公开(公告)号：KR100804738B1

公开(公告)日：2008-02-19

申请号：KR1020070004973

申请日：2007-01-16

Applicant: 삼성전자주식회사 ,  재단법인서울대학교산학협력재단

Inventor： 고형수 ,  박병국 ,  홍승범 ,  박철민 ,  최우영 ,  김종필 ,  송재영 ,  김상완

IPC: H01L21/66 ,  H01L21/336 ,  H01L29/78

CPC classification number: H01L29/0847 ,  H01L29/66636 ,  H01L29/66659 ,  H01L29/78 ,  G01R1/067

Abstract: A semiconductor probe using an impact-ionization semiconductor device is provided to remarkably improve the limit of sensitivity of a resistive probe and easily adjust the quantity of charges capable of being detected by a probe by developing a new probe structure for easily adjusting the band energy of a source. One tilted surface of a probe is formed by an anisotropic etch process using a first etch mask pattern formed on a silicon substrate. After impurities are doped into the exposed substrate to form a first semiconductor electrode region(16), the first etch mask pattern is removed. A second etch mask pattern opposite to the direction of the first etch mask pattern is formed on the silicon substrate. Space layers are formed on the sidewalls of the second etch mask pattern. After the exposed silicon substrate is anisotropically etched to form an opposite tilted surface of the probe, the second etch mask pattern is removed. Impurities are doped into the exposed substrate to form a second semiconductor electrode region(18), and the second etch mask pattern is removed. A silicon oxide layer pattern is formed on the resultant structure by a known method. Space layers are formed on both sidewalls of the silicon oxide layer pattern. By using the space layer, a predetermined depth of the silicon substrate is etched by a photolithography process, and the space layer is removed. The first semiconductor electrode region can be a source terminal, and the second semiconductor electrode region can be a drain terminal.

Abstract translation: 提供使用冲击电离半导体器件的半导体探针，以显着提高电阻式探头的灵敏度极限，并且通过开发新的探针结构容易地调节能够由探针检测的电荷量，从而容易地调节带电能 来源。 通过使用形成在硅衬底上的第一蚀刻掩模图案的各向异性蚀刻工艺形成探针的一个倾斜表面。 在将杂质掺杂到暴露的衬底中以形成第一半导体电极区域（16）之后，去除第一蚀刻掩模图案。 在硅衬底上形成与第一蚀刻掩模图案的方向相反的第二蚀刻掩模图案。 空间层形成在第二蚀刻掩模图案的侧壁上。 在暴露的硅衬底被各向异性蚀刻以形成探针的相对的倾斜表面之后，去除第二蚀刻掩模图案。 将杂质掺杂到暴露的衬底中以形成第二半导体电极区域（18），并且去除第二蚀刻掩模图案。 通过已知的方法在所得结构上形成氧化硅层图案。 空间层形成在氧化硅层图案的两个侧壁上。 通过使用空间层，通过光刻工艺蚀刻硅衬底的预定深度，并且去除空间层。 第一半导体电极区域可以是源极端子，第二半导体电极区域可以是漏极端子。

公开(公告)号：KR100842923B1

公开(公告)日：2008-07-03

申请号：KR1020070022550

申请日：2007-03-07

Applicant: 삼성전자주식회사 ,  재단법인서울대학교산학협력재단

Inventor： 고형수 ,  박병국 ,  홍승범 ,  박철민 ,  최우영 ,  김종필 ,  송재영 ,  김상완

IPC: G11B9/14 ,  G11B9/02

CPC classification number: H01L29/7834 ,  B82Y10/00 ,  G11B9/1409 ,  H01L21/28123 ,  H01L29/66636

Abstract: A method of manufacturing an enhancement semiconductor probe and an information storage device using the same are provided to reduce a process variable in device performance and to increase reliability of mass production by anisotropic-wet-etching a silicon substrate using side-walls. A method of manufacturing an enhancement semiconductor probe comprises the steps of: forming a first etching mask pattern(110a) on a silicon substrate(100c) to form a tip part of the probe in a first direction and forming side-wall areas at two sides of the first etching mask pattern; anisotropic-etching the silicon substrate to form two inclined surfaces of the probe; forming source and drain areas(160,170,180,190) on the silicon substrate by injecting dopants, using the side-wall area as masks, and removing the side-wall areas; removing the first etching mask pattern; forming a second etching mask pattern to form a tip part of the probe in a second direction; forming space layers at two sides of the second etching mask pattern; and etching the silicon substrate by photographing and etching processes and removing the space layers.

Abstract translation: 提供一种制造增强半导体探针的方法和使用其的信息存储装置，以减少器件性能中的工艺变量，并且通过使用侧壁对硅衬底进行各向异性湿蚀刻来提高批量生产的可靠性。 一种制造增强型半导体探针的方法包括以下步骤：在硅衬底（100c）上形成第一蚀刻掩模图案（110a），以在第一方向上形成探针的尖端部分，并在两侧形成侧壁区域 的第一蚀刻掩模图案; 各向异性蚀刻硅衬底以形成探针的两个倾斜表面; 通过注入掺杂剂在硅衬底上形成源极和漏极区域（160,170,180,190），使用侧壁区域作为掩模，并去除侧壁区域; 去除第一蚀刻掩模图案; 形成第二蚀刻掩模图案以在第二方向上形成探针的末端部分; 在第二蚀刻掩模图案的两侧形成空间层; 并通过拍摄和蚀刻工艺蚀刻硅衬底并去除空间层。

公开(公告)号：KR1020120122267A

公开(公告)日：2012-11-07

申请号：KR1020110040321

申请日：2011-04-28

Applicant: 삼성전자주식회사

Inventor： 박병권 ,  박주영 ,  김상완 ,  백지선 ,  주영임 ,  나재성

IPC: G06F13/14 ,  G06F13/38 ,  G06F9/06

CPC classification number: G06F9/4405 ,  G06F8/65

Abstract: PURPOSE: An electronic device and a firmware providing method thereof are provided to reduce a storage space of a component by connecting the component with a system bus based on a booting code without receiving firmware from a memory. CONSTITUTION: Components(240-1~240-n) perform functions of an electronic device. A common memory(230) stores firmware for the components. A system bus(210) connects the components with the common memory. When the electronic device is booted, a control unit(220) transmits the firmware corresponding to the components from the common memory to the components. When the electronic device is booted, the components are connected with the system bus by using a booting code. [Reference numerals] (210) System bus; (220) Main control unit; (230) Common memory unit; (240-1) First component; (240-n) n-th component

Abstract translation: 目的：提供一种电子设备及其固件提供方法，以通过基于引导代码连接组件与系统总线而不从存储器接收固件来减少组件的存储空间。 构成：组件（240-1〜240-n）执行电子设备的功能。 公共存储器（230）存储组件的固件。 系统总线（210）将组件与公共存储器连接。 当电子设备被启动时，控制单元（220）将与来自公共存储器的组件相对应的固件发送到组件。 当电子设备启动时，组件通过使用引导代码与系统总线连接。 （附图标记）（210）系统总线; （220）主控单元; （230）公共存储单元; （240-1）第一组分; （240-n）第n分量

公开(公告)号：KR1020110037827A

公开(公告)日：2011-04-13

申请号：KR1020100064925

申请日：2010-07-06

Applicant: 삼성전자주식회사

Inventor： 김상완

IPC: G11B7/005 ,  G11B7/085 ,  G11B7/007

CPC classification number: G11B7/005 ,  G11B7/00736 ,  G11B7/08505

Abstract: PURPOSE: An optical disc apparatus and optical disc read-in method which is applied to the same are provided to perform a read-in process even if a read-in area of an optical disc is damaged. CONSTITUTION: An optical pickup unit(110) reads out data which is recorded in an optical disk(10). In case information, which is recorded in a read-in area, is not able to be read out, the optical pickup unit reads out information which is recorded in a file system area. A control unit(120) performs read-in operation by using a file system.

Abstract translation: 目的：提供一种应用于其的光盘装置和光盘读入方法，以便即使光盘的读入区域被损坏也执行读入处理。 构成：光拾取单元（110）读出记录在光盘（10）中的数据。 在记录在读入区域的信息不能读出的情况下，光学拾取单元读出记录在文件系统区域中的信息。 控制单元（120）通过使用文件系统执行读入操作。