公开(公告)号：KR100445105B1

公开(公告)日：2004-08-21

申请号：KR1020010066053

申请日：2001-10-25

Applicant: 한국과학기술연구원 ,  주식회사 다산 씨.앤드.아이

Inventor： 최원국 ,  정형진 ,  송재훈 ,  오희범 ,  윤덕주

IPC: C23C14/46

CPC classification number: H01J37/317 ,  H01J2237/0812 ,  H01J2237/316

Abstract: A surface smoothing device and method thereof which flattens a surface of a sample by irradiating ionized gas of cluster state comprises: an operating gas supplying device for supplying operating gas; a diffusion chamber connected to a convergent and divergent nozzle which changes the operating gas supplied from the operating gas supplying device into cluster state; a source chamber including a skimmer connected to the diffusion chamber for extracting a part of the operating gas in cluster state, and an ionizing device for ionizing the operating gas of cluster state selected by the skimmer; an acceleration chamber including a lens for increasing a density of the cluster ion beam current, and an accelerating device for accelerating the cluster ion; and a process chamber in which the accelerated cluster ion is irradiated on a sample of ITO thin film to flatten the surface of the sample.

Abstract translation: 一种表面平滑装置及其方法，其通过照射簇状态的离子化气体来使试样表面平坦化，所述表面平滑装置及其方法包括：用于供应工作气体的工作气体供应装置; 扩散室，其连接到将从工作气体供给装置供给的工作气体变为团簇状态的会聚和发散喷嘴; 源腔室，其包括连接到扩散腔室以用于提取处于集群状态的部分工作气体的撇渣器和用于电离由撇渣器选择的集群状态的工作气体的电离装置; 加速室，其包括用于增加所述簇离子束电流的密度的透镜以及用于加速所述簇离子的加速装置; 以及处理室，其中加速的簇离子照射在ITO薄膜的样本上以使样本的表面平坦化。

公开(公告)号：KR100402200B1

公开(公告)日：2003-10-17

申请号：KR1020010003412

申请日：2001-01-20

Applicant: 한국과학기술연구원

Inventor： 최원국 ,  정형진 ,  송종한 ,  송재훈 ,  권순남 ,  황정남

IPC: H01J37/30

Abstract: PURPOSE: A gas cluster ion accelerator is provided to generate gas cluster by using adiabatic expansion and readily adjust acceleration energy of gas cluster. CONSTITUTION: A gas cluster ion accelerator comprises a cluster generating unit, an ionizing unit(32), a lens unit(52), a cluster measuring unit(36), an accelerating unit(54) and scanning units(56,58). The cluster generating unit jets gas from high pressure to low pressure under adiabatic expansion condition to convert the gas to cluster state. The ionizing unit(32) ionizes the cluster from the cluster generating unit. The lens part(52) adjusts focus of the ionized cluster from the ionizing unit(32). The cluster measuring unit(36) measures size of the ionized cluster from the lens part(52). The accelerating unit accelerates the ionized cluster. The scanning units(56,58) scan the accelerated ionized cluster from the accelerating unit(54) onto a target(75).

Abstract translation: 用途：提供气体团簇离子加速器，利用绝热膨胀产生气体团簇，随时调整气体团簇的加速能量。 本发明公开了一种气体团簇离子加速器，包括团簇生成单元，电离单元32，透镜单元52，簇测量单元36，加速单元54和扫描单元56,58。 气体发生单元在绝热膨胀条件下将气体从高压喷射到低压，以将气体转化为团簇状态。 电离单元（32）使簇生成单元的簇离子化。 透镜部分（52）调整来自电离单元（32）的电离簇的焦点。 簇测量单元（36）测量来自透镜部分（52）的电离簇的尺寸。 加速单元加速电离簇。 扫描单元（56,58）将加速离子化簇从加速单元（54）扫描到目标（75）上。

公开(公告)号：KR1020030033879A

公开(公告)日：2003-05-01

申请号：KR1020010066053

申请日：2001-10-25

Applicant: 한국과학기술연구원 ,  주식회사 다산 씨.앤드.아이

Inventor： 최원국 ,  정형진 ,  송재훈 ,  오희범 ,  윤덕주

IPC: C23C14/46

CPC classification number: H01J37/317 ,  H01J2237/0812 ,  H01J2237/316

Abstract: PURPOSE: A system and a method for treating surface of ITO thin film using gas cluster ion beam are provided to flatten the surface of the sample by changing operating gas into the cluster state and ionizing and accelerating gas of the cluster state, thereby irradiating the ionized and accelerated gas onto the surface of an ITO thin film sample. CONSTITUTION: The system comprises an operating gas supply unit(10) for supplying operating gas(1); a diffusion chamber(20) connected to a convergent and divergent nozzle(21) for changing operating gas supplied from the operating gas supply unit into the cluster state; a source chamber(30) comprising a skimmer(22) connected to the diffusion chamber to extract a portion of the operating gas in the cluster state, and an ionization unit(31) for ionizing the operating gas in the cluster state that is sorted by the skimmer; an acceleration chamber(40) comprising a lens(41) for increasing density of the cluster ions, and an accelerator(42) for accelerating the cluster ions; and a process chamber(50) for flattening the surface of the sample by irradiating the accelerated cluster ions onto an ITO thin film sample, wherein the system further comprises a scanner(51) installed between the acceleration chamber and process chamber to control position where the operating gas in the accelerated cluster state is ejected, and wherein the process chamber further comprises a Faraday(53) for measuring current density of the ejected operating gas.

Abstract translation: 目的：提供一种使用气体簇离子束处理ITO薄膜表面的系统和方法，通过将工作气体改变为聚集状态来使样品的表面平坦化，并使簇状态的气体离子化和加速，从而照射离子化的 并将气体加速到ITO薄膜样品的表面上。 构成：该系统包括用于供应工作气体（1）的操作气体供应单元（10）; 连接到会聚和扩散喷嘴（21）的扩散室（20），用于将从操作气体供应单元供应的工作气体改变为集束状态; 源室（30），包括连接到扩散室的分离器（22），以提取处于集束状态的工作气体的一部分;以及电离单元（31），用于使分散在所述聚集状态的工作气体离子化， 撇渣器 加速室（40），其包括用于增加所述簇离子的密度的透镜（41）和用于加速所述簇离子的加速器（42）; 以及处理室（50），用于通过将加速的簇离子照射到ITO薄膜样品上来使样品的表面平坦化，其中该系统还包括安装在加速室和处理室之间的扫描仪（51），以控制位置 喷射处于加速聚集状态的工作气体，并且其中处理室还包括用于测量喷出的操作气体的电流密度的法拉第（53）。

公开(公告)号：KR1020020062420A

公开(公告)日：2002-07-26

申请号：KR1020010003412

申请日：2001-01-20

Applicant: 한국과학기술연구원

Inventor： 최원국 ,  정형진 ,  송종한 ,  송재훈 ,  권순남 ,  황정남

IPC: H01J37/30

CPC classification number: H01J37/317 ,  H01J37/34 ,  H01J2237/31701

Abstract: PURPOSE: A gas cluster ion accelerator is provided to generate gas cluster by using adiabatic expansion and readily adjust acceleration energy of gas cluster. CONSTITUTION: A gas cluster ion accelerator comprises a cluster generating unit, an ionizing unit(32), a lens unit(52), a cluster measuring unit(36), an accelerating unit(54) and scanning units(56,58). The cluster generating unit jets gas from high pressure to low pressure under adiabatic expansion condition to convert the gas to cluster state. The ionizing unit(32) ionizes the cluster from the cluster generating unit. The lens part(52) adjusts focus of the ionized cluster from the ionizing unit(32). The cluster measuring unit(36) measures size of the ionized cluster from the lens part(52). The accelerating unit accelerates the ionized cluster. The scanning units(56,58) scan the accelerated ionized cluster from the accelerating unit(54) onto a target(75).

Abstract translation: 目的：提供气体聚集离子加速器，通过绝热膨胀产生气体簇，容易调节气体团簇的加速能。 构成：气体簇离子加速器包括簇生成单元，离子化单元（32），透镜单元（52），簇测量单元（36），加速单元（54）和扫描单元（56,58）。 集群发电机组在绝热膨胀条件下将气体从高压到低压喷射，将气体转化为集束状态。 离子化单元（32）使簇从簇生成单元离子化。 透镜部分（52）从电离单元（32）调节离子簇的聚焦。 簇测量单元（36）测量来自透镜部分（52）的电离簇的尺寸。 加速单元加速电离簇。 扫描单元（56,58）将加速的离子簇从加速单元（54）扫描到目标（75）上。

公开(公告)号：KR1020010076662A

公开(公告)日：2001-08-16

申请号：KR1020000003940

申请日：2000-01-27

Applicant: 한국과학기술연구원

Inventor： 최원국 ,  정형진 ,  오영제 ,  윤영수 ,  송재훈

IPC: H01C7/10

CPC classification number: H01C17/12 ,  G01K7/183 ,  H01J37/32082 ,  H01J37/3408

Abstract: PURPOSE: A cryogenic resistance thermometer thin film and a manufacturing method thereof are provided to simplify a manufacturing process and prevent air pollution. CONSTITUTION: A thin film is a (one of La, Nd and Pr)-(one of Ca, Sr, Ba and Pb)-Mn-O having colossal magnetoresistance. The thin film is expressed by a linear equation in which a natural value to resistance value is within a predetermined error range to an absolute temperature in a low temperature area. The thin film may be La-Ca-Mn-O. The low temperature is 77K to 230K. The thin film may be La-Sr-Mn-O and the low temperature area is less than 300K. The error range is within 0.5. The thin film is formed on a substrate selected from the group consisting of a LaAlO3(001) substrate, MgO, Al2O3, SrTiO3 and Si containing substrate. The thin film is 30nm to 1000nm in thickness. The thin film of (one of La, Nd and Pr)-(one of Ca, Sr, Ba and Pb)-Mn-O having colossal magnetoresistance is deposited on the substrate by an RF magnetron sputtering method and thermally treated at a temperature ranging from 600 to 1000°C for 0.5 to 24 hours.

Abstract translation: 目的：提供一种低温电阻温度计薄膜及其制造方法，以简化制造过程并防止空气污染。 构成：薄膜是具有巨大磁阻的（La，Nd和Pr）之一（Ca，Sr，Ba和Pb中的一种）-Mn-O。 薄膜由线性方程表示，其中电阻值的自然值在低温区域内的绝对温度的预定误差范围内。 该薄膜可以是La-Ca-Mn-O。 低温为77K〜230K。 薄膜可以是La-Sr-Mn-O，低温区域小于300K。 误差范围在0.5以内。 该薄膜形成在选自由LaAlO 3（001）衬底，MgO，Al 2 O 3，SrTiO 3和含Si衬底组成的组中的衬底上。 该薄膜的厚度为30nm至1000nm。 通过RF磁控溅射法将具有巨磁电阻的（La，Nd和Pr中的一种）（Ca，Sr，Ba和Pb中的一种） - Mn-O的薄膜沉积在衬底上，并在温度范围 在600〜1000℃下进行0.5〜24小时。