公开(公告)号：KR1020110081136A

公开(公告)日：2011-07-13

申请号：KR1020110062937

申请日：2011-06-28

Applicant: 삼성전자주식회사 ,  미츠비시 마테리알 가부시키가이샤

Inventor： 호리이히데키 ,  모리사또루 ,  하용호 ,  박정희 ,  기노시따게이 ,  노나까소헤이

IPC: H01L21/20 ,  G11B7/2433 ,  H01L21/8247 ,  C23C14/16

CPC classification number: H01J37/3429 ,  C23C14/16 ,  C23C14/34 ,  G11B7/2433 ,  H01L45/06

Abstract: PURPOSE: A phase change recording film having high electrical resistance and a sputtering target for forming a phase change recording film are provided to improve the characteristic of a phase change memory and reduce manufacturing costs by reducing a current for wiring and erasing operation. CONSTITUTION: A phase change memory is comprised of Ge of 17-25%, Sb of 17-25%, C of 0.5-6% and Te of the rest of them. After crystallization, measured non resistance is 5×10-2~5×101Ω·cm through four point prove inspection. Additionally, the phase change memory is comprised of the sum of Al and Si of 0.1%-13%, C of 0.2-8%, B of 0.2-12%, or the sum of Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu of 0.1-10%, and Te of the rest of them.

Abstract translation: 目的：提供具有高电阻的相变记录膜和用于形成相变记录膜的溅射靶，以改善相变存储器的特性，并通过减少布线和擦除操作的电流来降低制造成本。 构成：相变记忆由17-25％的Ge，17-25％的Sb，0.5-6％的C和其余的Te组成。 结晶后，测得的非电阻为5倍，10-2〜5次;101Ω·cm，经四点检验。 另外，相变存储器由Al和Si的总和为0.1％-13％，C为0.2-8％，B为0.2-12％，或者Ce，Pr，Nd，Pm，Sm， Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb和Lu为0.1-10％，Te为余量。

公开(公告)号：KR101157150B1

公开(公告)日：2012-06-22

申请号：KR1020110072893

申请日：2011-07-22

Applicant: 삼성전자주식회사

Inventor： 호리이히데키 ,  모리사또루 ,  하용호 ,  박정희 ,  기노시따게이 ,  노나까소헤이

IPC: H01L21/8247 ,  H01L27/115 ,  H01L21/203

CPC classification number: H01L45/1625 ,  C23C14/3414 ,  G11B7/00454 ,  G11B7/243 ,  G11B2007/2431 ,  G11B2007/24312 ,  G11B2007/24314 ,  G11B2007/24328 ,  H01L45/06 ,  H01L45/144

Abstract: 전기 저항이 높은 상변화 기록막 및 그 상변화 기록막을 형성하기 위한 스퍼터링 타겟을 제공한다. 원자% 로 Ge: 15～30%, Sb: 15～30% 를 함유하고, 추가로 (1) Al 및 Si 중의 1종 또는 2종을 합계로 0.1～13%, (2) C를 0.2～8%, (3) B를 0.2~12%, 혹은 (4) Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu 중의 1종 또는 2종 이상을 합계로: 0.1~10%, 로 이루어진 그룹 중 어느 하나를 함유하고, 잔부가 Te 및 불가피한 불순물로 이루어지는 조성을 갖는 전기 저항이 높은 상변화 기록막, 및 그 막을 형성하기 위한 스퍼터링 타겟.

公开(公告)号：KR1020110091844A

公开(公告)日：2011-08-16

申请号：KR1020110072893

申请日：2011-07-22

Applicant: 삼성전자주식회사

Inventor： 호리이히데키 ,  모리사또루 ,  하용호 ,  박정희 ,  기노시따게이 ,  노나까소헤이

IPC: H01L21/8247 ,  H01L27/115 ,  H01L21/203

CPC classification number: H01L45/1625 ,  C23C14/3414 ,  G11B7/00454 ,  G11B7/243 ,  G11B2007/2431 ,  G11B2007/24312 ,  G11B2007/24314 ,  G11B2007/24328 ,  H01L45/06 ,  H01L45/144 ,  H01L45/143

Abstract: PURPOSE: A phase change recording layer with high electric resistance and a sputtering target for forming the same are provided to reduce the property of a phase change type nonvolatile memory layer and reduce manufacturing costs by reducing a current in a record erasing operation. CONSTITUTION: A phase change recording layer has a variable electric resistance property. The phase change recording layer includes Ge of 17 to 25%, Sb of 17 to 25%, and C of 0.5 to 6%. The rest of the phase change recording layer is made of Te and impurities. The resistivity of the phase change recording layer by is 5 x 10^-2 to 5 x 10^1 Ω Cm.

Abstract translation: 目的：提供一种具有高电阻的相变记录层和用于形成其的溅射靶，以降低相变型非易失性存储层的性能，并且通过减少记录擦除操作中的电流来降低制造成本。 构成：相变记录层具有可变的电阻特性。 相变记录层的Ge为17〜25％，Sb为17〜25％，C为0.5〜6％。 相变记录层的其余部分由Te和杂质构成。 相变记录层的电阻率为5×10 ^ -2至5×10 ^ 1ΩCm。

公开(公告)号：KR1020050004137A

公开(公告)日：2005-01-12

申请号：KR1020040051756

申请日：2004-07-02

Applicant: 미츠비시 마테리알 가부시키가이샤 ,  삼성전자주식회사

Inventor： 호리이히데키 ,  모리사또루 ,  하용호 ,  박정희 ,  기노시따게이 ,  노나까소헤이

IPC: H01L21/20 ,  B41M5/26 ,  G11B7/243

CPC classification number: H01L45/1625 ,  C23C14/3414 ,  G11B7/00454 ,  G11B7/243 ,  G11B2007/2431 ,  G11B2007/24312 ,  G11B2007/24314 ,  G11B2007/24328 ,  H01L45/06 ,  H01L45/144

Abstract: PURPOSE: A phase change recording layer having a high electrical resistance and a sputtering target of forming the same are provided to decrease an electric current at the time of writing and erasing operation by increasing an electrical resistance of the same. CONSTITUTION: A phase change recording layer has a high electrical resistance. The phase change recording layer includes Ge of 15 to 30 atom percent, Sb of 15 to 25 atom percent, one or both of Al and Si of a total 0.1 to 13 atom percent, and the balance of Te and impurities. The phase change recording layer has a specific resistance, which is about 5*10¬-12 to 5*10¬1 ¥Ø*cm.

Abstract translation: 目的：提供具有高电阻的相变记录层和形成该高电阻的溅射靶，以通过增加其写入和擦除操作来减小电流。 构成：相变记录层具有高电阻。 相变记录层包括15至30原子％的Ge，15至25原子％的Sb，Al和Si中的一种或两种，总计为0.1至13原子％，余量为Te和杂质。 相变记录层的电阻率约为5×10 -12至5×10 -1×Ø* cm。