公开(公告)号：KR100848813B1

公开(公告)日：2008-07-28

申请号：KR1020070041249

申请日：2007-04-27

Applicant: 포항공과대학교 산학협력단

Inventor： 김형준 ,  신영한 ,  우윤성 ,  이한보람 ,  이성균 ,  손종역

IPC: H01L41/107 ,  H01L29/72 ,  B82Y15/00

CPC classification number: G11C13/025 ,  H01L41/107 ,  Y10S977/742

Abstract: A transistor using deformation caused by piezoelectric effect of a carbon nano tube is provided to obtain a transistor of a new concept using deformation of a carbon nano tube caused by deformation of a piezoelectric device by using a device of a several nano meter using a carbon nano tube. A piezoelectric device(6) is disposed at one side of a carbon nano tube(5) so that the carbon nano tube is deformed by contraction or expansion of the piezoelectric device. A switching process is performed by a difference of specific resistance of the carbon nano tube generated by a deformation quantity of the carbon nano tube caused by the contraction or expansion of the piezoelectric device. The piezoelectric device can be a shape memory piezoelectric actuator.

Abstract translation: 提供使用由碳纳米管的压电效应引起的变形的晶体管，以通过使用使用碳纳米管的几纳米器件来获得使用由压电器件的变形引起的碳纳米管的变形的新概念的晶体管 管。 压电装置（6）设置在碳纳米管（5）的一侧，使得碳纳米管通过压电装置的收缩或膨胀而变形。 通过由压电装置的收缩或膨胀引起的碳纳米管的变形量产生的碳纳米管的电阻差的差异进行切换处理。 压电器件可以是形状记忆压电致动器。