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公开(公告)号：KR100683115B1
公开(公告)日：2007-02-15
申请号：KR1020050048185
申请日：2005-06-07
Applicant: 삼성전자주식회사
Abstract: 투과전자현미경용 시편 및 이의 제조방법은 일측면에 소정의 폭을 가지며 서로 평행한 방향으로 연장하는 다수의 분석 라인들을 갖는 예비 분석 시편을 마련한 후, 상기 예비 분석 시편의 분석 라인면들의 연장 방향과 수직한 방향으로 확장되도록 상기 예비 분석 시편을 연마하여 분석 시편으로 형성한다. 상기 예비 분석시편은 패턴 웨이퍼를 적어도 네 개 구비한다. 따라서 상기 다수의 패턴 웨이퍼를 동시에 분석할 수 있다.
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公开(公告)号：KR1020100091436A
公开(公告)日：2010-08-19
申请号：KR1020090010622
申请日：2009-02-10
Applicant: 삼성전자주식회사
IPC: C09K3/14
CPC classification number: H01L21/31053 , C09G1/02
Abstract: PURPOSE: A solution composition for a chemical mechanical polishing is provided to control the generation of a dishing, and to reduce the generation of defects including a scratch. CONSTITUTION: A solution composition for a chemical mechanical polishing contains amino acid or an amino acid derivative, a surfactant, and an additive accelerating the swelling of an abrasive particle. The additive is capable of controlling the viscosity of the polishing solution. The amino acid or amino acid derivative contain proline, lysine, arginine, N-methylglycine, glycine, or alanine. The surfactant is a non-ionic surfactant.
Abstract translation: 目的：提供用于化学机械抛光的溶液组合物，以控制凹陷的产生，并减少包括划痕在内的缺陷的产生。 构成：用于化学机械抛光的溶液组合物含有氨基酸或氨基酸衍生物，表面活性剂和加速磨粒的溶胀的添加剂。 添加剂能够控制抛光溶液的粘度。 氨基酸或氨基酸衍生物含有脯氨酸，赖氨酸，精氨酸，N-甲基甘氨酸，甘氨酸或丙氨酸。 表面活性剂是非离子表面活性剂。
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公开(公告)号：KR1020070068013A
公开(公告)日：2007-06-29
申请号：KR1020050129637
申请日：2005-12-26
Applicant: 삼성전자주식회사
IPC: H01L27/146 , H01L21/20
CPC classification number: H01L27/14687 , H01L21/02381
Abstract: A method for fabricating a semiconductor device is provided to prevent warpage of a first wafer by attaching a second wafer to the back surface of a first wafer and by growing a silicon epitaxial layer on the front surface of the first wafer. An oxide layer(110) can be formed on the back surface of a first wafer(100). To the back surface of the first wafer doped with impurities of first density, a second wafer doped with impurities of second density lower than the first density is attached. A silicon epitaxial layer(140) is grown on the front surface of the first wafer by using the second wafer as a diffusion preventing layer for preventing the impurities doped into the first wafer from being diffused.
Abstract translation: 提供了一种用于制造半导体器件的方法，通过将第二晶片附着到第一晶片的背面并通过在第一晶片的前表面上生长硅外延层来防止第一晶片的翘曲。 可以在第一晶片（100）的背面上形成氧化物层（110）。 在掺杂有第一密度的杂质的第一晶片的背表面上，附着掺杂有低于第一密度的第二密度的杂质的第二晶片。 通过使用第二晶片作为扩散防止层，在第一晶片的前表面上生长硅外延层（140），以防止掺杂到第一晶片中的杂质被扩散。
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Patent Agency Ranking4.发明授权
公开(公告)号：KR100819557B1
公开(公告)日：2008-04-07
申请号：KR1020060077512
申请日：2006-08-17
Applicant: 삼성전자주식회사
IPC: H01L21/3063 , H01L21/306
CPC classification number: H01L21/32134 , C09K13/06 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0361 , H01L2224/03901 , H01L2224/03912 , H01L2224/0401 , H01L2224/05027 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05184 , H01L2224/05572 , H01L2224/05582 , H01L2224/05644 , H01L2224/1147 , H01L2224/13005 , H01L2224/13099 , H01L2224/13144 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/00014 , H01L2224/05552
Abstract: 금속 식각용액, 이를 이용하는 금속 식각방법 및 이를 이용하는 반도체 제품의 제조방법을 제공한다. 이 반도체 제품의 제조방법은 금속 패드를 갖는 기판 상에 씨드층을 형성하는 것을 포함한다. 상기 씨드층을 갖는 기판 상에 상기 씨드층을 노출시키는 개구부를 갖는 희생막을 형성한다. 금 전기도금을 진행하여 상기 희생막의 개구부를 채우는 금 범프(gold bummp)를 형성한다. 상기 희생막을 제거한다. 질산, 염산, 유기산 및 물로 이루어진 식각용액을 이용하여 상기 금 범프에 의해 노출된 상기 씨드층을 식각한다. 여기서, 상기 씨드층은 금 원소를 갖는 금속막으로 형성될 수 있다.
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5.发明公开
公开(公告)号：KR1020080016009A
公开(公告)日：2008-02-21
申请号：KR1020060077512
申请日：2006-08-17
Applicant: 삼성전자주식회사
IPC: H01L21/3063 , H01L21/306
CPC classification number: H01L21/32134 , C09K13/06 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0361 , H01L2224/03901 , H01L2224/03912 , H01L2224/0401 , H01L2224/05027 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05184 , H01L2224/05572 , H01L2224/05582 , H01L2224/05644 , H01L2224/1147 , H01L2224/13005 , H01L2224/13099 , H01L2224/13144 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/00014 , H01L2224/05552
Abstract: An etching solution for etching a metal layer, an etching method using the same, and a method of fabricating a semiconductor product using the same are provided to enhance an etching speed of the metal layer having Au without increasing contents of nitric acid and hydrochloric acid. A metal etching solution includes nitric acid, hydrochloric acid, organic acid and water, in which an amount of the organic acid is less than an amount of the nitric acid. A content of the nitric acid is about 20 to 40 wt%, a content of the hydrochloric acid is about 3 to 18 wt%, and a content of the organic acid is about 0.1 to 3 wt%. The organic acid is at least one selected from ascorbic acid or fatty acid. The fatty acid is at least one selected from oxalic acid, citric acid, acetylsalicylic acid, acetic acid, propionic acid, butyric acid, glycolic acid, formic acid, lactic acid, malic acid, succinic acid, or tartaric acid.
Abstract translation: 提供用于蚀刻金属层的蚀刻溶液，使用其的蚀刻方法以及使用其的制造半导体产品的方法，以提高具有Au的金属层的蚀刻速度，而不增加硝酸和盐酸的含量。 金属蚀刻溶液包括硝酸，盐酸，有机酸和水，其中有机酸的量少于硝酸的量。 硝酸的含量为约20〜40重量％，盐酸的含量为约3〜18重量％，有机酸的含量为约0.1〜3重量％。 有机酸是选自抗坏血酸或脂肪酸中的至少一种。 脂肪酸是选自草酸，柠檬酸，乙酰水杨酸，乙酸，丙酸，丁酸，乙醇酸，甲酸，乳酸，苹果酸，琥珀酸或酒石酸中的至少一种。
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公开(公告)号：KR100770217B1
公开(公告)日：2007-10-26
申请号：KR1020060052659
申请日：2006-06-12
Applicant: 삼성전자주식회사
CPC classification number: H01L21/31133 , G03F7/425 , H01L24/11 , H01L24/12 , H01L2224/03912 , H01L2224/0401 , H01L2224/1147 , H01L2224/11472 , H01L2224/13099 , H01L2224/13144 , H01L2224/16 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01016 , H01L2924/01022 , H01L2924/01027 , H01L2924/01033 , H01L2924/01046 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/19041
Abstract: A composition for removing photoresist, and a method for forming a bump electrode by using the composition are provided to remove a novolac photoresist effectively within a short time at a low temperature without the damage of a polyimide layer. A composition for removing photoresist comprises 22-46 wt% of an amine compound containing a hydroxyl group; 52-75 wt% of a polar organic solvent containing N or S as a hetero atom; 0.3-2 wt% of an alkyl ammonium hydroxide; and the balance of water. Preferably the polar organic solvent comprises at least one selected from the group consisting of N-methyl-2-pyrrolidone, dimethyl acetamide and dimethyl sulfoxide; and the amine compound containing a hydroxyl group comprises hydroxylamine, monoethanolamine or their mixture.
Abstract translation: 提供了用于除去光致抗蚀剂的组合物以及通过使用该组合物形成凸起电极的方法，用于在低温下在短时间内有效地除去酚醛清漆光致抗蚀剂，而不会损害聚酰亚胺层。 用于除去光致抗蚀剂的组合物包含22-46重量％的含有羟基的胺化合物; 52-75重量％的含有N或S作为杂原子的极性有机溶剂; 0.3-2重量％的烷基氢氧化铵; 和水的平衡。 优选极性有机溶剂包括选自N-甲基-2-吡咯烷酮，二甲基乙酰胺和二甲基亚砜中的至少一种; 含有羟基的胺化合物包括羟胺，单乙醇胺或它们的混合物。
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公开(公告)号：KR1020140092626A
公开(公告)日：2014-07-24
申请号：KR1020130004909
申请日：2013-01-16
Applicant: 삼성전자주식회사 , 가부시키가이샤 아데카
Inventor： 박명범 , 강윤덕 , 김기현 , 조윤정 , 최정식 , 아리에토모코 , 모리시마유지 , 우선아 , 토요다쇼헤이 , 김범준 , 즈시타케히로 , 요시이타카히로 , 타나카신이치
Abstract: The present invention relates to a copper electroplating solution, a copper electroplating apparatus, and a method for forming a copper bump. According to the present invention, the copper electroplating solution comprises: an electrolyte aqueous solution containing water soluble copper salt, sulfide ions, and chloride ions; an accelerator, which is an organic matter containing sulfur, for accelerating copper reduction reaction; an inhibitor, which is a polyester compound, for inhibiting copper reduction reaction; and a leveler containing water soluble polymer having nitrogen dissolved as a cation in the electrolyte aqueous solution. In a plating process, the leveler supplies a nitrogen cation, and so, the local increase of current density is inhibited. The plating rate can be increased without damage to the flatness of the copper bump.
Abstract translation: 铜电镀液，铜电镀装置及铜凸点的形成方法技术领域本发明涉及铜电镀液，铜电镀装置及铜凸点的形成方法。 根据本发明，铜电镀液包括：含有水溶性铜盐，硫化物离子和氯离子的电解质水溶液; 加速剂，其是含硫的有机物质，用于加速铜还原反应; 用于抑制铜还原反应的抑制剂，其为聚酯化合物; 以及含有溶解在电解质水溶液中作为阳离子的氮的水溶性聚合物的矫直机。 在电镀过程中，矫平机提供氮阳离子，因此电流密度的局部增加被抑制。 可以增加电镀速率而不损坏铜凸块的平坦度。
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公开(公告)号：KR1020060129567A
公开(公告)日：2006-12-18
申请号：KR1020050048185
申请日：2005-06-07
Applicant: 삼성전자주식회사
Abstract: A specimen for TEM(Transmission Electron Microscope) and a method for manufacturing the same are provided to reduce a time for analyzing pattern wafers by analyzing simultaneously at least four or more pattern wafers. A specimen for TEM includes sectional specimens having analyzing sides which are arranged in parallel with each other. A plurality of analyzing lines(180) have predetermined width and are extended in a parallel direction. An analyzing region(150) is extended along a predetermined direction vertical to the extending direction of the analyzing lines. A peripheral region(160) is formed around the analyzing region. Each of the analyzing lines is attached to each other so that a pair of analyzing sides are opposite to each other.
Abstract translation: 提供了用于TEM（透射电子显微镜）的试样及其制造方法，以通过同时分析至少四个或更多个图案晶片来减少分析图案晶片的时间。 用于TEM的试样包括具有彼此平行布置的分析侧的截面试样。 多条分析线（180）具有预定的宽度并沿平行方向延伸。 分析区域（150）沿着与分析线路的延伸方向垂直的预定方向延伸。 在分析区域周围形成周边区域（160）。 每条分析线彼此附接，使得一对分析侧彼此相对。
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