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Patent Agency Ranking
公开(公告)号：KR101240276B1
公开(公告)日：2013-03-07
申请号：KR1020110007470
申请日：2011-01-25
Applicant: 한국과학기술연구원
CPC classification number: H01L51/0045 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/192 , H01L51/44 , H01L51/442 , H01L51/5088 , H01L51/5092 , H01L51/5206 , Y02E10/549 , Y02P70/521
Abstract: 본 발명은 산화 그래핀의 환원처리를 통한 그래핀 박막 및 이를 이용한 광전소자의 제조방법에 관한 것으로서, 본 발명의 그래핀 박막의 제조방법은 (a) 산화 그래핀을 준비하는 단계, (b) 상기 산화 그래핀을 설포닐 히드라지드 계열 환원제로 환원시켜 그래핀을 제조하는 단계, (c) 상기 그래핀을 유기용매에 분산시켜 그래핀 분산액을 제조하는 단계 및 (d) 상기 그래핀 분산액을 이용하여 그래핀 박막을 제조하는 단계를 포함하는 것이고, 상기 설포닐 히드라지드 계열 환원제는 명세서의 화학식 1의 설포닐 히드라지드 치환기를 갖는 화합물인 것일 수 있고, A가 명세서의 화학식 2 중 어느 하나인 것일 수 있다.
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公开(公告)号：KR1019940006131B1
公开(公告)日：1994-07-06
申请号：KR1019910024720
申请日：1991-12-27
Applicant: 한국과학기술연구원
Abstract: The method provides an optical information storage media with reversible information saving function so that we can write, store, erase and rewrite information on the media. The method comprises the steps of: (A) making a thin film by dissolving the liquid crystalline polymer into an organic solvent; (B) heating the solvent to the melting temperature of the crystalline polymer, cooling the solvent below the glass transition temperature, and use the fixed thin film as storage layer; (C) melting the liquid crystalline polymer by irradiation of polarized ultraviolet through a photo mask; (D) storing the information by cooling the polymer.
Abstract translation: 该方法提供具有可逆信息保存功能的光学信息存储介质，从而可以在介质上写入，存储，擦除和重写信息。 该方法包括以下步骤：（A）通过将液晶聚合物溶解在有机溶剂中制备薄膜; （B）将溶剂加热至结晶聚合物的熔融温度，将溶剂冷却至低于玻璃化转变温度，并使用固定薄膜作为储存层; （C）通过光掩模照射偏振紫外线来熔化液晶聚合物; （D）通过冷却聚合物来存储信息。
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公开(公告)号：KR1020120086177A
公开(公告)日：2012-08-02
申请号：KR1020110007470
申请日：2011-01-25
Applicant: 한국과학기술연구원
CPC classification number: H01L51/0045 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/192 , H01L51/44 , H01L51/442 , H01L51/5088 , H01L51/5092 , H01L51/5206 , Y02E10/549 , Y02P70/521
Abstract: PURPOSE: A graphene thin film based on a sulfonyl hydrazide-based reducing agent and a method for manufacturing a photoelectric device using the same are provided to adjust the thickness of a reduced graphene thin film. CONSTITUTION: A graphene thin film based on a sulfonyl hydrazide-based reducing agent includes the following: oxidation graphene is prepared; the oxidation graphene is reduced based on a sulfonyl hydrazide-based reducing agent to manufacture graphene; the graphene is dispersed in an organic solvent to manufacture a graphene dispersed solution; and a graphene thin film is manufactured based on the graphene dispersed solution. The sulfonyl hydrazide-based reducing agent includes a sulfonyl hydrazide substituted group represented by chemical formula 1.
Abstract translation: 目的：提供一种基于磺酰肼类还原剂的石墨烯薄膜及其制造方法，以调整还原型石墨烯薄膜的厚度。 构成：基于磺酰肼类还原剂的石墨烯薄膜包括：制备氧化石墨烯; 基于磺酰肼类还原剂还原氧化石墨烯以制造石墨烯; 石墨烯分散在有机溶剂中以制造石墨烯分散溶液; 并且基于石墨烯分散溶液制造石墨烯薄膜。 磺酰肼类还原剂包括由化学式1表示的磺酰肼取代基。
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