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    비휘발성 반도체 메모리 장치의 제조 방법
    2.
    发明公开
    비휘발성 반도체 메모리 장치의 제조 방법 无效
    制造非易失性半导体存储器件的方法

    公开(公告)号：KR1020090074902A

    公开(公告)日：2009-07-08

    申请号：KR1020080000603

    申请日：2008-01-03

    Applicant: 삼성전자주식회사

    Inventor： 임상욱 ,  이승환 ,  김선정 ,  최훈상 ,  정천형 ,  김영선

    IPC: H01L27/115 ,  H01L21/8247 ,  B82Y10/00

    CPC classification number: H01L27/11521 ,  H01L21/28273 ,  H01L29/517 ,  H01L29/66825

    Abstract: A method of manufacturing a non-volatile semiconductor memory device is provided to solve lifting of a dielectric film and a control gate by removing an impurity from a floating gate efficiently through a thermal process. In a method of manufacturing a non-volatile semiconductor memory device, a turner insulating layer(18) is formed on a substrate(10). A first floating gate film(20) including a poly-silicon is formed on the turner insulating layer, and a second preliminary floating gate film including the first metal is formed on the first floating gate film. The second preliminary floating gate film is thermal-treated and the second floating gate film(22a) is formed. A dielectric layer is formed on the second floating gate film, and the control gate layer is formed on the dielectric layer.

    Abstract translation: 提供一种制造非挥发性半导体存储器件的方法，用于通过热处理有效地从漂浮栅去除杂质来解决电介质膜和控制栅极的提升。 在制造非易失性半导体存储器件的方法中，在衬底（10）上形成转子绝缘层（18）。 在所述转鼓绝缘层上形成包括多晶硅的第一浮栅（20），并且在所述第一浮栅上形成包括所述第一金属的第二初步浮栅。 第二初步浮栅膜进行热处理，形成第二浮栅膜（22a）。 在第二浮栅上形成电介质层，在电介质层上形成控制栅极层。

    플래시 메모리 소자 및 그 제조 방법
    3.
    发明公开
    플래시 메모리 소자 및 그 제조 방법 无效
    闪存存储器件及其制造方法

    公开(公告)号：KR1020090005648A

    公开(公告)日：2009-01-14

    申请号：KR1020070068844

    申请日：2007-07-09

    Applicant: 삼성전자주식회사

    Inventor： 정천형 ,  이승환 ,  구봉진 ,  김선정 ,  최훈상 ,  임상욱 ,  김영선

    IPC: H01L21/8247

    CPC classification number: H01L29/792 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/11521 ,  H01L29/513

    Abstract: The flash memory device and manufacturing method thereof are provided to prevent the electric charge tunneling between the gate electrodes and charge trapping layer and to improve data retention characteristic. The tunnel insulating layer(130) is formed on the substrate(110). The charge trapping layer(140) is formed on the tunnel insulating layer. The lower buffer layer(150) is formed on the charge trapping layer. The blocking film(160) is formed on the lower buffer layer. The first gate electrode(170) is formed on the blocking film. The second gate electrode(180) is formed on the first gate electrode. The lower buffer layer comprises the blocking film having no silicon. The blocking layer includes 3 element lanthanum compound.

    Abstract translation: 提供闪速存储器件及其制造方法，以防止栅电极和电荷捕获层之间的电荷隧穿，并提高数据保持特性。 隧道绝缘层（130）形成在基板（110）上。 电荷俘获层（140）形成在隧道绝缘层上。 下部缓冲层（150）形成在电荷俘获层上。 阻挡膜（160）形成在下缓冲层上。 第一栅电极（170）形成在阻挡膜上。 第二栅电极（180）形成在第一栅电极上。 下缓冲层包括没有硅的阻挡膜。 阻挡层包括3元素镧化合物。

    ＤｙＳｃ０３ 막을 포함하는 반도체 박막의 적층 구조 및 그 형성방법
    5.
    发明公开
    ＤｙＳｃ０３ 막을 포함하는 반도체 박막의 적층 구조 및 그 형성방법 有权
    通过ALD形成DYSCO 3膜的方法，包含DYSCO 3膜的半导体膜片及其形成方法

    公开(公告)号：KR1020090014870A

    公开(公告)日：2009-02-11

    申请号：KR1020070079172

    申请日：2007-08-07

    Applicant: 삼성전자주식회사

    Inventor： 최훈상 ,  이승환 ,  구봉진 ,  김선정 ,  정천형 ,  임상욱 ,  김영선

    IPC: H01L21/20

    CPC classification number: H01L29/513 ,  C23C16/40 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/28194 ,  H01L21/3141 ,  H01L21/31604 ,  H01L29/517 ,  H01L29/78

    Abstract: A method for formation of dysco3 film by ALD, semiconductor film stack containing DysScO3 film and method for formation of the same are provided to transfer and supply easily the source materials of low vapor pressure by transporting the source materials of the liquid state of the room temperature by the vaporizer. The Dy source material and Sc source material are carried in the liquid state to the vaporizer(110) positioned in one end of the chamber(100) through liquid conveying lines(120a,120b). The source materials in the liquid state are vaporized in the vaporizer. The vaporized source materials are successively supplied into the chamber to form the DyScO3 film on the substrate by ALD. The Dy source material inlcudes the Dy(EDMDD)3. The Sc source material includes the Sc(EDMDD)3.

    Abstract translation: 提供了通过ALD形成dysco3膜的方法，含有DysScO 3膜的半导体膜堆及其形成方法，通过输送室温液态的原料轻易地转移和供给低蒸气压源 通过蒸发器。 Dy源材料和Sc源材料通过液体输送管线（120a，120b）以液态运送到位于室（100）一端的蒸发器（110）。 处于液态的源材料在蒸发器中蒸发。 蒸发的源材料依次供应到室中以通过ALD在衬底上形成DyScO 3膜。 Dy源材料包括Dy（EDMDD）3。 Sc源材料包括Sc（EDMDD）3。

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