公开(公告)号：KR101426646B1

公开(公告)日：2014-08-06

申请号：KR1020130021646

申请日：2013-02-28

Applicant: 충남대학교산학협력단

Inventor： 이가원 ,  이상율 ,  정광석 ,  김유미 ,  남동현

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/66742 ,  H01L21/324 ,  H01L29/7869

Abstract: The present invention relates to a manufacturing method of a thin film transistor and, more specifically, to a manufacturing method of a thin film transistor using a self-aligned channel forming method, an in-plane gate forming method, a body metal contact forming technique, and an interlayer forming technique controlling a semiconductor/metal junction.

Abstract translation: 本发明涉及薄膜晶体管的制造方法，更具体地说，涉及使用自对准沟道形成方法的薄膜晶体管的制造方法，面内栅极形成方法，体金属接触形成技术 以及控制半导体/金属结的中间层形成技术。