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公开(公告)号：KR1020130109319A
公开(公告)日：2013-10-08
申请号：KR1020120030950
申请日：2012-03-27
Applicant: 삼성전자주식회사
CPC classification number: H01L33/005 , H01L24/24 , H01L27/156 , H01L33/38 , H01L33/44 , H01L33/62 , H01L2933/0025 , H01L2933/0066
Abstract: PURPOSE: A semiconductor light emitting device, a light emitting module, and a lighting device are provided to improve optical efficiency by minimizing a decrease of an effective luminescence area due to an isolation process. CONSTITUTION: A semiconductor laminate is formed on a substrate (5). The semiconductor laminate is divided into light emitting cells by an isolation area. A line part (56) electrically connects the light emitting cells. The line part includes a sub connection line (56a) directly connected to the light emitting cell, a main connection line connecting a part of the sub connection line and a first and a second bonding pad. The tilt angle of the line part on the lateral surface of the light emitting cell is larger than the tilt angle of another part on the lateral surface of the light emitting cell.
Abstract translation: 目的：提供半导体发光器件，发光模块和照明器件，以通过最小化由隔离过程引起的有效发光面积的减小来提高光学效率。 构成：在基板（5）上形成半导体层叠体。 半导体层叠体通过隔离区域分成发光单元。 线部分（56）电连接发光单元。 线部分包括直接连接到发光单元的子连接线（56a），连接子连接线的一部分的主连接线和第一和第二接合焊盘。 发光单元的侧面上的线部分的倾斜角度大于发光单元的侧表面上的另一部分的倾斜角。
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公开(公告)号：KR1020170083519A
公开(公告)日：2017-07-18
申请号：KR1020170086371
申请日：2017-07-07
Applicant: 삼성전자주식회사
CPC classification number: H01L33/38 , H01L27/153 , H01L33/20 , H01L33/382 , H01L33/42 , H01L33/44 , H01L33/62
Abstract: 본발명은반도체발광소자에관한것으로, 보다상세하게는, 제1 및제2 영역을포함하는제1 도전형반도체층; 상기제2 영역상에배치된활성층; 상기활성층상에배치된제2 도전형반도체층; 상기제1 및제2 도전형반도체층상에각각배치된제1 및제2 전극지; 상기제1 전극지와직접접하여전기적으로연결되며상기제1 전극지상에배치된제1 전극패드; 상기제2 전극지와직접접하여전기적으로연결되며상기제2 전극지상에배치된제2 전극패드; 및상기제1 및제2 도전형반도체층상에형성되는절연부; 를포함하며, 상기제1 및제2 전극지의두께는상기제1 및제2 전극지의상면이상기절연부상에돌출되도록상기절연부의두께보다크며, 상기제1 및제2 전극지의폭은상기제1 및제2 전극패드의폭보다작은것을특징으로하는반도체발광소자를제공한다.
Abstract translation: 本发明包括包含本发明的第一导电型半导体层涉及一种半导体发光器件，更具体地，第一mitje第二区域; 设置在第二区域上的有源层; 设置在有源层上的第二导电半导体层; 第一和第二电极指分别设置在第一和第二导电类型半导体层上; 第一电极焊盘，其直接电连接至第一电极指并设置在第一电极接地上; 第二电极焊盘，其直接电连接到第二电极指并且设置在第二电极接地上; 以及形成在第一和第二导电类型半导体层上的绝缘部分; 包括，将第一mitje第二电极指膜厚比绝缘部的厚度大，以便突出到第一mitje 2名电极指的移相器的绝缘部分的上表面上，所述第一mitje第二电极焊盘的第一mitje第二电极指的宽度 半导体发光器件的宽度小于半导体发光器件的宽度。
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3.发明公开
公开(公告)号：KR1020110082863A
公开(公告)日：2011-07-20
申请号：KR1020100002774
申请日：2010-01-12
Applicant: 삼성전자주식회사
IPC: H01L33/02
Abstract: PURPOSE: A supporting wafer for a semiconductor light emitting device, a manufacturing method thereof, and a method for manufacturing a vertical semiconductor light emitting device are provided to form a metal oxide film on a side of a wafer, thereby protecting the supporting wafer from chemical materials. CONSTITUTION: A supporting wafer(110) is prepared. The supporting wafer is made of an alloy of a semiconductor material and metal. A metal oxide film(112) is formed on a side of the supporting wafer. The metal oxide film is formed by anodizing an alloy ingot of the semiconductor material and metal.
Abstract translation: 目的：提供一种用于半导体发光器件的支撑晶片，其制造方法和用于制造垂直半导体发光器件的方法，以在晶片的侧面上形成金属氧化物膜，从而保护支撑晶片免受化学 材料。 构成：制备支撑晶片（110）。 支撑晶片由半导体材料和金属的合金制成。 金属氧化物膜（112）形成在支撑晶片的一侧。 金属氧化物膜通过阳极氧化半导体材料和金属的合金锭而形成。
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Patent Agency Ranking
公开(公告)号：KR1020110082865A
公开(公告)日：2011-07-20
申请号：KR1020100002776
申请日：2010-01-12
Applicant: 삼성전자주식회사
IPC: H01L33/36
CPC classification number: H01L33/38 , H01L33/20 , H01L2933/0016
Abstract: PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to bend the boundary surface between a second electrode exposure area and a semiconductor laminate, thereby preventing lowering of the leakage feature of a light emitting device. CONSTITUTION: A semiconductor laminate comprises first and the second major surfaces which face each other. The semiconductor laminate includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. A connecting fixture is connected from the second major surface to one side of the first conductive semiconductor layer. A first electrode layer is connected to one side of the first conductive semiconductor layer through the connection fixture. A second electrode layer is formed on the second major surface of the semiconductor laminate.
Abstract translation: 目的：提供半导体发光器件及其制造方法来使第二电极曝光区域和半导体层叠体之间的边界面弯曲，从而防止发光器件的泄漏特征的降低。 构成：半导体层叠体包括彼此面对的第一和第二主表面。 半导体层叠体包括第一导电半导体层，有源层和第二导电半导体层。 连接夹具从第二主表面连接到第一导电半导体层的一侧。 第一电极层通过连接夹具连接到第一导电半导体层的一侧。 第二电极层形成在半导体层叠体的第二主表面上。
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公开(公告)号：KR1020130128841A
公开(公告)日：2013-11-27
申请号：KR1020120052926
申请日：2012-05-18
Applicant: 삼성전자주식회사
CPC classification number: H01L27/156 , H01L25/0753 , H01L33/62 , H01L2224/24 , H01L2224/48091 , H01L2924/00014
Abstract: The semiconductor light emitting device according to the embodiment of the present invention is equipped with the first and the second conductive semiconductor layers. The first insulation layer formed in at least one part of the domain except for the side covering surface is in opposite direction to the first electrode and the second insulation layer which is formed among multiple light emitting cells on the first insulation layer is positioned on the whole. The substrate in order to cover at least one is arranged on whole surface of the multi cells.
Abstract translation: 根据本发明的实施例的半导体发光器件配备有第一和第二导电半导体层。 形成在除侧面覆盖面以外的畴的至少一部分上的第一绝缘层与第一电极相反的方向，并且在第一绝缘层上的多个发光单元之间形成的第二绝缘层位于整体上 。 为了覆盖至少一个的基板被布置在多个单元的整个表面上。
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公开(公告)号：KR1020120045919A
公开(公告)日：2012-05-09
申请号：KR1020100107809
申请日：2010-11-01
Applicant: 삼성전자주식회사
CPC classification number: H01L33/38 , H01L27/153 , H01L33/08 , H01L33/20 , H01L33/387 , H01L33/42 , H01L33/44 , H01L33/62 , H01L33/382
Abstract: PURPOSE: A semiconductor light emitting device is provided to improve current dispersion effects by increasing a distance between first and second electrode pads. CONSTITUTION: A first conductivity type semiconductor layer(110) comprises a first region and a second region. An active layer(120) is arranged on the second region. A second conductivity type semiconductor layer is arranged on the active layer. First and second electrode sheets are respectively arranged on the first and second conductivity type semiconductor layers. A first electrode pad(112) is arranged on the first electrode sheet by being electrically connected to the first electrode sheet. A second electrode pad(132) is arranged on the second electrode sheet by being electrically connected to the second electrode sheet.
Abstract translation: 目的：提供半导体发光器件，以通过增加第一和第二电极焊盘之间的距离来改善电流分散效果。 构成：第一导电类型半导体层（110）包括第一区域和第二区域。 有源层（120）布置在第二区域上。 第二导电型半导体层布置在有源层上。 第一和第二电极片分别布置在第一和第二导电类型半导体层上。 第一电极焊盘（112）通过电连接到第一电极片而布置在第一电极片上。 第二电极焊盘（132）通过电连接到第二电极片而布置在第二电极片上。
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公开(公告)号：KR1020110087796A
公开(公告)日：2011-08-03
申请号：KR1020100007392
申请日：2010-01-27
Applicant: 삼성전자주식회사
CPC classification number: H01L33/62 , H01L33/22 , H01L33/382
Abstract: PURPOSE: A semiconductor light emitting device is provided to improve the light extraction efficiency and to drive in the AC power source by optimizing an electrode arranging structure. CONSTITUTION: A plurality of light emitting structures is arranged on a substrate and comprises a first electrical conduction semiconductor layer(103), an active layer(102), a second electrical conduction semiconductor layer(101), and a first and a second electrical connection parts(104,107) which are respectively connected with the first electrical conduction semiconductor layer and the second electrical conduction semiconductor layer. The plurality of light emitting structures is each other electrically connected in order to be driven with the AC power source applied from outside. The first electrical conduction semiconductor layer, the active layer, the second electrical conduction semiconductor layer are formed on the first electrical connection part. The second electrical connection part penetrates the first electrical connection part and the first electrical conduction semiconductor layer and connects with the second electrical conduction semiconductor layer. The second electrical connection part is electrically separated with the first electrical connection part, the first electrical conduction semiconductor layer, and the active layer.
Abstract translation: 目的：提供一种半导体发光器件，以通过优化电极布置结构来提高光提取效率和驱动AC电源。 构成：多个发光结构被布置在衬底上，并且包括第一导电半导体层（103），有源层（102），第二导电半导体层（101）和第一和第二电连接 分别与第一导电半导体层和第二导电半导体层连接的部分（104,107）。 多个发光结构彼此电连接，以便从外部施加的AC电源驱动。 第一导电半导体层，有源层，第二导电半导体层形成在第一电连接部上。 第二电连接部分穿透第一电连接部分和第一导电半导体层并与第二导电半导体层连接。 第二电连接部分与第一电连接部分，第一导电半导体层和有源层电隔离。
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公开(公告)号：KR1020110086983A
公开(公告)日：2011-08-02
申请号：KR1020100006405
申请日：2010-01-25
Applicant: 삼성전자주식회사
CPC classification number: H01L33/38 , H01L33/0079 , H01L33/22 , H01L33/44 , H01L2933/0016 , H01L2933/0091
Abstract: PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to include a structure in which an uneven structure is properly formed and to alter electrode arrangements by having a sufficient amount of current dispersion, thereby improving outside optical extraction efficiency and enabling an efficient semiconductor light emitting element manufacturing process. CONSTITUTION: A light emitting structure is formed on a conductive substrate and comprises a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. The first conductive contact layer is arranged between the conductive substrate and the first conductive semiconductor layer. A conductive via is extended from the conductive substrate. The conductive via penetrates the first conductive contact layer, the first conductive semiconductor layer, and active layer and connects with the second conductive semiconductor layer. An undoped semiconductor layer is formed on the second conductive semiconductor layer and has an uneven structure which is formed in the upper surface.
Abstract translation: 目的：提供一种半导体发光器件及其制造方法，其包括其中适当地形成不均匀结构的结构，并且通过具有足够的电流分散来改变电极布置，从而提高外部光学提取效率并且能够有效地 半导体发光元件制造工艺。 构成：发光结构形成在导电衬底上，并且包括第一导电半导体层，有源层和第二导电半导体层。 第一导电接触层设置在导电基板和第一导电半导体层之间。 导电通孔从导电衬底延伸。 导电通孔穿透第一导电接触层，第一导电半导体层和有源层并与第二导电半导体层连接。 未掺杂的半导体层形成在第二导电半导体层上，并且具有形成在上表面中的不均匀结构。
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