公开(公告)号：KR100850780B1

公开(公告)日：2008-08-06

申请号：KR1020070049633

申请日：2007-05-22

Applicant: 삼성전기주식회사

Inventor： 김선운 ,  박성주 ,  김자연 ,  권민기 ,  이동주 ,  한재호

IPC: H01L33/14 ,  H01L33/02 ,  H01L21/324

CPC classification number: H01L33/40 ,  H01L33/32 ,  H01L33/42

Abstract: A method for forming a nitride semiconductor light emitting device is provided to decompose Mg and H from each other within a p type nitride semiconductor layer at low thermal processing temperature by using a hydrogen absorption property of a Pd element. An n type nitride semiconductor layer(120), an active layer(130), a p type nitride layer(140) are sequentially formed on a substrate(110). A Pd/Zn alloy layer(200) is formed on the residual region except for a p type electrode region of the p type nitride semiconductor layer. A thermal process for the p type nitride semiconductor layer including the Pd/Zn alloy layer is performed. The Pd/Zn alloy layer is removed from the p type nitride semiconductor layer. An upper surface of the n type nitride semiconductor layer is partially exposed by mesa-etching partially the p type nitride semiconductor layer, the active layer, and the n type nitride semiconductor layer. An n type electrode is formed on the exposed part of the n type nitride semiconductor layer. A p type electrode is formed on the p type electrode region except for the Pd/Zn alloy layer.

Abstract translation: 提供一种形成氮化物半导体发光器件的方法，通过使用Pd元素的氢吸收特性，在低热处理温度下，在p型氮化物半导体层内分解Mg和H。 在衬底（110）上依次形成n型氮化物半导体层（120），有源层（130），p型氮化物层（140）。 在除p型氮化物半导体层的p型电极区域之外的残留区域上形成Pd / Zn合金层（200）。 进行包括Pd / Zn合金层的p型氮化物半导体层的热处理。 从p型氮化物半导体层去除Pd / Zn合金层。 通过部分地蚀刻p型氮化物半导体层，有源层和n型氮化物半导体层，部分地露出n型氮化物半导体层的上表面。 n型电极形成在n型氮化物半导体层的露出部分上。 除了Pd / Zn合金层之外，在p型电极区域上形成p型电极。

公开(公告)号：KR100809221B1

公开(公告)日：2008-02-29

申请号：KR1020070010088

申请日：2007-01-31

Applicant: 삼성전기주식회사

Inventor： 김선운 ,  박성주 ,  박일규 ,  김자연 ,  권민기 ,  김제원 ,  김동준

IPC: H01L33/02 ,  H01L21/205

Abstract: A method for fabricating a nitride semiconductor light emitting device using surfactant is provided to obtain a p-type nitride semiconductor layer with an excellent layer quality and an increased hole density by supplying surfactant of at least one of Sb, Bi, As, P, Ti, Se, Te, Po, Ge, Sn and Pb when or right before a p-type nitride semiconductor layer is grown. In a period of time to stop temporarily the growth process between a process of growing an active layer and a process of growing a p-type nitride semiconductor layer, in a period of time to grow a p-type nitride semiconductor layer or in a period of time to stop temporarily the growth process during a process of growing the p-type nitride semiconductor layer, surfactant including at least one of Sb, Bi, As, P, Ti, Se, Te, Po, Ge, Sn and Pb is supplied to a reactor to be absorbed to the surface of a nitride semiconductor(S2). The surfactant can be supplied as a source of a gas state to the inside of the reactor.

Abstract translation: 提供一种使用表面活性剂制造氮化物半导体发光器件的方法，通过提供Sb，Bi，As，P，Ti中的至少一种的表面活性剂来获得具有优异的层质量和增加的空穴密度的p型氮化物半导体层 ，Se，Te，Po，Ge，Sn和Pb，或者在p型氮化物半导体层生长之前。 在一段时间内暂时停止生长活性层的过程和生长p型氮化物半导体层的过程之间的生长过程，在生长p型氮化物半导体层的时间段内或在时间段 的时间，以在生长p型氮化物半导体层的过程中暂时停止生长过程，提供包括Sb，Bi，As，P，Ti，Se，Te，Po，Ge，Sn和Pb中的至少一种的表面活性剂 到要被吸收到氮化物半导体的表面的反应器（S2）。 可以将表面活性剂作为气体状态的源供应到反应器的内部。