公开(公告)号：KR1020110010323A

公开(公告)日：2011-02-01

申请号：KR1020090067826

申请日：2009-07-24

Applicant: 삼성전자주식회사 ,  성균관대학교산학협력단

Inventor： 손경석 ,  권장연 ,  김형섭 ,  이후정 ,  문미란 ,  박경

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/04

Abstract: PURPOSE: A thin film transistor and a manufacturing method thereof are provided to reduce a leakage current by comprising a channel layer of a multi-layered film with different crystal grains. CONSTITUTION: A thin film transistor includes a gate, a gate insulation layer(130), a channel layer(140), a source, and a drain. The channel layer comprises a first oxide semiconductor layer and a second oxide semiconductor layer. The source and drain are contacted with both sides of the channel layer. The crystal grain of a first oxide semiconductor layer is relatively larger than the crystal grain of a second oxide semiconductor layer.

Abstract translation: 目的：提供薄膜晶体管及其制造方法，以通过包括具有不同晶粒的多层膜的沟道层来减少漏电流。 构成：薄膜晶体管包括栅极，栅极绝缘层（130），沟道层（140），源极和漏极。 沟道层包括第一氧化物半导体层和第二氧化物半导体层。 源极和漏极与沟道层的两侧接触。 第一氧化物半导体层的晶粒比第二氧化物半导体层的晶粒相对大。

公开(公告)号：KR101638978B1

公开(公告)日：2016-07-13

申请号：KR1020090067826

申请日：2009-07-24

Applicant: 삼성전자주식회사 ,  성균관대학교산학협력단

Inventor： 손경석 ,  권장연 ,  김형섭 ,  이후정 ,  문미란 ,  박경

IPC: H01L29/786

CPC classification number: H01L29/7869

Abstract: 박막트랜지스터및 그제조방법이개시된다. 개시된박막트랜지스터는게이트; 게이트절연막; 제1산화물반도체층및 제2산화물반도체층을포함하는채널층; 상기채널층의양측에각각접촉형성된소스및 드레인;을포함하며, 상기제1산화물반도체층의결정립크기는상기제2산화물반도체층의결정립크기에비해상대적으로크다.

公开(公告)号：KR1020090076107A

公开(公告)日：2009-07-13

申请号：KR1020080001867

申请日：2008-01-07

Applicant: 성균관대학교산학협력단

Inventor： 정동근 ,  이후정 ,  이성우 ,  문미란 ,  우지형

IPC: H01L29/786 ,  H01L51/46

CPC classification number: Y02E10/549 ,  Y02P70/521 ,  H01L51/0516 ,  H01L51/0529 ,  H01L51/0545

Abstract: An organic thin film transistor manufacturing method and the thin film transistor manufactured by the same method are provided, which improve the interface property of the organic thin film transistor. The gate electrode(2) and gate isolation layer(3) are equipped at the upper part of the substrate(1). The surface processing layer is formed into the PECVD(Plasma-enhanced chemical vapor deposition) method by using the precursor material on the gate isolation layer. The organic semiconductor layer(5) is formed on the surface processing layer(4). The source(6)/drain(7) electrode is formed on the organic semiconductor layer. The precursor within the foam generator is evaporated. The evaporated precursor is flowed in the reactor for the plasma vapor deposition. By using the plasma of the reactor, the thin film polymerized by plasma on the substrate within the reactor is deposited.

Abstract translation: 提供了通过相同方法制造的有机薄膜晶体管制造方法和薄膜晶体管，其改善了有机薄膜晶体管的界面性质。 在基板（1）的上部配备有栅电极（2）和栅极隔离层（3）。 通过在栅极隔离层上使用前体材料，将表面处理层形成为PECVD（等离子体增强化学气相沉积）方法。 有机半导体层（5）形成在表面处理层（4）上。 源极（6）/漏极（7）电极形成在有机半导体层上。 泡沫发生器内的前体蒸发。 蒸发的前体在反应器中流动用于等离子体气相沉积。 通过使用反应器的等离子体，沉积在反应器内的基板上由等离子体聚合的薄膜。