公开(公告)号：KR100878872B1

公开(公告)日：2009-01-15

申请号：KR1020070089029

申请日：2007-09-03

Applicant: 성균관대학교산학협력단

Inventor： 홍병유 ,  박용섭 ,  최원석 ,  이내응 ,  설영국 ,  노화영

IPC: H01L29/786 ,  B82Y30/00

CPC classification number: H01L51/102 ,  H01L51/0541 ,  Y10S977/742 ,  Y10S977/832 ,  Y10S977/938 ,  H01L51/055

Abstract: An organic thin film transistor, manufacturing method thereof, and organic semiconductor device including the same are provided to improve device property and manufacturing process of thin film transistor by forming gate electrode of thin film transistor using nano crystalline conductive carbon layer. A flexible substrate is prepared. A nano crystalline carbon layer(310) is deposited on the flexible substrate as a gate electrode. An organic insulation layer(320) is formed on the flexible substrate on which the gate electrode is deposited. An organic active layer is activated on the organic insulation layer. Source/drain electrodes are formed on the organic active layer. The nano crystalline carbon layer is deposited using an asymmetry magnetron sputtering method. The organic insulation layer is formed by one among polyvinyl phenol and polyvinyl alcohol.

Abstract translation: 提供有机薄膜晶体管及其制造方法以及包括该有机薄膜晶体管的有机半导体器件，以通过使用纳米结晶导电碳层形成薄膜晶体管的栅电极来改善薄膜晶体管的器件特性和制造工艺。 制备柔性基底。 纳米结晶碳层（310）作为栅电极沉积在柔性基板上。 在其上沉积有栅电极的柔性基板上形成有机绝缘层（320）。 在有机绝缘层上激活有机活性层。 在有机活性层上形成源极/漏极。 使用不对称磁控溅射法沉积纳米晶体碳层。 有机绝缘层由聚乙烯苯酚和聚乙烯醇之一形成。

公开(公告)号：KR100878225B1

公开(公告)日：2009-01-13

申请号：KR1020070078667

申请日：2007-08-06

Applicant: 성균관대학교산학협력단

Inventor： 이내응 ,  노화영 ,  설영국 ,  김선일

IPC: H01L51/30 ,  B82Y30/00

Abstract: An organic semiconductor device comprising organic-inorganic nano-composite dielectric layer is provided to realize excellent flexibility, low leakage current, high dielectric constant by using the organic-inorganic nano complex insulating layer. In an organic semiconductor device, a seed layer(30) is formed at the upper part of the substrate(10). A gate electrode(50) is formed on the seed layer. An organic-inorganic nano complex insulating layer(60) is formed on the substrate in which the gate electrode is formed. An organic semiconductor layer(70) is formed on the dielectric layer, and a source/drain electrode layer(80) is formed. The inorganic oxide dispersion solution is manufactured by mixing the inorganic oxide nano particle with the acid solvent and coupling agent. An organic-inorganic oxides nano composite solution is manufactured by mixing the inorganic oxide dispersion solution with the organic compound insulator. The organic-inorganic oxide cargo nano composite solution is coated on substrate.

Abstract translation: 提供有机无机纳米复合电介质层的有机半导体器件，通过使用有机 - 无机纳米复合绝缘层实现优异的柔性，低漏电流，高介电常数。 在有机半导体装置中，在基板（10）的上部形成种子层（30）。 在种子层上形成栅电极（50）。 在形成有栅电极的基板上形成有机 - 无机纳米复合绝缘层（60）。 在电介质层上形成有机半导体层（70），形成源极/漏极层（80）。 无机氧化物分散液通过将无机氧化物纳米粒子与酸性溶剂和偶联剂混合来制造。 通过将无机氧化物分散液与有机化合物绝缘体混合来制造有机 - 无机氧化物纳米复合物溶液。 将有机 - 无机氧化物载体纳米复合物溶液涂覆在基材上。