스퍼터링장치의 가스 공급 시스템
    1.
    发明公开
    스퍼터링장치의 가스 공급 시스템 无效
    用于喷射装置的气体供应系统

    公开(公告)号:KR1020060127544A

    公开(公告)日:2006-12-13

    申请号:KR1020050048594

    申请日:2005-06-07

    Inventor: 고영학

    CPC classification number: C23C14/3492 C23C14/541 C23C14/564 C23C14/568

    Abstract: A gas supply system for sputtering apparatus that can uniformly maintain the temperature of a wafer on heater tables by mounting constant pressure maintenance parts on sub-supply pipes, thereby constantly maintaining the pressure of gas supplied into respective chambers is provided. A gas supply system(51) for sputtering apparatus comprises: a bottle(53) for storing a prescribed gas; a chamber part(B) having chambers on which heater tables are mounted, wherein a wafer is placed on the heater tables; a main supply pipe(61) for connecting the bottle and the chamber part to supply the gas from the bottle to the chamber part; sub-supply pipes(65) for connecting the main supply pipe and the respective chambers; and a first constant pressure maintenance part(66) installed on the sub-supply pipes respectively to uniformly maintain the temperature of a wafer on the respective heater tables by constantly maintaining a pressure value of gas outputted into the respective chambers irrespective of an inputted pressure value of gas supplied into the sub-supply pipes.

    Abstract translation: 一种用于溅射装置的气体供应系统,其可以通过在副供应管上安装恒定压力维持部件,从而不断保持供应到各个室中的气体的压力,从而均匀地保持加热器台上的晶片的温度。 一种用于溅射装置的气体供应系统(51)包括:用于存储规定气体的瓶子(53); 具有安装有加热器台的室的室部分(B),其中将晶片放置在加热器台上; 用于连接瓶子和室部分以将气体从瓶子供应到室部分的主供应管道(61) 用于连接主供应管和各个室的副供应管(65) 以及分别安装在副供给管上的第一恒压维持部(66),通过不管输入的压力值如何,不断维持输出到各室的气体的压力值,使晶片的温度均匀地保持在各加热台上 供应到副供应管道的气体。

    반도체 제조장치의 샤워헤드
    2.
    发明公开
    반도체 제조장치의 샤워헤드 无效
    用于半导体制造设备的淋浴头

    公开(公告)号:KR1020080000387A

    公开(公告)日:2008-01-02

    申请号:KR1020060058170

    申请日:2006-06-27

    Inventor: 고영학 윤성준

    Abstract: A shower head for a semiconductor manufacturing apparatus is provided to prevent particles from remaining on a wafer by uniformly spraying a deposition gas on an overall surface of the wafer. A shower head sprays a gas on a wafer and a double-layer shower plate. A gas spray hole is formed on the double-layer shower plate. The double-layer shower plate is arranged toward a spraying direction of the gas. The double-layer shower plate includes first and second shower plates. The first shower plate(120) constitutes a lower portion of a main body. The second shower plate(140) is relatively smaller than the first shower plate and arranged on the first shower plate. The first and second shower plates have circular shapes. Centers of the first and second shower plates are aligned on the same line.

    Abstract translation: 提供了一种用于半导体制造装置的喷头,用于通过在晶片的整个表面上均匀喷射沉积气体来防止颗粒残留在晶片上。 淋浴喷头在晶片和双层淋浴板上喷射气体。 在双层淋浴板上形成气体喷射孔。 双层喷淋板朝向气体的喷射方向配置。 双层淋浴板包括第一和第二淋浴板。 第一喷淋板(120)构成主体的下部。 第二喷淋板140比第一喷淋板相对小,并配置在第一喷淋板上。 第一和第二淋浴板具有圆形。 第一和第二淋浴板的中心在同一直线上对齐。

    스퍼터링 공정용 척의 온도 조절 장치
    3.
    发明公开
    스퍼터링 공정용 척의 온도 조절 장치 无效
    用于控制爆破过程的卡盘温度的装置

    公开(公告)号:KR1020010057708A

    公开(公告)日:2001-07-05

    申请号:KR1019990061094

    申请日:1999-12-23

    Inventor: 고영학

    CPC classification number: C23C14/541 C23C14/3492 C23C14/50

    Abstract: PURPOSE: An apparatus for controlling the temperature of a chuck for the sputtering process is provided to uniformly maintain the temperature of heat that a wafer receives during metallic film deposition by controlling the flow rate of cooling water. CONSTITUTION: The apparatus comprises a target consisting of a metallic material to be deposited and provided into the inner side of a vacuum chamber (10); a chuck (40) which is positioned oppositely directed to the target (20) and on which a wafer (50) is put and fixed; a cooling water supplying part (60) equipped with a cooling water supplying pipe (62) and a cooling water return pipe (64) for circulating cooling water into the chuck (40); a flow rate control means (80) attached on the cooling water supplying pipe (62) for controlling the flow rate of cooling water; and a flow meter (90) attached on the cooling water return pipe (64) for checking the flow rate of cooling water.

    Abstract translation: 目的:提供一种用于控制用于溅射工艺的卡盘的温度的装置,以通过控制冷却水的流量来均匀地保持晶片在金属成膜期间接收的热量的温度。 构成:该装置包括由金属材料构成的靶材,其被沉积并设置在真空室(10)的内侧; 位于与靶(20)相反方向定位并在其上放置和固定晶片(50)的卡盘(40) 配备有冷却水供给管(62)的冷却水供给部(60)和将冷却水循环到卡盘(40)中的冷却水返回管64。 安装在冷却水供给管(62)上的流量控制装置(80),用于控制冷却水的流量; 以及安装在冷却水返回管(64)上的流量计(90),用于检查冷却水的流量。

    돔 쉴드의 플레이크 방지 방법
    4.
    发明公开
    돔 쉴드의 플레이크 방지 방법 无效
    防止镜面破裂的方法

    公开(公告)号:KR1020020069695A

    公开(公告)日:2002-09-05

    申请号:KR1020010010018

    申请日:2001-02-27

    Abstract: PURPOSE: A method for preventing flakes of a dome shield is provided to prevent a wafer from being contaminated by particles like etch byproducts, by coating an aluminum layer on the dome shield. CONSTITUTION: The surface of the dome shield(12) is coated with an aluminum layer to prevent the etch byproducts(14) fixed to the surface of the dome shield from being desorbed from the surface of the dome shield. A dummy wafer coated with aluminum is introduced to the inside of a plasma etch chamber and is dry-etched by using radio frequency so that the surface of the dome shield is coated with the aluminum separated from the surface of the dummy wafer.

    Abstract translation: 目的:提供一种防止圆顶罩的薄片的方法,以防止晶片被诸如蚀刻副产物的颗粒污染,通过在圆顶罩上涂覆铝层。 构成:圆顶罩(12)的表面涂覆有铝层,以防止固定在圆顶罩表面上的蚀刻副产物(14)从圆顶罩的表面脱离。 将涂覆有铝的虚拟晶片引入等离子体蚀刻室的内部,并通过使用射频进行干蚀刻,使得圆顶罩的表面涂覆有与虚设晶片表面分离的铝。

    웨이퍼 클램프 및 이를 구비하는 반도체 제조 장비
    5.
    发明公开
    웨이퍼 클램프 및 이를 구비하는 반도체 제조 장비 无效
    具有相同功能的半导体器件的封装和装置

    公开(公告)号:KR1020060036686A

    公开(公告)日:2006-05-02

    申请号:KR1020040085755

    申请日:2004-10-26

    Inventor: 고영학

    CPC classification number: H01L21/68721 H01L21/68757

    Abstract: 공정 불량을 줄일 수 있는 링클램프 및 이를 구비하는 반도체 제조 장비를 개시한다. 상기 링 클램프는 웨이퍼 직경보다 큰 직경과 일정한 두께의 링(ring) 형태를 갖는 외부 테두리부; 상기 외부 테두리부 안쪽으로 신장되되 상기 외부 테두리부 보다 얇은 두께의 링 형태를 갖으며 복수개의 개구부를 구비하는 중간 테두리부; 상기 중간 테두리부 안쪽으로 신장되되 상기 외부 테두리부 보다 얇으나 상기 중간 테두리부보다 두꺼운 두께의 링 형태를 갖는 내부 테두리부; 및 상기 내부 테두리부로부터 안쪽으로 돌출되어 웨이퍼의 에지 부분과 접하되 서로 이격되는 복수개의 접합부를 구비한다. 상기 링클램프는 바람직하게는 스테인레스강으로 이루어진다.
    링 클램프

    반도체장치 제조용 물리기상증착장치의 콜리미터
    6.
    发明公开
    반도체장치 제조용 물리기상증착장치의 콜리미터 无效
    用于制造半导体器件的物理蒸气沉积装置的收集器

    公开(公告)号:KR1020000021909A

    公开(公告)日:2000-04-25

    申请号:KR1019980041189

    申请日:1998-09-30

    Inventor: 성동혁 고영학

    Abstract: PURPOSE: A collimator of a physical vapor deposition apparatus for fabricating a semiconductor device is to enhance the adhesion force with metal particles deposited on the collimator and thus prevent the deposited metal particles from being separated from the collimator. CONSTITUTION: A collimator comprises a plurality of holes formed at a circular plate. A hole wall (51) between the holes has a rounded end portion. The collimator is established in a physical vapor deposition apparatus to allow metal particles separated from a target to be regularly incident through the hole onto a surface of a wafer. The rounded end portion of the hole wall of the collimator prevents the metal particles that are incident to the collimator and are attached to the collimator from being dropped onto the wafer.

    Abstract translation: 目的:用于制造半导体器件的物理气相沉积设备的准直器是增加与沉积在准直器上的金属颗粒的粘附力,从而防止沉积的金属颗粒与准直器分离。 构成:准直器包括形成在圆板上的多个孔。 孔之间的孔壁(51)具有圆形的端部。 在物理气相沉积设备中建立准直器,以允许从目标物分离的金属颗粒通过孔有规律地入射到晶片的表面上。 准直器的孔壁的圆形端部防止入射到准直器并附着到准直器的金属颗粒落在晶片上。

    냉각 장치를 구비한 고온 반응실
    7.
    发明公开
    냉각 장치를 구비한 고온 반응실 无效
    具有冷却装置的高温反应室

    公开(公告)号:KR1020000024899A

    公开(公告)日:2000-05-06

    申请号:KR1019980041698

    申请日:1998-10-02

    Abstract: PURPOSE: A high temperature reaction chamber having cooling apparatus is provided to improve a work efficiency by decreasing a cooling time of a high temperature reaction chamber necessary for performing a next process. CONSTITUTION: A refrigerant for cooling a heat generating unit(116) of a high temperature reaction chamber(112) is used as a nitrogen gas. A tube(123) in which the nitrogen gas flows is penetrated to the heat generating unit(116). Both ends of the tube(124) is connected to the outside of the high temperature reaction chamber(112). One end of the tube(124) is connected to a nitrogen providing unit(124). The nitrogen gas flow in the one end of the tube(124) for cooling the heat generating unit(116). The nitrogen gas which cools the heat generating unit(116) is exhausted in other end of the tube(124). The heat generating unit(116) generates a heat by a current provided from a power supplier(114) located to the outside of the high temperature reaction chamber(112). The heat generated in the heat generating unit(116) is transmitted to a wafer(100) by a heat transmitting unit(118).

    Abstract translation: 目的:提供一种具有冷却装置的高温反应室,通过降低进行下一工序所需的高温反应室的冷却时间来提高工作效率。 构成:将用于冷却高温反应室(112)的发热体(116)的制冷剂用作氮气。 其中氮气流过的管(123)被穿透到发热单元(116)。 管(124)的两端连接到高温反应室(112)的外部。 管(124)的一端连接到氮提供单元(124)。 用于冷却发热单元(116)的管(124)的一端中的氮气流动。 冷却发热单元(116)的氮气在管(124)的另一端排出。 发热单元(116)通过从位于高温反应室(112)的外部的供电器(114)提供的电流产生热量。 在发热单元(116)中产生的热量通过热传递单元(118)传输到晶片(100)。

    스퍼터링 장치에서 사용하는 클램프
    8.
    发明公开
    스퍼터링 장치에서 사용하는 클램프 无效
    用于溅射装置的夹具

    公开(公告)号:KR1020000019585A

    公开(公告)日:2000-04-15

    申请号:KR1019980037761

    申请日:1998-09-14

    Abstract: PURPOSE: A clamp prevents a supporting part of the clamp from contacting with a side of a wafer. CONSTITUTION: A clamp(110) prevents to contact with a wafer(112) after sputtering process by changing the structure of the clamp fixing the wafer placed on a heating plate(114). The wafer is heated after fixed by the clamp, and placed on the heating plate in a reactor for performing the sputtering process. The clamp comprises a cylindrical supporting part(116) projected vertically on one side of a ring-shaped circular plate. The inside diameter of the supporting part is larger than the diameter of the wafer by more than 1 mm.

    Abstract translation: 目的:夹具防止夹具的支撑部分与晶片的一侧接触。 构成:夹具(110)通过改变固定放置在加热板(114)上的晶片的夹具的结构,防止在溅射工艺之后与晶片(112)接触。 通过夹具固定晶片,并在用于进行溅射处理的反应器中放置在加热板上。 夹具包括在环形圆板的一侧垂直投影的圆柱形支撑部分(116)。 支撑部分的内径大于晶片的直径大于1mm。

    랜을 이용한 웨이퍼 검사 시스템
    9.
    发明公开
    랜을 이용한 웨이퍼 검사 시스템 无效
    使用局域网的波浪检测系统

    公开(公告)号:KR1020000001940A

    公开(公告)日:2000-01-15

    申请号:KR1019980022427

    申请日:1998-06-15

    Abstract: PURPOSE: A wafer examining system is provided to monitor at a FAB and an office at the same time when examining a wafer to share the examination result and to correctly understand the situation. CONSTITUTION: The wafer examining system comprises: a microscope(10) making an operator examine and check the shape of a pattern that is formed on a wafer(16); a charge coupled device(CCD) camera(12) recognizing the pattern as an image; a computer(18) transmitted the image signal of the CCD camera; and a computer connected with the computer and a local area network(LAN)(14)

    Abstract translation: 目的:提供晶圆检查系统,以便在检查晶圆以分享检查结果并正确了解情况的同时在FAB和办公室进行监控。 构成:晶片检查系统包括:显微镜(10),使操作者检查并检查形成在晶片(16)上的图案的形状; 将图案识别为图像的电荷耦合器件(CCD)相机(12); 计算机(18)发送CCD摄像机的图像信号; 以及与计算机连接的计算机和局域网(LAN)(14)

    스퍼터링 장치용 콜리메이터 코아의 구조
    10.
    发明公开
    스퍼터링 장치용 콜리메이터 코아의 구조 无效
    用于溅射装置的准直器芯的结构

    公开(公告)号:KR1019980020177A

    公开(公告)日:1998-06-25

    申请号:KR1019960038538

    申请日:1996-09-05

    Abstract: 본 발명은 스퍼터링 공정시 콜리메이터(collimator) 코아의 하측부 에지에 금속 덩어리가 적층되는 것을 방지하도록 콜리메이터 코아의 하단부를 곡형으로 형성한 스퍼터링 장치용 콜리메이터 코아의 구조에 관한 것이다.
    본 발명의 목적은 콜리메이터 코아의 하측부에 타겟의 입자들이 적층되어 금속 덩어리를 형성하는 것을 방지하여 스퍼터링 공정의 신뢰성을 향상시키도록 한 스퍼터링 장치용 콜리메이터 코아의 구조를 제공하는데 있다.
    본 발명은 콜리메이터 코아의 하단부 에지를 구형 또는 포물선 형태와 같은 곡형으로 형성하여 타겟으로부터 튀어나온 입자들이 코아 에지에 덩어리로 적층되는 것을 감소시키고 이로 인해 금속 덩어리의 떨어짐에 의한 웨이퍼의 결함 발생을 방지하여 스퍼터링 공정의 신뢰성을 향상시킨다.

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