制造方法，形成n型覆层，有源层，p型包覆层和基材依次用生长在p侧电极; 将形成有所述p侧电极的所得物分离成多个单独的芯片结构; 将多个芯片结构键合在导电衬底上，使得p侧电极面对键合表面; 从结合到导电衬底的多个芯片结构中去除生长衬底; 在n型包层上形成n侧电极; 并且将导电衬底分成单独的发光器件。

公开(公告)号：KR1020070118403A

公开(公告)日：2007-12-17

申请号：KR1020060052479

申请日：2006-06-12

Applicant: 삼성전기주식회사

Inventor： 고백순 ,  안세환 ,  류영호

IPC: H01L33/40

Abstract: A nitride-based semiconductor light emitting device is provided to stabilize thermally ohmic characteristics by forming an n-type electrode of a multilayer structure having a nickel layer on an n-type nitride layer. A p-type nitride semiconductor layer(140) is formed on a lower surface of a p-type electrode(150). An active layer(130) is formed on a lower surface of the p-type nitride semiconductor layer. An n-type nitride semiconductor layer(120) is formed on a lower surface of the active layer. An n-type gallium nitride substrate(110) is formed on a lower surface of the n-type nitride semiconductor layer. An n-type electrode(200) of a multilayer structure is formed on a lower surface of the n-type gallium nitride substrate. A top layer of the n-type electrode is formed with a nickel layer(210).

Abstract translation: 提供一种氮化物基半导体发光器件，通过在n型氮化物层上形成具有镍层的多层结构的n型电极来稳定热欧姆特性。 p型氮化物半导体层（140）形成在p型电极（150）的下表面上。 在p型氮化物半导体层的下表面上形成有源层（130）。 在有源层的下表面上形成n型氮化物半导体层（120）。 n型氮化镓衬底（110）形成在n型氮化物半导体层的下表面上。 在n型氮化镓衬底的下表面上形成多层结构的n型电极（200）。 n型电极的顶层形成有镍层（210）。

公开(公告)号：KR100631419B1

公开(公告)日：2006-10-04

申请号：KR1020050106853

申请日：2005-11-09

Applicant: 삼성전기주식회사

Inventor： 한재호 ,  고백순 ,  전동민 ,  강필근

IPC: H01L33/02 ,  H01L21/46

Abstract: A method for manufacturing a GaN LED is provided to improve surface roughness of sides of the LED by scribing the sides of the LED using a micro diamond wheel. An n-type clad layer(203), an active layer(204) and a p-type clad layer(205) are sequentially formed on a sapphire substrate(201). The n-type clad layer is exposed by mesa-etching the p-type clad layer, the active layer and the n-type clad layer. A p-type electrode(207) and an n-type electrode(208) are formed on the p-type clad layer and the n-type clad layer respectively, thereby forming an LED wafer. By scribing the LED wafer using a micro diamond wheel, each LED device(200a) is formed.

Abstract translation: 提供一种用于制造GaN LED的方法，以通过使用微型金刚石砂轮刻划LED的侧面来改善LED侧面的表面粗糙度。 在蓝宝石衬底（201）上依次形成n型覆盖层（203），有源层（204）和p型覆盖层（205）。 通过台面蚀刻p型覆盖层，有源层和n型覆盖层来暴露n型覆盖层。 分别在p型覆盖层和n型覆盖层上形成p型电极（207）和n型电极（208），由此形成LED晶片。 通过使用微型金刚石砂轮刻划LED晶片，形成每个LED器件（200a）。

公开(公告)号：KR100631416B1

公开(公告)日：2006-10-04

申请号：KR1020050106855

申请日：2005-11-09

Applicant: 삼성전기주식회사

Inventor： 류영호 ,  황해연 ,  고백순 ,  안세환

IPC: H01L33/12 ,  H01L33/02

Abstract: A method for manufacturing a vertically structured GaN LED is provided to prevent crack of a semiconductor layer by using an adhesive layer made of photoresist instead of a conventional metal and by using a wet-etching process instead of a dicing or scriber process. A light emitting structure(120) including an n-type GaN semiconductor layer(121), an active layer(122) and a p-type GaN semiconductor layer(123) is formed on a transparent substrate. A plurality of p-type electrodes(150) spaced apart from each other are formed on the light emitting structure. A unit LED is formed by dicing the light emitting structure. A plated seed layer is formed on the p-type electrode. A silicon substrate(190) having a hole to expose the plated seed layer is formed on the resultant structure. An electroplating layer(210) is then formed without covering the surface of the silicon substrate. The n-type GaN semiconductor layer is exposed by removing the transparent substrate. N-type electrodes(180) are formed on the exposed n-type GaN semiconductor layer, respectively. The silicon substrate is then removed by a wet-etching process.

Abstract translation: 提供一种用于制造垂直构造的GaN LED的方法，以通过使用由光致抗蚀剂制成的粘合剂层而不是常规金属并且通过使用湿法蚀刻处理而不是切割或划线处理来防止半导体层的破裂。 包括n型GaN半导体层（121），有源层（122）和p型GaN半导体层（123）的发光结构（120）形成在透明基板上。 在发光结构上形成彼此间隔开的多个p型电极（150）。 单元LED通过切割发光结构而形成。 在p型电极上形成电镀籽晶层。 在所得到的结构上形成具有用于暴露镀敷晶种层的孔的硅衬底（190）。 然后形成电镀层（210）而不覆盖硅衬底的表面。 通过去除透明衬底来暴露n型GaN半导体层。 N型电极（180）分别形成在暴露的n型GaN半导体层上。 然后通过湿蚀刻工艺去除硅衬底。