Abstract:
결정화유리기지에세라믹분말충전재를첨가하여밀봉성을향상시킨고체산화물셀용밀봉재및 이를포함하는고체산화물셀을제공한다. 고체산화물셀용밀봉재는 70부피% 내지 90부피%의결정화유리상기지, 및 10부피% 내지 30부피%의산화물충전재를포함한다. 결정화유리상기지는 20mol% 내지 40mol%의 SrO과 5mol% 내지 20mol%의 CaO, 5mol% 내지 15mol%의 BO, 1mol% 내지 5mol%의 ZrO및나머지 SiO를포함한다.
Abstract:
Disclosed is a method of forming a quantum dots array. In the method of the present invention, a structure of wire-like quantum dots with good quality is formed in materials having an inconsistency in the lattice constant on a tilted substrate by using the binding property of atomic bonding due to chemical bonding steps of the tilted substrate, and the spacing of the wire-like quantum dots is varied by using the step width of the tilted substrate which is transformed due to a partial pressure of a source gas and the thickness of a buffer layer. The invention allows materials having an inconsistency in the lattice constant to be freely formed in the form of quantum wires with a growing technique only and accordingly to be used as base materials in use for manufacture of novel concept of optoelectronic devices which have not been obtained so far.
Abstract:
PURPOSE: A method for forming a quantum point array using an inclined substrate is provided to arrange materials of which grating constants are largely inconsistent to each other in quantum points as quantum wire of high quality. CONSTITUTION: A substrate which has a constant determined axis and is inclined to the constant determined axis is prepared. A buffer layer of the same quality as the substrate is formed on an upper portion of the substrate by using a chemical vapor deposition method. A material which is largely inconsistent with the substrate in a grating constant grows on the substrate. A quantum wire of high quality is formed by controlling a partial pressure of a source gas and thickness of the buffer layer, and thickness of the material layer in the chemical deposition process of the buffer layer.
Abstract:
결정화유리기지에세라믹분말충전재를첨가하여밀봉성을향상시킨고체산화물셀용밀봉재및 이를포함하는고체산화물셀을제공한다. 고체산화물셀용밀봉재는 70부피% 내지 90부피%의결정화유리상기지, 및 10부피% 내지 30부피%의산화물충전재를포함한다. 결정화유리상기지는 20mol% 내지 40mol%의 SrO과 5mol% 내지 20mol%의 CaO, 5mol% 내지 15mol%의 BO, 1mol% 내지 5mol%의 ZrO및나머지 SiO를포함한다.
Abstract:
PURPOSE: An InGaAs(indium gallium arsenide) nanowire is provided to have excellent optical/electrical property without misfit dislocation by growing with volmer-weber method on silicon board patterned by a large area nano imprint method. CONSTITUTION: A manufacturing method of an InGaAs nanowire comprises the following steps. SiO2 is deposited on silicon substrate(111). On SiO2 layer, the nano hole pattern is formed. InxGa1-xAs nano array is perpendicularly grown along the form of nano hole pattern. The SiO2 layer is 10-300nm thickened by plasma enhanced chemical vapor deposition(PECVD). The nano hole pattern is formed by the nano imprint lithography method. The nano hole comprises the diameter of 50-500nm and the distance between the holes is 400-1000nm. The InxGa1-xAs nano wire is grown by the metal-organic chemical vapor deposition(MOCVD) on the patterned silicon substrate. [Reference numerals] (111) Silicon substrate
Abstract translation:目的:通过在大面积纳米压印方法图案化的硅板上采用伏安法进行生长,提供InGaAs(砷化铟镓)纳米线,具有优异的光学/电学性能,无误差位错。 构成:InGaAs纳米线的制造方法包括以下步骤。 SiO 2沉积在硅衬底(111)上。 在SiO2层上形成纳米孔图案。 In x Ga 1-x As纳米阵列沿着纳米孔图案的形式垂直生长。 通过等离子体增强化学气相沉积(PECVD),SiO 2层增厚10-300nm。 纳米孔图案通过纳米压印光刻法形成。 纳米孔的直径为50-500nm,孔间距为400-1000nm。 InxGa1-xAs纳米线通过金属 - 有机化学气相沉积(MOCVD)在图案化的硅衬底上生长。 (111)硅基板