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公开(公告)号：KR101814022B1
公开(公告)日：2018-01-04
申请号：KR1020120008381
申请日：2012-01-27
Applicant: 삼성전자주식회사
CPC classification number: H01L23/29 , H01L21/561 , H01L21/563 , H01L23/3114 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/81 , H01L24/83 , H01L24/94 , H01L25/0657 , H01L25/50 , H01L2224/131 , H01L2224/16146 , H01L2224/29017 , H01L2224/29036 , H01L2224/29099 , H01L2224/2929 , H01L2224/293 , H01L2224/33051 , H01L2224/33505 , H01L2224/73104 , H01L2224/81191 , H01L2224/81201 , H01L2224/83104 , H01L2224/83191 , H01L2224/83986 , H01L2224/84201 , H01L2224/9211 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06541 , H01L2924/181 , H01L2224/81 , H01L2924/00014 , H01L2224/83 , H01L2924/0665 , H01L2924/01014 , H01L2924/014 , H01L2924/00012
Abstract: 반도체패키지를제공한다. 반도체패키지는, 제1 반도체소자, 제1 반도체소자와이격되어마주하는제2 반도체소자, 제1 및제2 반도체소자들을전기적으로연결하는연결구조물들및 연결구조물들을보호하며제1 및제2 반도체소자들사이를접착시키는보호구조물을포함한다. 보호구조물은, 평면적으로볼 때상기연결구조물들을완전히감싸는제1 물질막및 제1 물질막을감싸는제2 물질막을포함한다.
Abstract translation: 提供半导体封装。 半导体封装包括第一半导体元件，背对第一半导体元件的第二半导体元件，用于电连接第一和第二半导体元件的连接结构和连接结构，以及第一和第二半导体元件 并有保护结构用于粘附保护层。 保护结构包括当在平面图中观察时完全包围连接结构的第一材料膜和围绕第一材料膜的第二材料膜。
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公开(公告)号：KR1020130126191A
公开(公告)日：2013-11-20
申请号：KR1020120050076
申请日：2012-05-11
Applicant: 삼성전자주식회사
CPC classification number: H01L23/49811 , H01L21/56 , H01L21/561 , H01L21/563 , H01L21/76898 , H01L23/3114 , H01L23/3128 , H01L23/481 , H01L24/94 , H01L24/97 , H01L25/0657 , H01L29/0657 , H01L2224/14181 , H01L2224/16145 , H01L2224/16146 , H01L2224/16148 , H01L2224/16225 , H01L2224/16238 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06517 , H01L2225/06565 , H01L2924/15156 , H01L2924/15311 , H01L2924/181 , H01L2924/18161 , H01L2224/81 , H01L2924/00
Abstract: A semiconductor package includes a first semiconductor chip, a second semiconductor chip, and a sealing member. The first semiconductor chip includes a substrate having a first surface and a second surface facing the first surface and an opening part with a predetermined depth from the second surface, though electrodes of which a part is exposed though the lower surface of the opening part and extended in the thickness direction of the substrate from the first surface. The second chip is formed in the opening part and mounted on the lower surface of the opening part. The sealing member covers the second semiconductor chip in the opening part.
Abstract translation: 半导体封装包括第一半导体芯片，第二半导体芯片和密封构件。 第一半导体芯片包括具有第一表面和面向第一表面的第二表面的基板和具有来自第二表面的预定深度的开口部分，尽管其部分通过开口部分的下表面暴露并延伸 在基板的厚度方向上。 第二芯片形成在开口部中并安装在开口部的下表面上。 密封构件在开口部中覆盖第二半导体芯片。
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公开(公告)号：KR1020130087235A
公开(公告)日：2013-08-06
申请号：KR1020120008381
申请日：2012-01-27
Applicant: 삼성전자주식회사
CPC classification number: H01L23/29 , H01L21/561 , H01L21/563 , H01L23/3114 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/81 , H01L24/83 , H01L24/94 , H01L25/0657 , H01L25/50 , H01L2224/131 , H01L2224/16146 , H01L2224/29017 , H01L2224/29036 , H01L2224/29099 , H01L2224/2929 , H01L2224/293 , H01L2224/33051 , H01L2224/33505 , H01L2224/73104 , H01L2224/81191 , H01L2224/81201 , H01L2224/83104 , H01L2224/83191 , H01L2224/83986 , H01L2224/84201 , H01L2224/9211 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06541 , H01L2924/181 , H01L2224/81 , H01L2924/00014 , H01L2224/83 , H01L2924/0665 , H01L2924/01014 , H01L2924/014 , H01L2924/00012
Abstract: PURPOSE: A semiconductor package is provided to improve the reliability of the semiconductor package by suppressing a void in a molding structure by an extruded first material layer. CONSTITUTION: A first semiconductor device (100) includes a substrate (102) and a penetration electrode (104). A second semiconductor device (200) is separated from the first semiconductor device. A connection structure (110,210) electrically connects the first and second semiconductor devices. A protection structure (300) is arranged between the first and second semiconductor devices and protects the connection structure. The protection structure includes a first material layer (302) and a second material layer (304) which surrounds the first material layer.
Abstract translation: 目的：提供半导体封装以通过挤压的第一材料层抑制模制结构中的空隙来提高半导体封装的可靠性。 构成：第一半导体器件（100）包括衬底（102）和穿透电极（104）。 第二半导体器件（200）与第一半导体器件分离。 连接结构（110,210）电连接第一和第二半导体器件。 保护结构（300）布置在第一和第二半导体器件之间并保护连接结构。 保护结构包括围绕第一材料层的第一材料层（302）和第二材料层（304）。
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公开(公告)号：KR1020080003994A
公开(公告)日：2008-01-09
申请号：KR1020060062403
申请日：2006-07-04
Applicant: 삼성전자주식회사
IPC: C09J7/00 , C09J123/08
CPC classification number: B32B27/32 , C09J2203/326 , C09J2423/046 , C09J2423/106 , C09J2431/006
Abstract: A polyolefin-based dicing film for laser sawing is provided to prevent generation of pick-up errors caused by the heat from laser beams leading to melting of a dicing film or damages on a dicing film. A polyolefin-based dicing film(50) has a transmission of 80-99% and a reflectance of 1-20% to the light having a wavelength of 355 nm. The polyolefin includes polyethylene, polypropylene, polytetrafluoroethylene, polymethylpentene, or polyvinyl acetate. Preferably, the polyolefin includes a polypropylene having a weight average molecular weight of 200,000-1,500,000, or a blend containing a low-density polyethylene having a weight average molecular weight of 100,000-2,000,000 and ethylene vinyl acetate having a weight average molecular weight of 50,000-1,500,000 in a weight ratio of 30:70-65:35.
Abstract translation: 提供了一种用于激光锯切的聚烯烃切割膜，用于防止由导致切割膜熔化的激光束的热量引起的拾取误差的产生或切割膜上的损坏。 聚烯烃类切割膜（50）对波长355nm的光具有80-99％的透射率和1-20％的反射率。 聚烯烃包括聚乙烯，聚丙烯，聚四氟乙烯，聚甲基戊烯或聚乙酸乙烯酯。 优选地，聚烯烃包括重均分子量为200,000-1,500,000的聚丙烯，或包含重均分子量为100,000-2,000,000的低密度聚乙烯和重均分子量为50,000〜 重量比为30：70-65：35的1,500,000。
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Patent Agency Ranking
公开(公告)号：KR1020120087651A
公开(公告)日：2012-08-07
申请号：KR1020110008990
申请日：2011-01-28
Applicant: 삼성전자주식회사
IPC: H01L23/31 , H01L21/56 , H01L25/065 , H01L25/10 , H01L25/07
CPC classification number: H01L25/0657 , H01L21/563 , H01L23/3128 , H01L23/3135 , H01L24/13 , H01L24/16 , H01L24/73 , H01L24/97 , H01L25/0655 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/0557 , H01L2224/13025 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/16235 , H01L2224/16265 , H01L2224/17181 , H01L2224/32145 , H01L2224/32225 , H01L2224/45139 , H01L2224/48227 , H01L2224/73204 , H01L2224/73207 , H01L2224/73253 , H01L2224/73265 , H01L2224/97 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06586 , H01L2225/06589 , H01L2225/1023 , H01L2225/1058 , H01L2225/1094 , H01L2924/00014 , H01L2924/15311 , H01L2924/181 , H01L2924/18161 , H01L2924/3511 , H01L25/073 , H01L2924/00 , H01L2924/00012 , H01L2224/05552 , H01L2224/81 , H01L2224/83
Abstract: PURPOSE: A semiconductor device and a manufacturing method thereof are provided to increase heat dissipation efficiency by directly contacting an upper side of a second semiconductor substrate and a heat sink to a heat transfer material. CONSTITUTION: A first semiconductor chip includes a first semiconductor substrate(11). A second semiconductor substrate(21) is arranged at a lower portion of the first semiconductor chip. An underfill part(28) covers a sidewall of the first semiconductor chip. A molding part(29) covers the sidewall of the underfill part. The molding part is separated from the first semiconductor chip by the underfill part.
Abstract translation: 目的：提供半导体器件及其制造方法，以通过将第二半导体衬底和散热器的上侧直接接触到传热材料来提高散热效率。 构成：第一半导体芯片包括第一半导体衬底（11）。 第二半导体衬底（21）布置在第一半导体芯片的下部。 底部填充部分（28）覆盖第一半导体芯片的侧壁。 模制部件（29）覆盖底部填充部分的侧壁。 模制部件通过底部填充部分与第一半导体芯片分离。
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公开(公告)号：KR101932495B1
公开(公告)日：2018-12-27
申请号：KR1020120050076
申请日：2012-05-11
Applicant: 삼성전자주식회사
Abstract: 반도체 패키지는 제1 반도체 칩, 제2 반도체 칩 및 밀봉 부재를 포함한다. 상기 제1 반도체 칩은 제1 면 및 상기 제1 면에 반대하는 제2 면을 가지며 상기 제2 면으로부터 소정의 깊이를 갖는 개구부가 형성된 기판, 및 상기 제1 면으로부터 상기 기판의 두께 방향으로 연장하고 상기 개구부의 저면을 통해 일단부가 노출된 다수개의 관통 전극들을 포함한다. 상기 제2 반도체 칩은 상기 개구부 내에 수용되고 상기 개구부의 저면 상에 실장된다. 상기 밀봉 부재는 상기 개구부 내에서 상기 제2 반도체 칩을 덮는다.
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公开(公告)号：KR101906408B1
公开(公告)日：2018-10-11
申请号：KR1020110100767
申请日：2011-10-04
Applicant: 삼성전자주식회사
CPC classification number: H01L25/50 , H01L21/561 , H01L21/568 , H01L23/3128 , H01L23/3135 , H01L23/481 , H01L23/49816 , H01L23/49827 , H01L24/19 , H01L24/20 , H01L24/73 , H01L24/81 , H01L24/96 , H01L24/97 , H01L25/0652 , H01L25/0655 , H01L25/0657 , H01L25/105 , H01L2224/0401 , H01L2224/04105 , H01L2224/0557 , H01L2224/12105 , H01L2224/13025 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48145 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/94 , H01L2224/97 , H01L2225/0651 , H01L2225/06513 , H01L2225/06541 , H01L2225/06548 , H01L2225/06562 , H01L2225/06565 , H01L2225/06586 , H01L2924/00014 , H01L2924/01029 , H01L2924/01327 , H01L2924/07802 , H01L2924/10253 , H01L2924/12042 , H01L2924/1431 , H01L2924/1434 , H01L2924/15311 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/18161 , H01L2924/19104 , H01L2924/19105 , H01L2924/30107 , H01L2924/3511 , H01L2224/81 , H01L2924/00 , H01L2924/00012 , H01L2224/05552
Abstract: 본발명의기술적사상은반도체패키지공정에서핸들링이용이하고워피지발생문제를해결할수 있는반도체패키지및 그제조방법을제공한다. 그반도체패키지는적어도하나의반도체칩이내부밀봉재에의해밀봉된내부패키지; 상기내부패키지가실장되는외부기판; 및상기내부패키지를밀봉하는외부밀봉재;를포함하고, 상기내부밀봉재와외부밀봉재는서로다른모듈러스(Young's modulus)를갖는다.
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公开(公告)号：KR1020130024523A
公开(公告)日：2013-03-08
申请号：KR1020110088022
申请日：2011-08-31
Applicant: 삼성전자주식회사
CPC classification number: H01L24/94 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/73204 , H01L2224/73253 , H01L2224/94 , H01L2924/15311 , H01L2924/16251 , H01L2924/00012 , H01L2224/81 , H01L2924/00
Abstract: PURPOSE: A semiconductor package is provided to protect an active layer by using a double molding layer. CONSTITUTION: A first semiconductor chip(100) is laminated on a package substrate. An inner solder ball(125) electrically connects the package substrate and the first semiconductor chip. A second semiconductor chip(200) is laminated on the first semiconductor chip. An upper molding layer(300) covers the first and the second semiconductor chip. A lower molding layer(130) is formed in the lower surface of the first semiconductor chip.
Abstract translation: 目的：提供半导体封装以通过使用双层成型层来保护有源层。 构成：将第一半导体芯片（100）层叠在封装基板上。 内部焊球（125）电连接封装衬底和第一半导体芯片。 第二半导体芯片（200）层叠在第一半导体芯片上。 上模塑层（300）覆盖第一和第二半导体芯片。 在第一半导体芯片的下表面中形成下成型层（130）。
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公开(公告)号：KR102113201B1
公开(公告)日：2020-05-20
申请号：KR1020150028532
申请日：2015-02-27
Applicant: 삼성전자주식회사
IPC: G06F3/0488 , G06F3/0346
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