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公开(公告)号：KR102223038B1
公开(公告)日：2021-03-08
申请号：KR1020140099816A
申请日：2014-08-04
Applicant: 삼성전자주식회사
IPC: H01L33/62
CPC classification number: H01L33/62 , H01L33/382 , H01L33/405 , H01L33/44 , H01L33/502 , H01L33/56
Abstract: 본 발명의 일 실시 형태에 따른 반도체 발광소자는, 제1 도전형 반도체층, 활성층, 제2 도전형 반도체층을 구비하는 발광 구조물; 상기 발광 구조물 상에 구비되며, 상기 제1 도전형 반도체층 및 상기 제2 도전형 반도체층 상에 배치되는 제1 개구부를 구비하는 제1 절연층; 상기 제1 절연층 상에 구비되며, 상기 제1 개구부를 통해 상기 제1 도전형 반도체층 및 상기 제2 도전형 반도체층과 각각 전기적으로 접속되는 배리어 메탈층; 상기 배리어 메탈층 상에 구비되며, 상기 배리어 메탈층을 부분적으로 노출시키는 제2 개구부를 구비하는 제2 절연층; 및 상기 제2 개구부를 통해 부분적으로 노출되는 상기 배리어 메탈층 상에 구비되며, 상기 배리어 메탈층을 통해 상기 제1 도전형 반도체층 및 제2 도전형 반도체층과 각각 전기적으로 접속되는 전극을 포함하고, 상기 전극과 상기 발광 구조물 사이에는 상기 제1 및 제2 절연층 중 적어도 하나 및 상기 배리어 메탈층이 배치된다.
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公开(公告)号：KR1020160054712A
公开(公告)日：2016-05-17
申请号：KR1020140153835
申请日：2014-11-06
Applicant: 삼성전자주식회사
IPC: H01L33/54
Abstract: 본발명의실시형태에따른반도체발광소자는, 기판, 상기기판상에순차적으로적층되는제1 도전형반도체층, 활성층, 및제2 도전형반도체층을포함하며, 제1 영역및 상기제1 영역을둘러싸는제2 영역을갖는발광구조물, 및상기기판의가장자리에인접하도록상기제2 영역에마련되며, 상기기판의가장자리와평행한방향으로연장되는홈구조물을포함한다.
Abstract translation: 根据本发明的实施例，半导体发光器件包括：衬底; 包括连续层叠在所述基板上的第一导电型半导体层，有源层和第二导电型半导体层，并且具有包围所述第一区域的第一区域和第二区域的发光结构; 以及设置在与基板的边缘相邻并且与基板的边缘平行的方向上延伸的第二区域中的凹槽。 本发明的目的是防止在制造半导体发光器件封装时制造反射壁的过程中发生的故障。
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公开(公告)号：KR1020140113151A
公开(公告)日：2014-09-24
申请号：KR1020130028185
申请日：2013-03-15
Applicant: 삼성전자주식회사
CPC classification number: B23K1/0006 , B23K1/0016 , B23K35/0238 , B23K35/0261 , B23K35/0272 , B23K35/262 , B23K35/264 , B23K35/268 , B23K35/282 , B23K35/3013 , B23K35/302 , B23K35/3033 , B23K35/3046 , B23K35/32 , B23K35/322 , B23K2201/40 , B23K2201/42 , H01L24/29 , H01L24/32 , H01L24/83 , H01L33/0079 , H01L2224/29082 , H01L2224/29083 , H01L2224/29084 , H01L2224/29109 , H01L2224/29111 , H01L2224/29113 , H01L2224/29116 , H01L2224/29118 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29157 , H01L2224/29166 , H01L2224/29169 , H01L2224/29171 , H01L2224/29181 , H01L2224/29184 , H01L2224/83193 , H01L2224/83805 , H01L2924/01322 , H01L2924/1033 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
Abstract: The present invention includes a method for forming a metal bonding layer that includes the steps of: forming a first bonding metal layer and a second bonding metal layer on one sides of a first object to be bonded and a second object to be bonded; arranging the second object to be bonded on the first object to be bonded in order for the first bonding metal layer and the second bonding metal layer to be in contact with each other; and forming an eutectic metal bonding layer by reacting the first bonding metal layer and the second bonding metal layer. At least one of the first bonding metal layer and the second bonding metal layer are formed to include a reaction delaying layer, which is made of metal or alloy for delaying the reaction between the first bonding metal layer and the second bonding metal layer.
Abstract translation: 本发明包括一种用于形成金属接合层的方法，包括以下步骤：在待接合的第一物体的一侧上形成第一接合金属层和第二接合金属层，以及第二待接合物体; 为了使第一接合金属层和第二接合金属层彼此接触，将要接合的第二物体布置在待接合的第一物体上; 以及通过使所述第一接合金属层和所述第二接合金属层反应而形成共晶金属接合层。 第一接合金属层和第二接合金属层中的至少一个形成为包括用于延迟第一接合金属层和第二接合金属层之间的反应的金属或合金制成的反应延迟层。
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公开(公告)号：KR1020120045838A
公开(公告)日：2012-05-09
申请号：KR1020100107664
申请日：2010-11-01
Applicant: 삼성전자주식회사
IPC: H01L33/02
Abstract: PURPOSE: A composite substrate and a semiconductor light emitting device manufacturing method using the same are provided to stably grow a nitride semiconductor layer by controlling a thermal expansion coefficient of a first substrate equal to a thermal expansion coefficient of a semiconductor layer. CONSTITUTION: A composite substrate for a semiconductor light emitting device comprises a first substrate(110) and a second substrate(120). The first substrate comprises poly-crystal or amorphous materials. The second substrate formed on the first substrate comprises single crystal materials. A thermal expansion coefficient of the first substrate is controlled to make same as a thermal expansion coefficient of a semiconductor layer.
Abstract translation: 目的：提供一种复合基板和使用其的半导体发光器件制造方法，通过控制与半导体层的热膨胀系数相等的第一基板的热膨胀系数来稳定地生长氮化物半导体层。 构成：用于半导体发光器件的复合衬底包括第一衬底（110）和第二衬底（120）。 第一衬底包括多晶或无定形材料。 形成在第一基板上的第二基板包括单晶材料。 控制第一基板的热膨胀系数使其与半导体层的热膨胀系数相同。
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5.发明公开
公开(公告)号：KR1020110082863A
公开(公告)日：2011-07-20
申请号：KR1020100002774
申请日：2010-01-12
Applicant: 삼성전자주식회사
IPC: H01L33/02
Abstract: PURPOSE: A supporting wafer for a semiconductor light emitting device, a manufacturing method thereof, and a method for manufacturing a vertical semiconductor light emitting device are provided to form a metal oxide film on a side of a wafer, thereby protecting the supporting wafer from chemical materials. CONSTITUTION: A supporting wafer(110) is prepared. The supporting wafer is made of an alloy of a semiconductor material and metal. A metal oxide film(112) is formed on a side of the supporting wafer. The metal oxide film is formed by anodizing an alloy ingot of the semiconductor material and metal.
Abstract translation: 目的：提供一种用于半导体发光器件的支撑晶片，其制造方法和用于制造垂直半导体发光器件的方法，以在晶片的侧面上形成金属氧化物膜，从而保护支撑晶片免受化学 材料。 构成：制备支撑晶片（110）。 支撑晶片由半导体材料和金属的合金制成。 金属氧化物膜（112）形成在支撑晶片的一侧。 金属氧化物膜通过阳极氧化半导体材料和金属的合金锭而形成。
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Patent Agency Ranking
公开(公告)号：KR101562826B1
公开(公告)日：2015-10-26
申请号：KR1020090086873
申请日：2009-09-15
Applicant: 삼성전자주식회사 , 서울대학교산학협력단
CPC classification number: G06F17/30241 , G01C21/32 , G01C21/3611 , G01C21/3679 , G06F17/3087 , G09B29/10
Abstract: 지리정보를필터링하는장치및 방법을제안한다. 제안되는지리정보를필터링하는방법은검색할지도영역을선택받고, 검색대상과검색조건을수신하고, 사다리형인터페이스를출력하고, 상기사다리형인터페이스의높이에대응하는임계값을상기지도영역의위치별로확인하고, 상기지도영역의각 위치에서상기임계값이상혹은상기임계값미만을만족하는상기검색대상을필터링해서필터링된대상을추출하고, 상기필터링된대상을상기지도영역에표시해서출력할수 있다.
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公开(公告)号：KR1020140095794A
公开(公告)日：2014-08-04
申请号：KR1020130008633
申请日：2013-01-25
Applicant: 삼성전자주식회사
CPC classification number: H01L33/0079 , H01L33/0095 , H01L2933/0033
Abstract: According to the present invention, a method for manufacturing a light emitting device package includes the steps of preparing a growth substrate having a plurality of light emitting devices formed on an upper surface thereof; preparing a first package substrate having a bonding pattern which is formed on an upper side thereof and corresponds to some of the light emitting devices; bonding the light emitting devices and the bonding pattern after placing an upper surface of the growth substrate and an upper surface of the first package substrate to face each other; separating the light emitting devices from the growth substrate; and packaging the light emitting devices bonded to the bonding pattern.
Abstract translation: 根据本发明，一种制造发光器件封装的方法包括以下步骤：制备具有形成在其上表面上的多个发光器件的生长衬底; 制备具有形成在其上侧并对应于一些发光器件的接合图案的第一封装衬底; 在将生长衬底的上表面和第一封装衬底的上表面放置在一起之后，将发光器件和接合图案接合; 将发光器件与生长衬底分离; 并且包装结合到接合图案的发光器件。
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8.发明公开반도체 발광소자용 지지 웨이퍼, 그 제조 방법 및 이를 이용한 수직 구조 반도체 발광소자의 제조 방법 无效用于半导体发射二极管的支持波形，其制造方法及其制造使用其的半导体发射二极管的方法
公开(公告)号：KR1020110125353A
公开(公告)日：2011-11-21
申请号：KR1020100044827
申请日：2010-05-13
Applicant: 삼성전자주식회사
IPC: H01L21/687 , H01L21/02
Abstract: PURPOSE: A supporting wafer for a semiconductor light emitting device, a manufacturing method thereof, and the manufacturing method of a vertical structure semiconductor light emitting device using the same are provided to prevent the generation of a defect due to thermal expansion coefficient mismatch in bonding or the heat processing time by controlling a thermal expansion coefficient according to content of Si and metal. CONSTITUTION: A barrier layer(114) is composed of a semiconductor material and metal alloy. At least one side between upper side and lower side of the barrier layer is composed of chemically stable metal. The side(112) of a supporting wafer(110) is surface-treated so that a metallic component does not be exposed. A first conductivity type semiconductor layer, an active layer, and a second electrical conduction semiconductor layer are successively formed in the top of a substrate. The supporting wafer is welded on the second electrical conduction semiconductor layer.
Abstract translation: 目的：提供一种用于半导体发光器件的支撑晶片，其制造方法以及使用该半导体发光器件的垂直结构半导体发光器件的制造方法，以防止由于接合中的热膨胀系数不匹配而导致的缺陷的产生 通过根据Si和金属的含量控制热膨胀系数的热处理时间。 构成：阻挡层（114）由半导体材料和金属合金构成。 阻挡层的上侧和下侧之间的至少一侧由化学稳定的金属构成。 支撑晶片（110）的侧面（112）进行表面处理，使金属部件不被露出。 在衬底的顶部依次形成第一导电型半导体层，有源层和第二导电半导体层。 支撑晶片焊接在第二导电半导体层上。
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公开(公告)号：KR1020110082865A
公开(公告)日：2011-07-20
申请号：KR1020100002776
申请日：2010-01-12
Applicant: 삼성전자주식회사
IPC: H01L33/36
CPC classification number: H01L33/38 , H01L33/20 , H01L2933/0016
Abstract: PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to bend the boundary surface between a second electrode exposure area and a semiconductor laminate, thereby preventing lowering of the leakage feature of a light emitting device. CONSTITUTION: A semiconductor laminate comprises first and the second major surfaces which face each other. The semiconductor laminate includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. A connecting fixture is connected from the second major surface to one side of the first conductive semiconductor layer. A first electrode layer is connected to one side of the first conductive semiconductor layer through the connection fixture. A second electrode layer is formed on the second major surface of the semiconductor laminate.
Abstract translation: 目的：提供半导体发光器件及其制造方法来使第二电极曝光区域和半导体层叠体之间的边界面弯曲，从而防止发光器件的泄漏特征的降低。 构成：半导体层叠体包括彼此面对的第一和第二主表面。 半导体层叠体包括第一导电半导体层，有源层和第二导电半导体层。 连接夹具从第二主表面连接到第一导电半导体层的一侧。 第一电极层通过连接夹具连接到第一导电半导体层的一侧。 第二电极层形成在半导体层叠体的第二主表面上。
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公开(公告)号：KR102255087B1
公开(公告)日：2021-05-24
申请号：KR1020140059887
申请日：2014-05-19
Applicant: 삼성전자주식회사 , 서울대학교산학협력단
IPC: G06F3/048
Abstract: 본개시는객체를디스플레이하는전자장치및 방법에관한것이다. 이러한본 발명은객체를디스플레이하는방법에있어서, 복수의객체를스크린에디스플레이하는동작과, 상기복수의객체를분류하는항목의선택에대응하여상기선택된항목에해당되는복수의객체를결정하는동작과, 상기결정된복수의객체를상기스크린에디스플레이하는동작을포함한다.
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