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公开(公告)号：KR1020140122134A
公开(公告)日：2014-10-17
申请号：KR1020130038845
申请日：2013-04-09
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: H01L21/18 , H01L29/1606 , H01L29/778 , H01L29/78684 , C01B32/182 , B32B9/007 , H01L41/00
Abstract: 본 개시의 일 측면에 따라, 매우 우수한 전하 이동도 뿐만 아니라 밴드갭을 갖는 그래핀 적층체를 제공한다. 본 개시의 제1 측면에 따른 그래핀 적층체의 일 구현예는, 음전하 대전면 및 양전하 대전면을 갖는 제1 압전재료 층; 상기 제1 압전재료 층의 아래에 위치하는 제1 그래핀 층으로서, 상기 제1 압전재료 층의 양전하 대전면과 접하고 있는 제1 그래핀 층; 상기 제1 그래핀 층의 아래에 위치하는 제2 그래핀 층; 및 상기 제2 그래핀 층의 아래에 위치하며 음전하 대전면 및 양전하 대전면을 갖는 제2 압전재료 층으로서, 상기 제2 압전재료 층의 음전하 대전면이 상기 제2 그래핀 층과 접하고 있는, 제2 압전재료 층;을 포함한다.
Abstract translation: 本发明的一个方面提供了具有优异的电荷迁移率和带隙的石墨烯层压体。 根据本发明的方面的石墨烯层压体的一个实施方案包括具有带负电荷的表面和带正电的表面的第一压电材料层; 第一石墨烯层，其被放置在所述压电材料层的下方并与所述第一压电材料层的带正电的表面接触; 放置在第一石墨烯层之下的第二石墨烯层; 以及第二压电材料层，其设置在所述第二石墨烯层的下方并具有带负电的表面和带正电的表面，其中所述第二压电材料层的带负电的表面与所述第二石墨烯层接触。
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3.发明公开소수성 유기물을 함유하는 도핑 그래핀 구조체, 그의 제조방법 및 이를 구비하는 투명전극, 표시소자와 태양전지 审中-实审包含疏水性有机物的疏水性石墨组合物，其制备方法和透明电极，显示装置和包含电极的太阳能电池
公开(公告)号：KR1020140060376A
公开(公告)日：2014-05-20
申请号：KR1020120117905
申请日：2012-10-23
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: H01L29/1606 , H01G9/20 , H01G9/2022 , H01G9/2077 , H01L21/04 , H01L21/0405 , H01L29/16 , H01L51/0045 , H01L51/442 , H01L51/5203 , Y02E10/50 , Y02E10/542 , Y02E10/549 , C01B32/194 , B41M3/12 , B82B1/008
Abstract: The moisture and temperature stability in the doped graphene is improved by forming a hydrophobic organic layer on the surface of the doped graphene on which dopants are doped. The degradation of the doped graphene can be prevented by the improved stability; thus, a transparent electrode comprising the doped graphene including a hydrophobic organic layer can be useful in a solar cell and a display device.
Abstract translation: 通过在其上掺杂有掺杂剂的掺杂石墨烯的表面上形成疏水性有机层来改善掺杂石墨烯中的水分和温度稳定性。 通过提高稳定性可以防止掺杂石墨烯的降解; 因此，包括疏水性有机层的掺杂石墨烯的透明电极可用于太阳能电池和显示装置。
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公开(公告)号：KR1020130142794A
公开(公告)日：2013-12-30
申请号：KR1020120066320
申请日：2012-06-20
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: G01N21/17 , B82Y30/00 , B82Y40/00 , C01B32/182 , G01B11/24 , Y10T428/31678 , Y10T436/23 , G01N33/00 , C01B32/194 , G01N21/33
Abstract: Disclosed are a method for analyzing graphene and an analysis equipment. The method of the present invention comprises: a step of preparing a supporting part and a first graphene structure including graphene with grain and a grain boundary in at least one side of the supporting part; a step of forming a second graphene structure by oxidation-processing the first graphene structure; and a step of detecting the shape of the graphene. . [Reference numerals] (AA,CC) Start;(BB) Oxidizing step;(S110) Preparing a first graphene structure;(S131) Supplying H_2 O;(S132) Radiating UV;(S133) Removing H_2 O from the surface of the graphene structure;(S150) Detecting the shape of graphene
Abstract translation: 公开了用于分析石墨烯和分析设备的方法。 本发明的方法包括：在支撑部分的至少一侧制备支撑部分和包括具有晶粒和晶界的石墨烯的第一石墨烯结构的步骤; 通过氧化处理所述第一石墨烯结构形成第二石墨烯结构的步骤; 以及检测石墨烯的形状的步骤。 。 （参考号）（AA，CC）开始;（BB）氧化步骤;（S110）准备第一石墨烯结构;（S131）供给H_2O;（S132）辐射UV;（S133）从 石墨烯结构;（S150）检测石墨烯的形状
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公开(公告)号：KR1020130081951A
公开(公告)日：2013-07-18
申请号：KR1020120003080
申请日：2012-01-10
Applicant: 삼성전자주식회사
IPC: G06F3/041
CPC classification number: H03K17/96 , B82Y15/00 , H03K17/962 , G06F3/041 , G06F2203/04103
Abstract: PURPOSE: A touch sensor and a touch panel including the same are provided to allow an empty space of a hexagonal structure in graphene materials to perform a buffer function, thereby implementing an impact resistant touch sensor. CONSTITUTION: A first sensing electrode (SE1) senses a touch operation. A first output line (OL1) transmits electric signals. A first diode device (TD1) includes a first control terminal (CT1) which is connected to the first sensing electrode; a first anode terminal (A1) which is connected to a voltage applying unit; and a first cathode terminal (C1) which is connected to the first output line. When the voltage of the first sensing electrode is increased or decreased by the touch operation, the first diode device is turned on or turned off and the electric signals are generated by the first diode device. [Reference numerals] (AA) -5 V (standby state); (BB) 0 V (touch state)
Abstract translation: 目的：提供触摸传感器和包括该触摸传感器的触摸面板，以允许石墨烯材料中的六边形结构的空白空间执行缓冲功能，从而实现抗冲击触摸传感器。 构成：第一感测电极（SE1）感测触摸操作。 第一输出线（OL1）发送电信号。 第一二极管器件（TD1）包括连接到第一感测电极的第一控制端（CT1） 连接到电压施加单元的第一阳极端子（A1）; 以及连接到第一输出线的第一阴极端子（C1）。 当通过触摸操作使第一感测电极的电压增加或减小时，第一二极管器件导通或截止，并且电信号由第一二极管器件产生。 （标号）（AA）-5V（待机状态）; （BB）0 V（触摸状态）
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Patent Agency Ranking
公开(公告)号：KR1020130078454A
公开(公告)日：2013-07-10
申请号：KR1020110147414
申请日：2011-12-30
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: H01L35/22 , C01B32/184 , H01L35/16 , H01L35/32 , H01L35/34 , Y02P20/133
Abstract: PURPOSE: A heterogeneous laminate including graphene, a thermoelectric material, a thermoelectric module, and a thermoelectric apparatus including the same are provided to increase a seebeck effect by using the temperature difference of a current. CONSTITUTION: A composite lamination includes graphene (1). The composite lamination includes a thermoelectric inorganic material (2). The graphene has two to a hundred layers. The graphene has a lamination structure. The graphene is formed by a physical or a chemical process.
Abstract translation: 目的：提供包括石墨烯，热电材料，热电模块和包括其的热电装置的异质层压板，以通过使用电流的温度差来增加塞贝克效应。 构成：复合层压包括石墨烯（1）。 复合层压包括热电无机材料（2）。 石墨烯有两到一百层。 石墨烯具有层压结构。 石墨烯是通过物理或化学过程形成的。
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公开(公告)号：KR1020110133452A
公开(公告)日：2011-12-12
申请号：KR1020110054152
申请日：2011-06-03
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: C01B31/0484 , B82Y30/00 , B82Y40/00 , C01B32/184 , C01B32/194 , C01B2204/06 , H01L29/66742 , H01L29/78684 , H01L51/0016 , H01M4/1393 , H01M4/8817 , H01M4/8867 , H01M8/0202 , H01M10/052 , Y02P70/56 , Y10T428/24479
Abstract: PURPOSE: A method for manufacturing a graphene nano-ribbon and the graphene nano-ribbon manufactured by the same are provided to cost effectively manufacture the graphene nano-ribbon without a high vacuum machine or an expensive machine. CONSTITUTION: A method for manufacturing a graphene nano-ribbon includes the following: A sheet-shaped graphene is formed on at least one side of a substrate. A plasma mask with nano-patterns is formed on the graphene. The nano-patterns are formed on the graphene by implementing a plasma treating process with respect to the stacked body with the plasma mask. The plasma mask forming process includes an amorphous carbon stacking process and a nano-pattern forming process with respect to amorphous carbon. After the nano-patterns are formed on the graphene, the plasma mask is eliminated.
Abstract translation: 目的：提供一种制造石墨烯纳米带的方法和由其制造的石墨烯纳米带，以便在没有高真空机或昂贵的机器的情况下成本有效地制造石墨烯纳米带。 构成：用于制造石墨烯纳米带的方法包括以下：片状石墨烯形成在基板的至少一侧上。 在石墨烯上形成具有纳米图案的等离子体掩模。 通过使用等离子体掩模实现相对于层叠体的等离子体处理工艺，在石墨烯上形成纳米图案。 等离子体掩模形成工艺包括无定形碳堆叠工艺和相对于无定形碳的纳米图案形成工艺。 在石墨烯上形成纳米图案之后，等离子体掩模被消除。
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公开(公告)号：KR1020110100525A
公开(公告)日：2011-09-14
申请号：KR1020100019569
申请日：2010-03-04
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: F24F11/0008 , F24F6/00 , F24F11/30 , F24F2110/20 , G01N27/12
Abstract: 염화금속이 도포된 탄소나노튜브 트랜지스터를 구비한 습도조절 시스템 및 구동방법이 개시된다. 개시된 염화금속이 도포된 탄소나노튜브 트랜지스터를 구비한 습도조절 시스템은 가습기를 선택적으로 턴온시키는 스위칭부와 상기 스위칭부에 턴온신호를 전송하는 습도 센서를 구비한다.
상기 습도 센서는, 탄소나노튜브의 표면에 염화금속이 도포된 탄소나노튜브 트랜지스터이다.-
公开(公告)号：KR101014007B1
公开(公告)日：2011-02-14
申请号：KR1020090107171
申请日：2009-11-06
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: B82B1/00 , B82B3/00 , B82Y15/00 , H01L29/775
Abstract: 환원제를 이용하여 전자가 주입된 탄소 나노튜브(CNT)를 제조하는 방법과 이러한 방법을 통하여 제조된 탄소 나노튜브 및 그를 포함하는 전기 소자를 개시한다. 환원제를 이용하여 전자가 주입된 탄소 나노튜브는 환원제 처리 조건을 변화시킴으로써 탄소 나노튜브의 도핑 정도와 띠 간격 등의 전자적 특성을 광범위하고 용이하게 조절할 수 있는 특징이 있다.
탈도핑, 탄소 나노튜브, 환원제-
公开(公告)号：KR1020100061088A
公开(公告)日：2010-06-07
申请号：KR1020080119974
申请日：2008-11-28
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: C07D401/04 , C07D213/16
CPC classification number: C07D213/22 , B82Y10/00 , H01B1/24 , H01L51/0049 , Y10S977/742 , Y10S977/745 , Y10S977/746 , Y10S977/788 , Y10S977/795
Abstract: PURPOSE: A carbon nano tube(CNT) n- doping material and a CNT n- doping method using thereof are provided to prevent a dedoping of a CNT during an n- doping process among air and moisture, and to maintain a stable doping state. CONSTITUTION: A CNT n- doping material includes more than two pyridinium derivatives inside the molecular structure. The material also contains a compound in the restored state. The compound is viologen selected from the group consisting of 1,1'dibenzyl-4,4'-bipyridinium dichloride, methyl viologen dichloride hydrate, ethyl viologen diperchlorate, 1,11dioctadecyl-4,4'-bipyridinium dibromide, or di-octyl bis(4-pyridyl)biphenyl viologen. A CNT n- doping method comprises a step of doping a CNT with the CNT n- doping material, and a step of removing a solvent from the CNT n- doping material.
Abstract translation: 目的：提供碳纳米管（CNT）n-掺杂材料和使用其的CNT n-掺杂方法，以防止在空气和水分中的n-掺杂过程中对CNT的去掺杂，并保持稳定的掺杂状态。 构成：CNT n-掺杂材料在分子结构内包含两个以上的吡啶鎓衍生物。 该材料还含有处于恢复状态的化合物。 该化合物是选自二氯化1,1'-二苄基-4,4'-联吡啶鎓二氯化物，甲基紫精二氯化物水合物，乙基紫精二水合物，1,11-十八烷基-4,4'-联吡啶鎓二溴化物或二 - 辛基双 （4-吡啶基）联苯紫精。 CNTn掺杂方法包括用CNT掺杂材料掺杂CNT的步骤，以及从CNT正掺杂材料除去溶剂的步骤。
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