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公开(公告)号：KR100688980B1
公开(公告)日：2007-03-08
申请号：KR1020050059283
申请日：2005-07-01
Applicant: 삼성전자주식회사
IPC: H01L21/205
Abstract: 본 발명은 플라즈마 모니터링 장치와 플라즈마 모니터링 방법에 관한 것이다. 본발명에 따른 플라즈마 모니터링 장치는 플라즈마로부터의 광선 빔(light beam)을 감지하는 광학 센서와, 상기 광학 센서가 감지한 광선 빔으로부터 특정 영역 별로 방출 강도를 나타내는 발광분광분석기(emission spectrometer)와, 상기 특정 영역 별로의 방출 강도로부터 특정 물질의 농도변화를 계산하는 데이터 처리부를 포함하는 것을 특징으로 한다. 이에 의해 플라즈마 내에서의 특정 물질의 농도를 실시간으로 관찰할 수 있는 플라즈마 모니터링 장치가 제공된다.
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公开(公告)号：KR1020070009186A
公开(公告)日：2007-01-18
申请号：KR1020050064273
申请日：2005-07-15
Applicant: 삼성전자주식회사
IPC: H01L21/205
CPC classification number: C23C16/45563 , C23C16/455 , C23C16/4585
Abstract: A CVD apparatus is provided to prevent cleaning efficiency from being deteriorated by relatively smoothening a flow or process gas. A reaction space(31) is formed by a chamber body(30) having an upper opening. A shower head(40) distributes process gas to form an RF electrode, installed in the upper opening. An insulator(50) includes an insulation part and a skirt part. An insulation part is interposed between the wall surface of the chamber body and the shower head to mutually insulate the chamber body and the shower head. The skirt part is extended downward from the insulation layer wherein a plurality of process gas exhausting holes(55) are radially formed in the skirt part to scatter the flow of the process gas. A shadow ring(70) is guided to the insulator so as to cover the outer circumferential surface of an object(61) in a manner that avoids formation of a deposition layer on the outer circumferential surface and the lower surface of the object.
Abstract translation: 提供了一种CVD装置，以通过相对平滑流动或处理气体来防止清洁效率劣化。 反应空间（31）由具有上部开口的室主体（30）形成。 淋浴头（40）分配处理气体以形成安装在上部开口中的RF电极。 绝缘体（50）包括绝缘部分和裙部。 在室主体的壁表面和淋浴喷头之间插入有绝缘部分，以使室主体和淋浴头相互绝缘。 裙部从绝缘层向下延伸，其中在裙部中径向形成多个工艺气体排出孔（55），以分散处理气体的流动。 阴影环（70）被引导到绝缘体以便以避免在物体的外周表面和下表面上形成沉积层的方式覆盖物体（61）的外周表面。
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公开(公告)号：KR1020070003364A
公开(公告)日：2007-01-05
申请号：KR1020050059283
申请日：2005-07-01
Applicant: 삼성전자주식회사
IPC: H01L21/205
CPC classification number: H01J37/32972
Abstract: A plasma monitoring apparatus and a method for monitoring a plasma are provided to monitor concentration of a specific material in the plasma in real time. A plasma monitoring apparatus comprises an optical sensor(230) detecting light beam emitted from a plasma, an emission spectrometer(240) representing emission intensity of a special region for the light beam detected by the optical sensor, and a data processing unit computing concentration variations of a specific material based on the emission intensity of the specific region. The data processing unit compares the emission intensity of the specific region with emission intensity of a reference region. A polarized plate is interposed between the optical sensor and the plasma.
Abstract translation: 提供等离子体监测装置和等离子体监测方法，以实时监测等离子体中的特定材料的浓度。 等离子体监测装置包括：检测从等离子体发射的光束的光学传感器（230），表示由光学传感器检测到的光束的特殊区域的发射强度的发射光谱仪（240）;以及数据处理单元，计算浓度变化 基于特定区域的发光强度的特定材料。 数据处理单元将特定区域的发射强度与参考区域的发射强度进行比较。 在光学传感器和等离子体之间插入偏振板。
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公开(公告)号：KR100676824B1
公开(公告)日：2007-02-01
申请号：KR1020050077784
申请日：2005-08-24
Applicant: 삼성전자주식회사
Abstract: A panel transfer apparatus is provided to easily transfer a panel cassette and accurately control a position of the panel cassette by simplifying a process of transferring the panel cassette. A cassette load chamber(30) has a cassette accommodation portion(31) accommodating a panel cassette(25). A stage(40) is provided on the cassette accommodation portion to support the panel cassette. A transfer unit(50) is provided on the cassette receiving portion to transfer the stage between a loading position and an unloading position. A rotation unit(70) is interposed between the transfer unit and the stage to rotate the stage around a transfer direction of the transfer unit. A sensor(60) is provided in the cassette accommodation portion to detect the panel cassette.
Abstract translation: 通过简化传送面板盒的过程，提供面板传送装置以容易地传送面板盒并精确地控制面板盒的位置。 盒装载室（30）具有容纳面板盒（25）的盒容纳部（31）。 一个台架（40）设置在磁带盒容纳部分上以支撑面板磁带盒。 传送单元（50）设置在盒子接收部分上以在载入位置和卸载位置之间传送载物台。 旋转单元（70）插入在传送单元和平台之间以围绕传送单元的传送方向旋转平台。 传感器（60）设置在盒容纳部分中以检测面板盒。
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Patent Agency Ranking
公开(公告)号：KR1020070002218A
公开(公告)日：2007-01-05
申请号：KR1020050057623
申请日：2005-06-30
Applicant: 삼성전자주식회사
IPC: H01L21/205
CPC classification number: C23C16/45565 , C23C16/52
Abstract: A chemical vapor deposition apparatus is provided to uniformly form deposition layers by increasing a flow length of each nozzle hole in a nozzle unit progressively from a center axis line to an outside of a semi-diameter direction of the nozzle hole. A reactor(30) comprises a reactive chamber(31) having a gas inlet hole(33). A reactive gas is supplied to an upper portion of the gas inlet hole. A support(70) supports a target in the reactive chamber. A shower head(40) sprays the reactive gas to the target from the gas inlet hole. The shower head has a nozzle unit(50) where plural nozzle holes(51) are formed. A flow length of a center axis line of the nozzle hole is shorter than an outside of a semi-diameter direction thereof. Outlet ends(55) of the nozzle holes are uniformly separated from the support. Inlet ends(53) of the nozzle holes at the outside of the semi-diameter direction are farther from the support than the center axis line thereof.
Abstract translation: 提供一种化学气相沉积装置以通过将喷嘴单元中的每个喷嘴孔的流动长度逐渐从喷嘴孔的半径方向的中心轴线向外侧逐渐增加来均匀地形成沉积层。 反应器（30）包括具有气体入口孔（33）的反应室（31）。 反应气体被供应到气体入口孔的上部。 支撑件（70）支撑反应室中的目标。 淋浴头（40）从气体入口孔向反应气体喷射反应气体。 淋浴头具有形成有多个喷嘴孔（51）的喷嘴单元（50）。 喷嘴孔的中心轴线的流动长度比其半径方向的外侧短。 喷嘴孔的出口端（55）与支架均匀分离。 在半径方向外侧的喷嘴孔的入口端（53）比支撑体的中心轴线更远。
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公开(公告)号：KR100689847B1
公开(公告)日：2007-03-08
申请号：KR1020050064273
申请日：2005-07-15
Applicant: 삼성전자주식회사
IPC: H01L21/205
Abstract: 본 발명은, 화학기상증착(VCD)장치에 관한 것으로서, 반응공간을 형성하며 상부개구를 갖는 챔버본체와; 상기 상부개구에 설치되어 공정가스를 분배하며 고주파전극을 형성하는 샤워헤드와; 상기 챔버본체의 벽면과 상기 샤워헤드 사이에 개재되어 상호 절연하는 절연부와, 상기 절연부에서 하향 연장되며 공정가스의 흐름이 분산되도록 방사상으로 다수의 공정가스배출공이 형성된 스커트부를 갖는 절연체를 포함하는 것을 특징으로 한다. 이에 의하여, 부품수를 줄여 간단하며 공정가스의 흐름이 비교적 원활하게 이루어 질 수 있는 화학기상증착장치가 제공된다.
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公开(公告)号：KR100686726B1
公开(公告)日：2007-02-26
申请号：KR1020050080836
申请日：2005-08-31
Applicant: 삼성전자주식회사
IPC: H01L21/205
Abstract: A plasma chemical vapor deposition apparatus is provided to effectively disassemble a gas injection part supported on an upper portion of a chamber lead by connecting a chamber body with the chamber lead with a hinge part. A plasma chemical vapor deposition apparatus comprises a chamber body(10) having a desired reaction chamber and an access opening, a gas injection part(30) disposed in the reaction chamber for spraying a deposition gas, and a chamber lead(20) coupled to the chamber body by a first hinge part(90). The hinge part is pivoted between an open position for opening the access opening and a close position for closing the access opening. A cleaning gas supply unit(50) supplies a cleaning gas to the reaction chamber.
Abstract translation: 提供一种等离子体化学气相沉积设备，用于通过利用铰链部分将室体与室引线连接而有效地拆卸支撑在室引线上部的气体注入部分。 一种等离子体化学气相沉积设备包括：具有期望的反应室和进入开口的室主体（10）;布置在反应室中用于喷射沉积气体的气体注入部件（30）;以及室引线（20），耦合到 腔室本体通过第一铰链部分（90）。 铰链部件在用于打开进入开口的打开位置和用于关闭进入开口的关闭位置之间枢转。 清洁气体供应单元（50）将清洁气体供应到反应室。
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公开(公告)号：KR100686724B1
公开(公告)日：2007-02-26
申请号：KR1020050057623
申请日：2005-06-30
Applicant: 삼성전자주식회사
IPC: H01L21/205
Abstract: 본 발명은, 화학기상증착(CVD)장치에 관한 것으로서, 상부에 반응가스가 공급되는 가스유입공을 갖는 반응챔버를 형성하는 반응기와; 상기 반응챔버 내에서 작업물을 지지하는 지지대와; 상기 가스유입공으로부터 반응가스를 상기 작업물에 분사하며, 중심축선으로부터 반경방향의 외측으로 갈수록 유동길이가 길어지도록 마련된 다수의 노즐공이 형성된 노즐유닛을 갖는 샤워헤드를 포함하는 것을 특징으로 한다. 이에 의하여, 증착막이 균일하게 형성될 수 있는 화학기상증착장치가 제공된다.
Abstract translation: 化学气相沉积设备技术领域本发明涉及一种化学气相沉积设备，包括：用于形成具有供应反应气体的气体入口孔的反应室的反应器; 支持反应室中的工作的支撑; 从工件的气体入口孔注入反应性气体，其特征在于：它包括具有多个形成在设置成使得流体长度变长到外部从所述中心轴线的径向方向上的喷嘴单元的喷嘴孔的喷头。 由此，提供了可以均匀地形成蒸镀膜的化学蒸镀装置。
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公开(公告)号：KR1020070008333A
公开(公告)日：2007-01-17
申请号：KR1020050063464
申请日：2005-07-13
Applicant: 삼성전자주식회사
IPC: H01L21/205
CPC classification number: C23C16/45574 , C23C16/45565 , C23C16/509 , C23C16/513
Abstract: A substrate process apparatus is provided to form a carbon thin film of an excellent quality by preventing a flow path from being contaminated. A substrate process apparatus has a reaction space. First reaction gas including hydrocarbon gas is supplied by a first gas supply part. Second reaction gas containing hydrogen is supplied by a second gas supply part. A shower head includes a first flow path and a second flow path. The first reaction gas is supplied to the reaction space by the first flow path, connected to the first gas supply part. The second reaction gas is supplied to the reaction gas, connected to the second gas supply part. The shower head includes a first block, a second block in contact with the reaction space, and a third block in contact with the reaction space wherein at least a part of the third block overlaps the second block.
Abstract translation: 提供一种基板处理装置，通过防止流路被污染而形成质量优良的碳薄膜。 基板处理装置具有反应空间。 包括烃气体的第一反应气体由第一气体供给部供给。 含有氢的第二反应气体由第二气体供给部供给。 淋浴头包括第一流路和第二流路。 第一反应气体通过与第一气体供给部连接的第一流路供给反应空间。 将第二反应气体供给到与第二气体供给部连接的反应气体。 淋浴头包括第一块，与反应空间接触的第二块，以及与反应空间接触的第三块，其中第三块的至少一部分与第二块重叠。
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