公开(公告)号：KR1020140090333A

公开(公告)日：2014-07-17

申请号：KR1020130001595

申请日：2013-01-07

Applicant: 서울대학교산학협력단 ,  세종대학교산학협력단

Inventor： 윤의준 ,  여환국 ,  주기수 ,  천승현 ,  김용승 ,  정상균

IPC: H01L33/36

CPC classification number: H01L33/0075 ,  H01L33/32 ,  H01L2933/0008

Abstract: The present invention relates to a method for manufacturing a device after a large graphene electrode grown without a catalyst is directly grown on a compound semiconductor layer made of GaN or mixed nitride of Ga and another metal. In the present invention, a graphene grown with PECVD without the catalyst at relatively low temperatures, which is able to be applied to a nitride semiconductor, is formed. According to the present invention, a graphene with a uniform property is easily grown on a large substrate of 2 inches or more as a transfer method is not required, unlike a graphene grown with a catalyst. Also, the performance of the device is easily maximized by applying various pre-processes to a graphene-combined nitride semiconductor substrate, by not distinguishing the substrate.

Abstract translation: 本发明涉及一种在没有催化剂生长的大型石墨烯电极直接生长在由GaN或其它金属的混合氮化物构成的化合物半导体层上的器件制造方法。 在本发明中，形成能够施加到氮化物半导体上的在相对较低温度下没有催化剂的PECVD生长的石墨烯。 根据本发明，与催化剂生长的石墨烯不同，具有均匀性质的石墨烯容易在不需要转印方法的2英寸以上的大基材上生长。 此外，通过将石墨烯组合的氮化物半导体衬底的各种预处理通过不区分衬底来容易地最大化器件的性能。