公开(公告)号：KR100749056B1

公开(公告)日：2007-08-14

申请号：KR1020060048252

申请日：2006-05-29

Applicant: 삼성전자주식회사

Inventor： 임경춘 ,  임순규 ,  김상갑 ,  이상호

IPC: G02F1/13 ,  H01L21/3065

Abstract: An atmospheric pressure plasma equipment is provided to uniformly perform an etching process using plasma by providing a distance maintaining device that maintains a constant distance between a plasma generating device and a substrate. A stage(20) includes a receiving surface on which a substrate(1) for processing is placed. A plasma generating device(30) is installed on the stage so as to be movable in a perpendicular direction to the receiving surface. A distance maintaining device(50) contacts the stage when the surface is processed while the stage is moving, and thus maintains a constant distance between the plasma generating device and the substrate. A guide device(40) is further provided to guide a movement of the plasma generating device.

Abstract translation: 通过提供维持等离子体产生装置和基板之间的恒定距离的距离维持装置，提供大气压等离子体设备以均匀地执行使用等离子体的蚀刻过程。 台（20）包括其上放置用于处理的基板（1）的接收表面。 等离子体产生装置（30）安装在平台上以便可以在垂直于接收表面的方向上移动。 距离保持装置（50）在载物台移动时对表面进行加工时与载物台接触，从而维持等离子体生成装置与基板之间的恒定距离。 还提供引导装置（40）以引导等离子体生成装置的运动。

公开(公告)号：KR1020070010409A

公开(公告)日：2007-01-24

申请号：KR1020050064948

申请日：2005-07-18

Applicant: 삼성전자주식회사

Inventor： 임경춘 ,  임순규 ,  신영식 ,  이호 ,  유광준

IPC: H01L21/205

CPC classification number: C23C16/466 ,  H01L21/68785

Abstract: A CVD is provided to shorten an interval of standby time for repair and preventive maintenance by relatively rapidly cooling a susceptor. A workpiece is supported by a susceptor body(40) installed in a reaction space. A heater(50) heats the workpiece, installed on the susceptor body. A fluid conduit(60) is installed in the susceptor body wherein a circulation path of operating fluid capable of heat transfer with the susceptor body, installed in the susceptor body. A susceptor column(35) supports the susceptor body, coupled to the susceptor body. A fluid driving part(80) supplies operating fluid to the fluid conduit.

Abstract translation: 提供CVD以通过相对快速地冷却感受器来缩短维修和预防性维护的待机时间间隔。 工件由安装在反应空间中的基座体（40）支撑。 加热器（50）加热安装在基座体上的工件。 流体导管（60）安装在基座体内，其中，与基座体热传递的工作流体的循环路径安装在基座体内。 感受器柱（35）支撑耦合到基座主体的基座体。 流体驱动部分（80）将工作流体供应到流体导管。

公开(公告)号：KR100654809B1

公开(公告)日：2006-12-08

申请号：KR1020050085640

申请日：2005-09-14

Applicant: 삼성전자주식회사

Inventor： 임경춘 ,  신정근 ,  손진석 ,  김응수 ,  이상호

IPC: G02F1/13

Abstract: A pressing apparatus is provided to improve the speed of processing processed objects and decrease the size of a chamber body to reduce the space and material cost. An apparatus(200) for applying a predetermined pressure to a processed object includes an inlet(211,212), an exit(213,214), a chamber body(210), a loader(220,230), a vertical transfer unit(260), and an unloader(240,250). The inlet and the exit are located at upper and lower portion. The chamber body includes a pressure controller. The loader provides the processed object to the chamber body through the inlet. The vertical transfer unit is located inside the chamber body and transfers the processed object to the exit. The unloader unloads the processed object through the exit.

Abstract translation: 提供了一种压制装置，用于提高处理加工对象的速度并减小腔体的尺寸以减少空间和材料成本。 一种用于向加工物施加预定压力的设备（200）包括入口（211,212），出口（213,214），腔室主体（210），装载器（220,230），竖直传送单元（260）和 卸载器（240,250）。 入口和出口位于上部和下部。 腔室主体包括压力控制器。 装载机通过入口将处理后的物体提供给腔体。 垂直传输单元位于腔体内部并将处理后的物体传输到出口。 卸载程序通过出口卸载已处理的对象。

公开(公告)号：KR100867123B1

公开(公告)日：2008-11-06

申请号：KR1020070033006

申请日：2007-04-03

Applicant: 삼성전자주식회사

Inventor： 성덕용 ,  권태용 ,  한경현 ,  임경춘 ,  정상민

IPC: H01L21/027

CPC classification number: H01L21/31144

Abstract: 본 발명은 반도체소자의 식각방법에 관한 것으로, 특히 본 발명은 플루오르를 함유하지 않은 선구가스를 이용하여 포토레지스트 상에 보호막으로서 탄화수소막을 형성함으로써 점점 얇아지고 있는 포토레지스트에 대해서도 포토레지스트에 대한 높은 선택비를 가지는 식각 공정을 진행할 수 있어 식각 효율을 향상시킨다.
이를 위해 본 발명은 물질막 상에 포토레지스트막이 형성된 반도체 기판을 챔버에 넣고, 챔버에 플루오르를 함유하지 않는 선구가스를 주입하여 상기 포토레지스트막 상에 탄화수소막을 형성하고, 챔버에 식각가스를 주입하여 식각대상물질을 식각하는 것을 특징으로 한다.

公开(公告)号：KR1020080090044A

公开(公告)日：2008-10-08

申请号：KR1020070033006

申请日：2007-04-03

Applicant: 삼성전자주식회사

Inventor： 성덕용 ,  권태용 ,  한경현 ,  임경춘 ,  정상민

IPC: H01L21/027

CPC classification number: H01L21/31144 ,  H01L21/0273 ,  G03F7/11

Abstract: An etching method for a semiconductor device is provided to form a hydrocarbon membrane or a phosphorous-containing hydrocarbon membrane as a protective membrane on a photo-resist membrane by using a precursor gas not including fluorine, thereby performing an etching process with high PR(Photo-Resist) selectivity. An etching method for a semiconductor device comprises the following steps of: inserting a semiconductor substrate where a photo-resist membrane is formed on a material membrane into a chamber; forming a hydrocarbon membrane on the photo-resist membrane by injecting precursor gas not containing fluorine into the chamber; and etching a material to be etched by injecting etching gas into the chamber.

Abstract translation: 提供半导体器件的蚀刻方法，通过使用不含氟的前体气体在光致抗蚀剂膜上形成作为保护膜的烃膜或含磷烃膜，从而进行高PR（Photo -Resist）选择性。 半导体器件的蚀刻方法包括以下步骤：将在其上形成有光致抗蚀剂膜的半导体衬底插入到腔室中; 通过将不含氟的前体气体注入到所述室中在所述光致抗蚀剂膜上形成烃膜; 并通过将蚀刻气体注入到腔室中来蚀刻待蚀刻的材料。

公开(公告)号：KR1020080029497A

公开(公告)日：2008-04-03

申请号：KR1020060095720

申请日：2006-09-29

Applicant: 삼성전자주식회사

Inventor： 이상호 ,  임순규 ,  김상갑 ,  임경춘

IPC: H01L21/3065

CPC classification number: H01J37/32825 ,  H01J37/32844 ,  H01L21/67069 ,  H01L21/67253

Abstract: A plasma processing apparatus and a substrate processing method using the same are provided to reduce a maintenance cost by recycling a part of a process gas discharged from a process. A gas supply unit(20) supplies process gases to a process chamber(10). A plasma generation unit(30) receives the process gases from the gas supply unit and generates plasma. A gas separation unit(60) separates a particular gas from the process gases discharged from the process chamber after a process is finished. A regeneration gas storage tank(80) stores the gases separated from the gas separation unit. The gas separation unit separates the particular gas by using a liquidus temperature's difference between the process gases. A vaporization unit(70) vaporizes the liquefied gas.

Abstract translation: 提供一种等离子体处理装置和使用该等离子体处理装置的基板处理方法，以通过再循环从工艺排出的一部分处理气体来减少维护成本。 气体供应单元（20）将处理气体提供给处理室（10）。 等离子体产生单元（30）接收来自气体供应单元的处理气体并产生等离子体。 气体分离单元（60）在处理完成之后将特定气体与从处理室排出的处理气体分离。 再生气体储罐（80）存储从气体分离单元分离的气体。 气体分离单元通过使用液相线温度的工艺气体之间的差来分离特定的气体。 蒸发单元（70）使液化气体蒸发。

公开(公告)号：KR100689847B1

公开(公告)日：2007-03-08

申请号：KR1020050064273

申请日：2005-07-15

Applicant: 삼성전자주식회사

Inventor： 김응수 ,  안드레이유스코브 ,  이승무 ,  이수호 ,  임경춘

IPC: H01L21/205

Abstract: 본 발명은, 화학기상증착(VCD)장치에 관한 것으로서, 반응공간을 형성하며 상부개구를 갖는 챔버본체와; 상기 상부개구에 설치되어 공정가스를 분배하며 고주파전극을 형성하는 샤워헤드와; 상기 챔버본체의 벽면과 상기 샤워헤드 사이에 개재되어 상호 절연하는 절연부와, 상기 절연부에서 하향 연장되며 공정가스의 흐름이 분산되도록 방사상으로 다수의 공정가스배출공이 형성된 스커트부를 갖는 절연체를 포함하는 것을 특징으로 한다. 이에 의하여, 부품수를 줄여 간단하며 공정가스의 흐름이 비교적 원활하게 이루어 질 수 있는 화학기상증착장치가 제공된다.

公开(公告)号：KR1020110083832A

公开(公告)日：2011-07-21

申请号：KR1020100003772

申请日：2010-01-15

Applicant: 삼성전자주식회사

Inventor： 이진석 ,  이주현 ,  김수홍 ,  김정욱 ,  신준철 ,  전윤광 ,  임경춘 ,  임용호

IPC: H01L21/205 ,  H01L21/3065

CPC classification number: C23C16/4557 ,  C23C16/45572 ,  H01J37/32532 ,  H01L21/67109

Abstract: PURPOSE: A plasma processing apparatus is provided to constantly maintain the etching and depositing property of a substrate by adopting a heater unit which highly maintains the temperature of a top electrode unit. CONSTITUTION: A plasma processing device includes a top electrode unit(100) and a bottom electrode unit which face each other in a process chamber. The top electrode unit includes a gas spray plate(160) and a heater unit(130). The heater unit heats the top electrode unit. The gas spray plate includes a plurality of through holes for spraying gas. The heater unit is bonded with the gas spray plate with soldering.

Abstract translation: 目的：提供一种等离子体处理装置，通过采用高度保持顶部电极单元的温度的加热器单元来恒定地保持基板的蚀刻和沉积性能。 构成：等离子体处理装置包括在处理室中彼此面对的顶部电极单元（100）和底部电极单元。 顶部电极单元包括气体喷射板（160）和加热器单元（130）。 加热器单元加热顶部电极单元。 气体喷射板包括用于喷射气体的多个通孔。 加热器单元通过焊接与气体喷射板接合。

公开(公告)号：KR100832473B1

公开(公告)日：2008-05-27

申请号：KR1020060108956

申请日：2006-11-06

Applicant: 삼성전자주식회사

Inventor： 이상호 ,  임순규 ,  김상갑 ,  임경춘

IPC: H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/32733 ,  H01J37/32825

Abstract: An air pressure plasma etching apparatus is provided to keep uniformly a gap between a stage and a plasma module by reciprocating the stage to the all directions about the plasma module. A stage transfer unit(20) which is able to reciprocate to the forward and backward directions is installed inside a process chamber(1). A stage(10) which is able to reciprocate to the left and right directions from the stage transfer unit is provided, and processed substrates are placed on the stage. A plasma generating unit(30) is installed above the process chamber. A driving motor(28) is installed at the any one out of stage or the stage transfer unit, and a lack gear(12) is installed at the other one so as to be interconnected with a rotation axis of the driving motor. A guide member(40) is installed between the stage and the stage transfer unit.

Abstract translation: 提供一种空气压力等离子体蚀刻装置，通过使载物台相对于等离子体模块的全部方向往复移动，以使载物台和等离子体模块之间的间隙保持均匀。 能够向前后方向往复运动的台架传送单元（20）安装在处理室（1）的内部。 提供能够从载物台传送单元向左右方向往复运动的载物台（10），并将处理过的基板放置在载物台上。 等离子体生成单元（30）安装在处理室的上方。 驱动马达（28）安装在任何一个级或载物台传送单元中，并且在另一个处安装有无齿轮（12），以便与驱动马达的旋转轴线互连。 引导构件（40）安装在载物台和载物台传送单元之间。

公开(公告)号：KR100820737B1

公开(公告)日：2008-04-11

申请号：KR1020060117701

申请日：2006-11-27

Applicant: 삼성전자주식회사

Inventor： 임경춘 ,  임순규 ,  이상호

IPC: H01L21/3065

CPC classification number: H01L21/67069 ,  H01L21/67276 ,  H01L21/67706

Abstract: A plasma etching apparatus and an etching method thereof are provided to perform an etching process on a substrate even when a broken plasma generating apparatus is repaired by reducing the transfer speed of the substrate. A chamber housing(10) has a chamber in which a substrate is etched by plasma. Plural plasma generating apparatuses(20) generate plasma for etching the substrate placed in the chamber. A substrate transfer apparatus(40) transfers the substrate so that the substrate placed in the chamber is reciprocally moved in the chamber. The substrate transfer apparatus reduces the transfer speed of the substrate in proportion to the number of broken plasma generating apparatuses out of plural plasma generating apparatuses. A detecting unit detects whether or not some plasma generating apparatuses are broken. A control unit receives the detecting signal from the detecting unit to reduce the speed of the substrate transfer apparatus.

Abstract translation: 提供了一种等离子体蚀刻装置及其蚀刻方法，即使通过降低基板的传送速度来修复断裂的等离子体产生装置，也对基板进行蚀刻处理。 腔室（10）具有通过等离子体蚀刻衬底的腔室。 多个等离子体产生装置（20）产生用于蚀刻放置在室中的基板的等离子体。 衬底传送装置（40）传送衬底，使得放置在腔室中的衬底在腔室中往复移动。 基板传送装置与多个等离子体产生装置中的等离子体发生装置的数量成比例地降低了基板的传送速度。 检测单元检测一些等离子体产生装置是否断裂。 控制单元接收来自检测单元的检测信号，以降低基板传送装置的速度。