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公开(公告)号：KR100850780B1
公开(公告)日：2008-08-06
申请号：KR1020070049633
申请日：2007-05-22
Applicant: 삼성전기주식회사
IPC: H01L33/14 , H01L33/02 , H01L21/324
Abstract: A method for forming a nitride semiconductor light emitting device is provided to decompose Mg and H from each other within a p type nitride semiconductor layer at low thermal processing temperature by using a hydrogen absorption property of a Pd element. An n type nitride semiconductor layer(120), an active layer(130), a p type nitride layer(140) are sequentially formed on a substrate(110). A Pd/Zn alloy layer(200) is formed on the residual region except for a p type electrode region of the p type nitride semiconductor layer. A thermal process for the p type nitride semiconductor layer including the Pd/Zn alloy layer is performed. The Pd/Zn alloy layer is removed from the p type nitride semiconductor layer. An upper surface of the n type nitride semiconductor layer is partially exposed by mesa-etching partially the p type nitride semiconductor layer, the active layer, and the n type nitride semiconductor layer. An n type electrode is formed on the exposed part of the n type nitride semiconductor layer. A p type electrode is formed on the p type electrode region except for the Pd/Zn alloy layer.
Abstract translation: 提供一种形成氮化物半导体发光器件的方法，通过使用Pd元素的氢吸收特性，在低热处理温度下，在p型氮化物半导体层内分解Mg和H。 在衬底（110）上依次形成n型氮化物半导体层（120），有源层（130），p型氮化物层（140）。 在除p型氮化物半导体层的p型电极区域之外的残留区域上形成Pd / Zn合金层（200）。 进行包括Pd / Zn合金层的p型氮化物半导体层的热处理。 从p型氮化物半导体层去除Pd / Zn合金层。 通过部分地蚀刻p型氮化物半导体层，有源层和n型氮化物半导体层，部分地露出n型氮化物半导体层的上表面。 n型电极形成在n型氮化物半导体层的露出部分上。 除了Pd / Zn合金层之外，在p型电极区域上形成p型电极。
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公开(公告)号：KR1020070072826A
公开(公告)日：2007-07-05
申请号：KR1020060127330
申请日：2006-12-13
Applicant: 삼성전기주식회사
Abstract: A GaN type light emitting diode device and a method for manufacturing the same are provided to simplify a manufacturing process and improve a yield by forming simultaneously a transparent electrode and a protective layer without performing an etch process. An n type GaN layer(111) is formed on a substrate(100). An active layer(113) is formed on a predetermined region of the n type GaN layer. A p type GaN layer(115) is formed on the active layer. A transparent electrode(120) is formed on the p type GaN layer. A p type electrode(140) is formed on the transparent electrode. An n type electrode(130) is formed on the n type GaN layer on which the active layer is not formed. A protective layer(150) is formed on a resultant structure between the transparent electrode and the n type GaN layer. The protective layer is formed with a plasma-oxidized transparent layer.
Abstract translation: 提供一种GaN型发光二极管器件及其制造方法，以简化制造工艺并且通过同时形成透明电极和保护层而不进行蚀刻工艺来提高成品率。 在衬底（100）上形成n型GaN层（111）。 在n型GaN层的预定区域上形成有源层（113）。 在有源层上形成p型GaN层（115）。 在p型GaN层上形成透明电极（120）。 在透明电极上形成p型电极（140）。 在不形成有源层的n型GaN层上形成n型电极（130）。 在透明电极和n型GaN层之间的合成结构上形成保护层（150）。 保护层由等离子体氧化的透明层形成。
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公开(公告)号：KR100675217B1
公开(公告)日：2007-01-29
申请号：KR1020050073574
申请日：2005-08-11
Applicant: 삼성전기주식회사
Abstract: A method of manufacturing a light emitting diode package is provided to improve a photo efficiency and to simplify manufacturing processes by forming a reflective member in the package. A portion of a lead frame is inserted into a package. The lead frame is composed o a pair of electrodes. A light emitting diode chip(25) is mounted on a reflective member(50). The reflective member is formed like a metallic foil type structure. The reflective member is inserted into the package. At this time, the reflective member is naturally folded in the package. The chip and the pair of electrodes are connected with each other by using a wire(23). A molding material(29) is filled in the package, so that the reflective member is fixed to an inner wall of the package.
Abstract translation: 提供一种制造发光二极管封装的方法，以通过在封装中形成反射构件来提高光电效率并简化制造工艺。 引线框的一部分插入包装中。 引线框由一对电极组成。 发光二极管芯片（25）安装在反射构件（50）上。 反射部件形成为金属箔型结构。 反射构件被插入到包装中。 此时，反射构件自然地折叠在包装中。 芯片和一对电极通过使用导线（23）彼此连接。 模制材料（29）被填充到封装中，使得反射构件被固定到封装的内壁。
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公开(公告)号：KR100650189B1
公开(公告)日：2006-11-27
申请号：KR1020050090319
申请日：2005-09-28
Applicant: 삼성전기주식회사
Abstract: A high brightness nitride based semiconductor light emitting device is provided to improve a current spreading effect and to prevent the loss of light reflected from a reflective electrode by forming the reflective electrode and a transparent electrode in parallel on a nitride semiconductor layer. An N type nitride semiconductor layer(120) is formed on a substrate(110). An active layer(130) is formed on the N type nitride semiconductor layer. A P type nitride semiconductor layer(140) is formed on the active layer. A reflective electrode(180) is formed on the P type nitride semiconductor layer. A transparent electrode(150) is formed on the P type nitride semiconductor layer parallel with the reflective electrode. A P type bonding pad(165) is formed on the reflective electrode. An N type electrode(170) is formed on the N type nitride semiconductor layer. An N type bonding pad(175) is formed on the N type electrode.
Abstract translation: 提供了一种高亮度氮化物基半导体发光器件，以通过在氮化物半导体层上并联形成反射电极和透明电极来改善电流扩散效果并防止从反射电极反射的光的损失。 在衬底（110）上形成N型氮化物半导体层（120）。 有源层（130）形成在N型氮化物半导体层上。 P型氮化物半导体层（140）形成在有源层上。 反射电极（180）形成在P型氮化物半导体层上。 透明电极（150）形成在与反射电极平行的P型氮化物半导体层上。 P型键合焊盘（165）形成在反射电极上。 在N型氮化物半导体层上形成N型电极（170）。 N型焊盘（175）形成在N型电极上。
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公开(公告)号：KR100635157B1
公开(公告)日：2006-10-17
申请号：KR1020050084006
申请日：2005-09-09
Applicant: 삼성전기주식회사
IPC: H01L33/36
Abstract: A nitride-based semiconductor light emitting device is provided to reduce heating value and to improve light extraction efficiency by using p-type and n-type electrodes having a multi-layer structure. An n-type nitride semiconductor layer(120) is formed on a substrate(110). An active layer(130) is formed on a predetermined region on the n-type nitride semiconductor layer. A p-type nitride semiconductor layer(140) is formed on the active layer. A p-type electrode(160) is formed on the p-type nitride semiconductor layer. An n-type electrode(170) is formed on the n-type nitride semiconductor layer where the active region is not formed. An ohmic contact layer(310), aluminum or silver containing a compound layer(320), and a degradation preventing layer(330) are sequentially layered on the p-type electrode and the n-type electrode.
Abstract translation: 提供氮化物基半导体发光器件以通过使用具有多层结构的p型和n型电极来降低热值并提高光提取效率。 在衬底（110）上形成n型氮化物半导体层（120）。 有源层（130）形成在n型氮化物半导体层上的预定区域上。 在有源层上形成p型氮化物半导体层（140）。 在p型氮化物半导体层上形成p型电极（160）。 在未形成有源区的n型氮化物半导体层上形成n型电极（170）。 在p型电极和n型电极上依次层叠欧姆接触层（310），包含化合物层（320）的铝或银和劣化防止层（330）。
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Patent Agency Ranking
公开(公告)号：KR100817275B1
公开(公告)日：2008-03-27
申请号：KR1020060100296
申请日：2006-10-16
Applicant: 삼성전기주식회사
CPC classification number: H01L2224/32257 , H01L2224/45139 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
Abstract: An LED(light emitting diode) package is provided to minimize the loss of light caused by absorption or scattering of a package by mounting an LED chip in an LED chip mounting space part defined in a leadframe made of a conductive reflection member. A leadframe(50) is made of a pair of lead terminals, having a space part(50a) for defining an LED chip mounting space on the upper surface of the pair of lead terminal. A part of the leadframe is received in a package(20) having a radiation window opened to radiate light. An LED chip(60) is mounted in the upper space part of the leadframe in the package. The LED chip is electrically connected to the leadframe by a wire(70). A molding material(80) protects the LED chip and the wire, filled in the package. The spacer part of the leadframe is made of a groove having a minimum depth for burying the LED chip. The leadframe can be made of a conductive reflection member.
Abstract translation: 提供LED（发光二极管）封装，以通过将LED芯片安装在由导电反射构件制成的引线框中的LED芯片安装空间部分中来最小化由封装的吸收或散射引起的光的损失。 引线框架（50）由一对引线端子制成，具有用于在一对引线端子的上表面上限定LED芯片安装空间的空间部分（50a）。 引线框架的一部分被接收在具有打开以辐射光的辐射窗口的封装（20）中。 LED芯片（60）安装在封装中的引线框架的上部空间部分中。 LED芯片通过导线（70）电连接到引线框架。 成型材料（80）保护填充在包装中的LED芯片和电线。 引线框架的间隔部分由具有用于掩埋LED芯片的最小深度的凹槽制成。 引线框架可以由导电反射构件制成。
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公开(公告)号：KR100769720B1
公开(公告)日：2007-10-24
申请号：KR1020060100294
申请日：2006-10-16
Applicant: 삼성전기주식회사
IPC: H01L33/48
CPC classification number: H01L2224/16245 , H01L2924/15156 , H01L2924/181
Abstract: A high-brightness light emitting device with a function of preventing electrostatic discharge damage is provided to prevent damage of the device due to electrostatic discharge shock by using an ESD shock protection element. A lead frame(50) has a pair of lead terminals(51,52). A package(10) receives a portion of the lead frame, and has a reflection window. An ESD shock protection element is mounted in a space on an upper surface of the lead frame, and an LED chip(30) is mounted on the upper surface of the lead frame to cover the space in such a way that the LED chip is directly isolated from the ESD protection element. A molding material(20) is filled in the package to protect the LED chip.
Abstract translation: 提供了具有防止静电放电损坏的功能的高亮度发光装置，以通过使用ESD防震元件来防止由于静电放电冲击造成的装置损坏。 引线框架（50）具有一对引线端子（51,52）。 包装（10）接收引线框架的一部分，并且具有反射窗口。 ESD冲击保护元件安装在引线框架的上表面上的空间中，并且LED芯片（30）安装在引线框架的上表面上以覆盖空间，使得LED芯片直接 与ESD保护元件隔离。 封装中填充成型材料（20）以保护LED芯片。
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公开(公告)号：KR100675208B1
公开(公告)日：2007-01-29
申请号：KR1020060104444
申请日：2006-10-26
Applicant: 삼성전기주식회사
IPC: H01L33/40
Abstract: A high brightness nitride based semiconductor light emitting device is provided to maximize a light emissive area and to improve a current spread efficiency by using a TCO(Transparent Conducting Oxide) as a current spread layer. An N type nitride semiconductor layer is formed on a substrate. An active layer is formed on the N type nitride semiconductor layer. A P type nitride semiconductor layer is formed on the active layer. A P type electrode(150) is formed on the P type nitride semiconductor layer. A P type bonding metal(160) is formed on the P type electrode. A current spread layer(190) is formed on the N type nitride semiconductor layer. The current spread layer is made of a TCO. The TCO has lower sheet resistance and resistivity than those of an ITO(Indium Tin Oxide). An N type electrode(170) is formed on the current spread layer.
Abstract translation: 提供高亮度氮化物基半导体发光器件以通过使用TCO（透明导电氧化物）作为电流扩展层来最大化发光面积并提高电流扩散效率。 在衬底上形成N型氮化物半导体层。 在N型氮化物半导体层上形成有源层。 在有源层上形成P型氮化物半导体层。 P型电极（150）形成在P型氮化物半导体层上。 P型接合金属（160）形成在P型电极上。 在N型氮化物半导体层上形成电流扩展层（190）。 当前传播层由TCO制成。 TCO具有比ITO（氧化铟锡）低的薄层电阻和电阻率。 在电流扩展层上形成N型电极（170）。
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公开(公告)号：KR100815226B1
公开(公告)日：2008-03-20
申请号：KR1020060102970
申请日：2006-10-23
Applicant: 삼성전기주식회사
IPC: H01L33/02
Abstract: A method for fabricating a gallium nitride-based LED is provided to prevent an LED from being broken or damaged in cutting an LED wafer into unit LED sizes by cutting an LED wafer into unit LED sizes through a creak of a scribing groove caused by ultrasonic or thermal impact. An n-type clad layer(203), an active layer(204), a p-type clad layer(205) and a transparent electrode(206) are sequentially formed on a sapphire substrate(201). The p-type clad layer, the active layer, the n-type clad layer and the transparent electrode are partially mesa-etched to expose a part of the n-type clad layer. A p-type bonding electrode(207) and an n-type electrode(208) are respectively formed on the transparent electrode and the n-type clad layer to form an LED wafer(200). Scribing grooves(400) are formed at an interval of a unit LED size in the lower surface of the sapphire substrate of the LED wafer. Ultrasonic is applied to the LED wafer having the scribing grooves to cut the LED wafer into unit LED sizes. The scribing groove can be made of one selected from a group of a diamond tip, a diamond wheel and a laser scriber.
Abstract translation: 提供了一种制造氮化镓基LED的方法，以通过由超声波引起的划线槽的吱吱作用将LED晶片切割成单位LED尺寸来防止LED在将LED晶片切割成单位LED尺寸时被破坏或损坏 热冲击。 在蓝宝石衬底（201）上依次形成n型覆盖层（203），有源层（204），p型覆盖层（205）和透明电极（206）。 对p型覆盖层，有源层，n型覆盖层和透明电极进行部分蚀刻蚀刻以露出n型覆盖层的一部分。 分别在透明电极和n型覆盖层上形成p型结合电极（207）和n型电极（208），形成LED晶片（200）。 在LED晶片的蓝宝石衬底的下表面中以单位LED尺寸的间隔形成刻划槽（400）。 将超声波施加到具有划线槽的LED晶片，以将LED晶片切割成单位LED尺寸。 划线槽可以由金刚石刀头，金刚石砂轮和激光划刻器组成的一个制成。
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