公开(公告)号：KR1020100001552A

公开(公告)日：2010-01-06

申请号：KR1020080061496

申请日：2008-06-27

Applicant: 삼성전자주식회사

Inventor： 성덕용 ,  볼리네츠블라디미르 ,  우샤코프안드레이 ,  신철호 ,  주석호 ,  김경선 ,  박민준

IPC: H05H1/24 ,  H05H1/30

CPC classification number: H01J37/32082 ,  H01J37/32128 ,  H01J37/32174 ,  H01J37/32532 ,  H01L21/3065 ,  H05H1/46 ,  H05H2001/4645

Abstract: PURPOSE: An etching apparatus using plasma and a method of etching using the plasma are provided to accelerate a minus charged particle which is projected to a substrate by controlling and synchronizing radio frequencies of an etch apparatus. CONSTITUTION: In a etching apparatus using plasma and a method of etching using the plasma, a process chamber(110) etches a thin film on a substrate on a lower electrode by using plasma which is generated by a bias power and a source power. A bias power unit](112) transfers a radio frequency of the bias power to a pulse type mode. A source power unit(114) transfers the radio frequency of the source power to the pulse-type mode. A synchronizing unit(120) synchronizes a supply time of the pulse-type radio frequencies of the bias power and the source power.

Abstract translation: 目的：提供使用等离子体的蚀刻装置和使用等离子体的蚀刻方法，以通过控制和同步蚀刻装置的射频来加速投射到基板的负电荷粒子。 构成：在使用等离子体的蚀刻装置和使用等离子体的蚀刻方法中，处理室（110）通过使用由偏置功率和源功率产生的等离子体来蚀刻下部电极上的基板上的薄膜。 偏置功率单元]（112）将偏置功率的射频传送到脉冲类型模式。 源功率单元（114）将源功率的射频传送到脉冲型模式。 同步单元（120）使偏置功率的脉冲型射频和源功率的供给时间同步。