公开(公告)号：KR101426646B1

公开(公告)日：2014-08-06

申请号：KR1020130021646

申请日：2013-02-28

Applicant: 충남대학교산학협력단

Inventor： 이가원 ,  이상율 ,  정광석 ,  김유미 ,  남동현

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/66742 ,  H01L21/324 ,  H01L29/7869

Abstract: The present invention relates to a manufacturing method of a thin film transistor and, more specifically, to a manufacturing method of a thin film transistor using a self-aligned channel forming method, an in-plane gate forming method, a body metal contact forming technique, and an interlayer forming technique controlling a semiconductor/metal junction.

Abstract translation: 本发明涉及薄膜晶体管的制造方法，更具体地说，涉及使用自对准沟道形成方法的薄膜晶体管的制造方法，面内栅极形成方法，体金属接触形成技术 以及控制半导体/金属结的中间层形成技术。

公开(公告)号：KR101344230B1

公开(公告)日：2013-12-24

申请号：KR1020130044458

申请日：2013-04-22

Applicant: 충남대학교산학협력단

Inventor： 이가원 ,  이상율 ,  윤호진 ,  양승동 ,  이희덕

IPC: H01L31/072 ,  H01L31/042 ,  H01L31/18

CPC classification number: Y02E10/50 ,  H01L31/072 ,  H01L31/042 ,  H01L31/18

Abstract: The present invention relates to a method for manufacturing a heterojunction solar cell, which includes the steps of: providing an N-type silicon substrate; manufacturing a P-type zinc oxide layer on the upper side of the N-type silicon substrate with an in-situ P-type doping method to inject a V group dopant to the zinc oxide layer formed on the N-type silicon substrate while performing a thermal process after the zinc oxide layer is deposited on the upper side of the N-type silicon substrate; and forming a PN junction between the N-type silicon substrate and the P-type zinc oxide layer. [Reference numerals] (1) N-type silicon substrate;(2) P-type zinc oxide layer;(3) Insulator film

Abstract translation: 本发明涉及一种用于制造异质结太阳能电池的方法，其包括以下步骤：提供N型硅衬底; 通过原位P型掺杂法在N型硅衬底的上侧制造P型氧化锌层，以将V族掺杂剂注入到形成在N型硅衬底上的氧化锌层上，同时执行 在氧化锌层沉积在N型硅衬底的上侧之后的热处理; 并在N型硅衬底和P型氧化锌层之间形成PN结。 [附图标记]（1）N型硅衬底;（2）P型氧化锌层;（3）绝缘膜