公开(公告)号：KR100832473B1

公开(公告)日：2008-05-27

申请号：KR1020060108956

申请日：2006-11-06

Applicant: 삼성전자주식회사

Inventor： 이상호 ,  임순규 ,  김상갑 ,  임경춘

IPC: H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/32733 ,  H01J37/32825

Abstract: An air pressure plasma etching apparatus is provided to keep uniformly a gap between a stage and a plasma module by reciprocating the stage to the all directions about the plasma module. A stage transfer unit(20) which is able to reciprocate to the forward and backward directions is installed inside a process chamber(1). A stage(10) which is able to reciprocate to the left and right directions from the stage transfer unit is provided, and processed substrates are placed on the stage. A plasma generating unit(30) is installed above the process chamber. A driving motor(28) is installed at the any one out of stage or the stage transfer unit, and a lack gear(12) is installed at the other one so as to be interconnected with a rotation axis of the driving motor. A guide member(40) is installed between the stage and the stage transfer unit.

Abstract translation: 提供一种空气压力等离子体蚀刻装置，通过使载物台相对于等离子体模块的全部方向往复移动，以使载物台和等离子体模块之间的间隙保持均匀。 能够向前后方向往复运动的台架传送单元（20）安装在处理室（1）的内部。 提供能够从载物台传送单元向左右方向往复运动的载物台（10），并将处理过的基板放置在载物台上。 等离子体生成单元（30）安装在处理室的上方。 驱动马达（28）安装在任何一个级或载物台传送单元中，并且在另一个处安装有无齿轮（12），以便与驱动马达的旋转轴线互连。 引导构件（40）安装在载物台和载物台传送单元之间。

公开(公告)号：KR100820737B1

公开(公告)日：2008-04-11

申请号：KR1020060117701

申请日：2006-11-27

Applicant: 삼성전자주식회사

Inventor： 임경춘 ,  임순규 ,  이상호

IPC: H01L21/3065

CPC classification number: H01L21/67069 ,  H01L21/67276 ,  H01L21/67706

Abstract: A plasma etching apparatus and an etching method thereof are provided to perform an etching process on a substrate even when a broken plasma generating apparatus is repaired by reducing the transfer speed of the substrate. A chamber housing(10) has a chamber in which a substrate is etched by plasma. Plural plasma generating apparatuses(20) generate plasma for etching the substrate placed in the chamber. A substrate transfer apparatus(40) transfers the substrate so that the substrate placed in the chamber is reciprocally moved in the chamber. The substrate transfer apparatus reduces the transfer speed of the substrate in proportion to the number of broken plasma generating apparatuses out of plural plasma generating apparatuses. A detecting unit detects whether or not some plasma generating apparatuses are broken. A control unit receives the detecting signal from the detecting unit to reduce the speed of the substrate transfer apparatus.

Abstract translation: 提供了一种等离子体蚀刻装置及其蚀刻方法，即使通过降低基板的传送速度来修复断裂的等离子体产生装置，也对基板进行蚀刻处理。 腔室（10）具有通过等离子体蚀刻衬底的腔室。 多个等离子体产生装置（20）产生用于蚀刻放置在室中的基板的等离子体。 衬底传送装置（40）传送衬底，使得放置在腔室中的衬底在腔室中往复移动。 基板传送装置与多个等离子体产生装置中的等离子体发生装置的数量成比例地降低了基板的传送速度。 检测单元检测一些等离子体产生装置是否断裂。 控制单元接收来自检测单元的检测信号，以降低基板传送装置的速度。

公开(公告)号：KR100749056B1

公开(公告)日：2007-08-14

申请号：KR1020060048252

申请日：2006-05-29

Applicant: 삼성전자주식회사

Inventor： 임경춘 ,  임순규 ,  김상갑 ,  이상호

IPC: G02F1/13 ,  H01L21/3065

Abstract: An atmospheric pressure plasma equipment is provided to uniformly perform an etching process using plasma by providing a distance maintaining device that maintains a constant distance between a plasma generating device and a substrate. A stage(20) includes a receiving surface on which a substrate(1) for processing is placed. A plasma generating device(30) is installed on the stage so as to be movable in a perpendicular direction to the receiving surface. A distance maintaining device(50) contacts the stage when the surface is processed while the stage is moving, and thus maintains a constant distance between the plasma generating device and the substrate. A guide device(40) is further provided to guide a movement of the plasma generating device.

Abstract translation: 通过提供维持等离子体产生装置和基板之间的恒定距离的距离维持装置，提供大气压等离子体设备以均匀地执行使用等离子体的蚀刻过程。 台（20）包括其上放置用于处理的基板（1）的接收表面。 等离子体产生装置（30）安装在平台上以便可以在垂直于接收表面的方向上移动。 距离保持装置（50）在载物台移动时对表面进行加工时与载物台接触，从而维持等离子体生成装置与基板之间的恒定距离。 还提供引导装置（40）以引导等离子体生成装置的运动。

公开(公告)号：KR1020070010409A

公开(公告)日：2007-01-24

申请号：KR1020050064948

申请日：2005-07-18

Applicant: 삼성전자주식회사

Inventor： 임경춘 ,  임순규 ,  신영식 ,  이호 ,  유광준

IPC: H01L21/205

CPC classification number: C23C16/466 ,  H01L21/68785

Abstract: A CVD is provided to shorten an interval of standby time for repair and preventive maintenance by relatively rapidly cooling a susceptor. A workpiece is supported by a susceptor body(40) installed in a reaction space. A heater(50) heats the workpiece, installed on the susceptor body. A fluid conduit(60) is installed in the susceptor body wherein a circulation path of operating fluid capable of heat transfer with the susceptor body, installed in the susceptor body. A susceptor column(35) supports the susceptor body, coupled to the susceptor body. A fluid driving part(80) supplies operating fluid to the fluid conduit.

Abstract translation: 提供CVD以通过相对快速地冷却感受器来缩短维修和预防性维护的待机时间间隔。 工件由安装在反应空间中的基座体（40）支撑。 加热器（50）加热安装在基座体上的工件。 流体导管（60）安装在基座体内，其中，与基座体热传递的工作流体的循环路径安装在基座体内。 感受器柱（35）支撑耦合到基座主体的基座体。 流体驱动部分（80）将工作流体供应到流体导管。

公开(公告)号：KR1020060107683A

公开(公告)日：2006-10-16

申请号：KR1020050030024

申请日：2005-04-11

Applicant: 삼성전자주식회사

Inventor： 안드레이우샤코프 ,  임순규 ,  박휴림 ,  한재현 ,  박영민

IPC: C23C16/455 ,  C23C16/44

Abstract: 본 발명은 웨이퍼 쪽으로 공급되는 공정가스를 균일하게 분사할 수 있도록 가스분배 면판의 구조를 개선한 화학 기상 증착 장치에 관한 것이다. 이를 위해 본 발명은 공정챔버 내부의 웨이퍼 쪽으로 공정가스를 분배하기 위한 샤워헤드를 포함하는 화학 기상 증착 장치에 있어서, 상기 샤워헤드는 다수의 가스분사유로들이 형성되어 있는 가스분배 면판(faceplate)을 포함하고, 상기 다수의 가스분사유로들 중의 적어도 하나의 유로는 상기 가스분배 면판으로 공정가스를 유입하기 시작하는 제1유로부와, 제1유로부를 통과한 공정가스의 흐름 방향을 바꿀 수 있도록 상기 제1유로부의 방향에 대하여 일정한 각도만큼 경사지게 형성되는 제2유로부를 포함한다. 이 때 공정가스가 제2유로부를 통과하며 보다 넓은 면적에 걸쳐 확산될 수 있도록 제2유로부는 슬롯형태를 가질 수 있다. 이와 같은 구성에 의해 본 발명은 공정효율을 높이기 위해 가스분배 면판과 웨이퍼 간의 거리를 가깝게 하는 경우라도 공정가스를 웨이퍼의 전 표면에 균일하게 증착될 수 있도록 함으로써 양질의 웨이퍼를 제조할 수 있는 효과가 있다.

公开(公告)号：KR100807252B1

公开(公告)日：2008-02-28

申请号：KR1020060108267

申请日：2006-11-03

Applicant: 삼성전자주식회사

Inventor： 임경춘 ,  임순규 ,  이상호

IPC: H01L21/3065

CPC classification number: H01L21/67069 ,  B05B1/005

Abstract: A plasma etching apparatus is provided to prevent a gas from being discharged outwardly from a chamber when a substrate goes in and out. A chamber housing(20) has a chamber(21) in which a substrate is etched, and a gateway(22) connected to the chamber through which the substrate goes in and out. A plasma generating unit generates a plasma gas to etch the substrate in the chamber. An air-curtain unit sprays air to form an air curtain adjacent to the gateway, thereby preventing the gas from being discharged from the chamber. A pair of nozzles(61,62) are installed in which a way that the nozzles face to each other at both sides of the gateway. The nozzle is provided with plural spray holes(61a,62a) arranged along the gateway.

Abstract translation: 提供等离子体蚀刻装置，以防止当基板进出时气体从腔室向外排出。 腔室（20）具有其中蚀刻有基底的腔室（21），以及连接到所述腔室的网关（22），所述基底通过所述腔室进入和移出。 等离子体产生单元产生等离子体气体以蚀刻室中的衬底。 气帘单元喷射空气以形成邻近门关的空气幕，从而防止气体从室排出。 安装一对喷嘴（61,62），其中喷嘴在网关两侧彼此面对。 喷嘴设有沿着通道设置的多个喷孔（61a，62a）。

公开(公告)号：KR100776258B1

公开(公告)日：2007-11-15

申请号：KR1020060087661

申请日：2006-09-11

Applicant: 삼성전자주식회사

Inventor： 임경춘 ,  임순규 ,  이상호

IPC: H05H1/34

CPC classification number: H05H1/46 ,  H01J37/32009 ,  H01J37/32458 ,  H01J37/32532 ,  H01J37/32568

Abstract: A plasma generator is provided to prevent cracks of each electrode due to thermal expansion by thermally expanding upper and lower electrodes without resistance in receiving high voltage, to facilitate disassembling, and to reduce the maintenance and repair time. A plasma generator(300) includes a cover(310) having a gas passage(311) for guiding process gas; upper and lower electrodes(350,360) for generating plasma from the process gas by receiving high voltage; a lower electrode support bracket(320) combined to the lower part of the cover to form a plasma generating chamber(330) containing the upper and lower electrodes; and an electrode support member(340) formed at the plasma generating chamber and combined to the lower electrode support bracket to form a lower electrode support space(343) between the electrode support member and the lower electrode support bracket. The periphery of the lower electrode is joined in the lower electrode support space to expand outward.

Abstract translation: 提供等离子体发生器，以防止由于热电扩张而导致的每个电极的裂纹，而不会在接收到高电压的同时热电扩张上下电极，便于拆卸，并且减少维护和修理时间。 等离子体发生器（300）包括具有用于引导处理气体的气体通道（311）的盖（310） 用于通过接收高电压从处理气体产生等离子体的上下电极（350,360） 下部电极支撑托架（320），其组合到所述盖的下部以形成容纳所述上部和下部电极的等离子体产生室（330）; 以及形成在等离子体发生室处并组合到下电极支撑支架的电极支撑构件（340），以在电极支撑构件和下电极支撑支架之间形成下电极支撑空间（343）。 下电极的周边在下电极支撑空间中接合以向外扩展。

公开(公告)号：KR100686725B1

公开(公告)日：2007-02-26

申请号：KR1020050090334

申请日：2005-09-28

Applicant: 삼성전자주식회사

Inventor： 김응수 ,  임순규 ,  정화준 ,  임경춘 ,  이상호

IPC: H01L21/205

Abstract: A chemical vapor deposition apparatus is provided to maintain the concentricity of a shadow ring constantly by coupling the shadow ring to a gas injection part, thereby preventing deposition of a wafer edge. A chemical vapor deposition apparatus includes a chamber body(100) having a desired reaction chamber, and a gas injection part(200) for spraying a certain deposition gas in the reaction chamber. A support member for supporting an object to be processed is moved between a reaction position where the object is positioned on an upper surface and a waiting position where the object is spaced apart from the gas injection part. A shadow ring(300) is coupled to one side of the gas injection part.

Abstract translation: 提供化学气相沉积设备以通过将遮蔽环耦合到气体注入部分来恒定地保持遮蔽环的同心度，由此防止晶片边缘的沉积。 化学气相沉积设备包括具有期望的反应室的室主体（100）和用于将特定沉积气体喷射到反应室中的气体注入部（200）。 用于支撑待处理物体的支撑构件在物体位于上表面上的反应位置和物体与气体注入部分分开的等待位置之间移动。 遮蔽环（300）联接到气体注入部件的一侧。

公开(公告)号：KR1020070016875A

公开(公告)日：2007-02-08

申请号：KR1020050071940

申请日：2005-08-05

Applicant: 삼성전자주식회사

Inventor： 이수호 ,  안드레이유사코 ,  임순규 ,  민경선 ,  정경석

IPC: G01N21/88

Abstract: 본 발명은, 기판검사장치 및 그의 제어방법에 관한 것으로서, 본 발명에 따른 기판검사장치는, 상기 기판을 검사하는 검사유닛과; 상기 검사유닛의 입구영역에 마련되며, 상기 검사유닛으로 상기 기판을 순차적으로 공급하도록 적어도 하나의 상기 기판을 지지하는 복수의 공급스테이지와, 상기 검사유닛의 입구측에 대응하여 복수의 상기 공급스테이지를 이동시키는 공급구동부를 갖는 공급유닛과; 상기 검사유닛의 출구영역에 마련되며, 상기 검사유닛에서 순차적으로 배출되는 적어도 하나의 상기 기판을 지지하는 복수의 배출스테이지와, 상기 검사유닛의 출구측에 대응하여 복수의 상기 배출스테이지를 이동시키는 배출구동부를 갖는 배출유닛을 포함하는 것을 특징으로 한다. 이에 의하여, 비교적 신속하며 간단하게 기판을 검사할 수 있는 기판검사장치 및 그의 제어방법이 제공된다.

Abstract translation: 基板检查装置及其控制方法技术领域本发明涉及一种基板检查装置及其控制方法，其中，根据本发明的基板检查装置包括：用于检查基板的检查单元; 多个供应台，其设置在所述检查单元的入口区域处并支撑所述基板中的至少一个，以将所述基板顺序地供应到所述检查单元; 供应单元，其具有用于移动所述基板的供应驱动部分; 设置在检查单元的出口区域中的多个排出台，用于支撑从检查单元顺序排出的至少一个基板;以及排出口，用于移动与检查单元的出口侧对应的多个排出台 并且具有上游部分的排气单元。 由此，提供了能够相对快速且简单地检查基板的基板检查设备及其控制方法。

公开(公告)号：KR1020110089926A

公开(公告)日：2011-08-10

申请号：KR1020100009433

申请日：2010-02-02

Applicant: 삼성전자주식회사

Inventor： 이준호 ,  이태원 ,  정명훈 ,  임순규 ,  장원혁 ,  김응수

IPC: H01L21/677 ,  H01L21/68 ,  H01L21/02

CPC classification number: H01L21/67201 ,  H01L21/67742 ,  H01L21/68707 ,  Y10S414/139

Abstract: PURPOSE: A load-lock chamber is provided to include a transport path for a wafer of a load-lock loading part arranged in the inside and optimize arrangements of a transport robot and cassette transport arm, thereby simplifying robot movements for wafer transport and minimize the volume of entire device occupation space. CONSTITUTION: A gateway for input and output of a wafer is formed in housing(110). A load-lock loading part(120) is arranged in the housing and stores a plurality of wafers. A load-lock transport part is arranged in the housing. The wafer loaded in the load-lock loading part is inputted and outputted from a process module by the load-lock transport part. The load-lock transport part takes out the wafer from the process module and stores the wafer to the load-lock transport part.

Abstract translation: 目的：提供一种装载锁定室，以包括布置在内部的装载锁定装载部分的晶片的传送路径，并优化传送机器人和盒式传送臂的布置，从而简化了用于晶片传送的机器人运动，并使 整个设备占用空间的数量。 构成：在壳体（110）中形成用于输入和输出晶片的网关。 负载锁定装载部件（120）布置在壳体中并且存储多个晶片。 外壳中设有装载锁定传送部件。 装载在装载锁定装载部中的晶片由加载锁定传送部从处理模块输入并输出。 加载锁定传送部件从处理模块取出晶片，并将晶片存储到加载锁定传送部件。